N-Type Field-Effect Transistors Using Multiple Mg-Doped ZnO Nanorods

Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO₂ gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10^-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold     

Decreasing miscibility with greater heterogeneity in ternary polymer blend: poly(cyclohexyl methacrylate), poly(α‐methyl styrene) and poly(4‐methyl styrene)

A ternary blend system comprising poly(cyclohexyl methacrylate) (PCHMA), poly(α‐methyl styrene) (PαMS) and poly(4‐methyl styrene) (P4MS) was investigated by thermal analysis, optical and scanning electron microscopy. Ternary phase behaviour was compared with the behaviour for the three constituent binary pairs. This study showed that the ternary blends of PCHMA/PαMS/P4MS in most compositions were miscible, with an apparent glass transition temperature (T_g) and distinct cloud‐point transitions, which were located at lower temperatures than their binary counterparts. However, in a closed‐loop range of compositions roughly near the centre of the triangular phase diagram, some ternary blends displayed phase separation with heterogeneity domains of about 1 µm. Therefore, it is properly concluded that ternary PCHMA/PαMS/P4M is partially miscible with a small closed‐loop immisciblity range, even though all the constituent binary pairs are fully miscible. Thermodynamic backgrounds leading to decreased miscibility and greater heterogeneity in a ternary polymer system in comparison with the binary counterparts are discussed. © 2003 Society of Chemical Industry     

Self-Consistent Effects on the Starting Current of Gyrotron Oscillators

Self-consistent effects on the starting current of gyrotron oscillators are examined. Field profiles in the open cavity are shown to be sensitive to the interaction dynamics. This can either significantly raise or lower the oscillation threshold, particularly for the low-Q modes. The transition from resonant-mode oscillations at the low magnetic field to backward-wave oscillations at the high magnetic field is demonstrated.     

Catalytic dehydrogenation of ethylbenzene with carbon dioxide: promotional effect of antimony in supported vanadium–antimony oxide catalyst

Alumina-supported vanadium oxide, VO_x/Al₂O₃, and binary vanadium–antimony oxides, VSbO_x/Al₂O₃, have been tested in the ethylbenzene dehydrogenation with carbon dioxide and characterized by S_BET, X-ray diffraction, X-ray photoelectron spectroscopy, hydrogen temperature-programmed reduction and CO₂ pulse methods. VSbO_x/Al₂O₃ exhibited enhanced catalytic activity and especially on-stream stability compared to VO_x/Al₂O₃ catalyst. Incorporation of antimony into VO_x/Al₂O₃ increased dispersion of active VO_x species, enhanced redox properties of the systems and formed a new mixed vanadium–antimony oxide phase in the most catalytically efficient V_0.43Sb_0.57O_x/Al₂O₃ system.     

Effect of exponentially graded base doping on the performance ofGaAs/AlGaAs heterojunction bipolar transistors

The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×10¹⁹ cm^-3 at the emitter edge to 5×10¹⁸ cm^-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×10¹⁹ cm^-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40%     

Effect of precyclic loading on stress-corrosion-cracking initiation in an X-65 pipeline steel exposed to near-neutral pH soil environment

A study was carried out to understand the effect of precyclic loading on stress-corrosion-crack initiation in an X-65 pipeline steel exposed to a near-neutral-pH soil environment. The test specimens were precyclically loaded before corrosion exposure to represent a service history of up to about 20 years, depending on the severity of pressure fluctuation. Microcracks had initiated on the polished surface of the X-65 pipeline steel after long-time exposure at open-circuit potential (OCP) in a near-neutral-pH synthetic soil solution. These microcracks were mostly initiated from pits at metallurgical discontinuities such as grain boundaries, pearlitic colonies, and banded phases in the steel. Strong preferential dissolution was observed along planes of the banded structures in the steel. The selective corrosion attack at these metallurgical discontinuities is attributed to the galvanic nature of those areas to their neighbors. Cyclic loading prior to corrosion exposure had significant effects on microcrack initiation and propagation during subsequent corrosion exposure. Cyclic loading prior to corrosion exposure either reduced or increased the probability of crack initiation and the rate of crack propagation, depending upon the magnitude of the stress cycles. The largest reduction was seen at a peak cyclic stress of about 0.8 of the yield strength. This cyclic-loading-dependent cracking behavior might be related to the alteration of the substructures and the residual stress in the steel as a result of precyclic loading.     

Low cycle fatigue and creep behavior of recrystallized Molybdenum near room termperature

The deformation behavior of pure recrystallized molybdenum under cyclic and static loads was investigated in the temperature range between 30°C and 10O°C, for stress amplitudes between 100 MPa and 250 MPa and for static loads up to 200 MPa. The results show that in spite of the low test temperatures and stress levels the Mo material exhibits considerable plastic strains which depend sensitively on frequenez and small changes in temperature.The activation energy deduced for the static and dynamic deformation is less than 0.98 eV which indicates thermally activated processes, to be explained by a dislocation kink model as described in the literature. The low-temperature fatigue behavior appears strongly influenced by creep-fatigue interaction phenomena.     

分割电极片状压电致动器——(二)位移特性及狭缝宽度对其影响的实验研究

研究了悬臂梁式分割电极片状压电致动器的位移特性。理论分析表明，分割电极狭缝宽度会减小致动器自由端的位移输出，但当狭缝宽度小于致动器电极宽度的１０％时，可忽略狭缝宽度的影响。致动器端部位移的测试结果大于理论计算值。与现有磁头悬浮臂尺寸相近的致动器，在２０Ｖ～５０Ｖ的电压驱动下均可获得１μｍ～２μｍ的致动位移。对９８５０道／厘米的密度磁盘，该位移能覆盖至少一个磁道宽度，满足磁头定位两级伺服系统对第二级致动器位移的基本要求。