GIS中的快速暂态过电压及影响因素分析

在本文建议的简化等值回路进行验证的基础上,计算了某一国产GIS中隔离开关操作引起的快速暂态过电压,并对一些影响因素进行了分析讨论。     

Finite element modeling and experimental proof of NEMS-based silicon pillar resonators for nanoparticle mass sensing applications

The potential use of nanoelectromechanical systems (NEMS) created in silicon nanopillars (SiNPLs) is investigated in this work as a new generation of aerosol nanoparticle (NP)-detecting device. The sensor structures are created and simulated using a finite element modeling (FEM) tool of COMSOL Multiphysics 4.3b to study the resonant characteristics and the sensitivity of the SiNPL for femtogram NP mass detection in 3-D structures. The SiNPL arrays use a piezoelectric stack for resonance excitation. To achieve an optimal structure and to investigate the etching effect on the fabricated resonators, SiNPLs with different designs of meshes, sidewall profiles, heights, and diameters are simulated and analyzed. To validate the FEM results, fabricated SiNPLs with a high aspect ratio of approximately 60 are used and characterized in resonant frequency measurements where their results agree well with those simulated by FEM. Furthermore, the deflection of a SiNPL can be enhanced by increasing the applied piezoactuator voltage. By depositing different NPs [i.e., gold (Au), silver (Ag), titanium dioxide (TiO₂), silicon dioxide (SiO₂), and carbon black NPs] on the SiNPLs, the decrease of the resonant frequency is clearly shown confirming their potential to be used as airborne NP mass sensor with femtogram resolution level. A coupling concept of the SiNPL arrays with piezoresistive cantilever resonator in terms of the mass loading effect is also studied concerning the possibility of obtaining electrical readout signal from the resonant sensors.     

双参数获取多功能控制器

双参数获取多功能控制器是一个单宽度NIM插件,与三个ADC,IBM微机及接口连接组成双参数获取多功能微机多道。它的功能分三部分:(1)双参数获取 全谱为256×256,利用开窗技术分区域获取可达512×512,1024×1024。(2)单谱 两个单路可同时获取。(3)谱定标(又称多谱获取)可用范围:单向 1024道×8,0048道×4;双向2×1024道×4,2×512道×8。     

Reduction of variance in spectral estimates for correction of ultrasonic aberration

A variance reduction factor is defined to describe the rate of convergence and accuracy of spectra estimated from overlapping ultrasonic scattering volumes when the scattering is from a spatially uncorrelated medium. Assuming that the individual volumes are localized by a spherically symmetric Gaussian window and that centers of the volumes are located on orbits of an icosahedral rotation group, the factor is minimized by adjusting the weight and radius of each orbit. Conditions necessary for the application of the variance reduction method, particularly for statistical estimation of aberration, are examined. The smallest possible value of the factor is found by allowing an unlimited number of centers constrained only to be within a ball rather than on icosahedral orbits. Computations using orbits formed by icosahedral vertices, face centers, and edge midpoints with a constraint radius limited to a small multiple of the Gaussian width show that a significant reduction of variance can be achieved from a small number of centers in the confined volume and that this reduction is nearly the maximum obtainable from an unlimited number of centers in the same volume.     

Examples of design curves for multirow arrays used with time-shift compensation

The effect of 1.75-D array element height on time-shift compensation is analyzed using a two-dimensional array system and a distributed aberration phantom. The analysis uses hydrophone measurements of transmit beams. The results indicate that, for imaging at 3 MHz through aberration representative of the abdominal wall, similar focus compensation performance can be expected from arrays with element pitches less than or equal to 3.0 mm.     

Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe

The existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is shown experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective bandgap of the structure; they are characterized by a high density and a long lifetime. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.     

High-Temperature Performance of Stacked Silicon Nanowires for Thermoelectric Power Generation

Deep reactive-ion etching at cryogenic temperatures (cryo-DRIE) has been used to produce arrays of silicon nanowires (NWs) for thermoelectric (TE) power generation devices. Using cryo-DRIE, we were able to fabricate NWs of large aspect ratios (up to 32) using a photoresist mask. Roughening of the NW sidewalls occurred, which has been recognized as beneficial for low thermal conductivity. Generated NWs, which were 7 μm in length and 220 nm to 270 nm in diameter, were robust enough to be stacked with a bulk silicon chip as a common top contact to the NWs. Mechanical support of the NW array, which can be created by filling the free space between the NWs using silicon oxide or polyimide, was not required. The Seebeck voltage, measured across multiple stacks of up to 16 bulk silicon dies, revealed negligible thermal interface resistance. With stacked silicon NWs, we observed Seebeck voltages that were an order of magnitude higher than those observed for bulk silicon. Degradation of the TE performance of silicon NWs was not observed for temperatures up to 470°C and temperature gradients up to 170 K.     

Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers

High-quality ZnSe-based heterostructures are grown by uninterrupted molecular beam epitaxy using the concept of strain compensation and alternating-strain multilayers. To verify the advantages of this technique, optically pumped ZnSSe/ZnCdSe laser structures containing short-period superlattices or multiple quantum wells have been grown and studied. A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described. Fiz. Tekh. Poluprovodn. 32, 1272–1276 (October 1998)