Low-temperature poly-SiGe alloy growth of high gain/speed pin infrared photosensor with gold-induced lateral crystallization (Au-ILC)

The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated using gold-induced lateral crystallization (Au-ILC) technology on a-SiGe:H layers at 10-h 350/spl deg/C annealing temperature and 60-sccm hydrogen (H/sub 2/) content. Using this optimal condition, the growth rate of the induced Au was as large as 15.9 /spl mu/m/h. With a low annealing temperature (/spl les/400/spl deg/C) and large growth rate, this novel technology will be noticeably useful for poly-SiGe:H pin IR-sensing fabrication on a conventional precoated indium tin oxide (ITO)-glass substrate. Under a 1-/spl mu/W IR-LED incident light (with peak wave length at 710 nm) and at a 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure allowed for maximum optical gain and response speed. The optical gains and the response speeds were almost 600 and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology was reduced from 280 to 150 nm. This reveals excellent IR-sensing selectivity. These IR-sensing trials demonstrated again that the proposed Au-ILC technology has very useful application in the field of low cost integrated circuits on optoelectronic applications.     

Fringing in tubular permanent-magnet machines: Part I. Magnetic field distribution, flux linkage, and thrust force

This paper extends an analysis developed for tubular permanent-magnet machines to account for the effect of fringing associated with the finite length of the ferromagnetic armature core. The magnetic field distribution, established by using an analytical technique formulated in the cylindrical coordinate system, provides an accurate means of evaluating the effect of the fringing flux on the thrust force and the back-electromotive force. Finite-element calculations confirm the analytically derived results. In Part II of the paper, the analysis is used to predict the cogging force that results from end effects and to facilitate minimization of the force.     

原油常减压装置节能技术

由于常减压装置消耗能量约占炼油厂总用能的25％～30％，已成为炼油厂中消耗量最大的装置，因此，我国各炼油厂对常减压装置进行以降低能耗为中心的技术改造就显得十分必要。详细介绍了适用于常减压装置节能的新工艺、新设备以及优化操作。工艺方面主要有采用过滤脱盐新技术对原油进行深度脱盐、采用强化蒸馏新工艺提高原油蒸馏拔出率、优化产出、增产柴油；设备方面主要使用规整填料和新型塔板改善分馏塔分馏效率、使用新型燃烧器提高加热炉效率、使用新型换热器提高热回收率、采用变频技术降低装置电耗；优化操作方面主要有利用计算机进行监控与管理和改善操作条件。最后对国内原油常减压装置节能改造提出了一些建议，以供炼油企业在进行原油常减压装置改造时参考。     

A CMOS multichannel 10-Gb/s transceiver

We describe a CMOS multichannel transceiver that transmits and receives 10 Gb/s per channel over balanced copper media. The transceiver consists of two identical 10-Gb/s modules. Each module operates off a single 1.2-V supply and has a single 5-GHz phase-locked loop to supply a reference clock to two transmitter (Tx) channels and two receiver (Rx) channels. To track the input-signal phase, the Rx channel has a clock recovery unit (CRU), which uses a phase-interpolator-based timing generator and digital loop filter. The CRU can adjust the recovered clock phase with a resolution of 1.56 ps. Two sets of two-channel transceiver units were fabricated in 0.11-/spl mu/m CMOS on a single test chip. The transceiver unit size was 1.6 mm /spl times/ 2.6 mm. The Rx sensitivity was 120-mVp-p differential with a 70-ps phase margin for a common-mode voltage ranging from 0.6 to 1.0 V. The evaluated jitter tolerance curve met the OC-192 specification.     

溶胶--凝胶镀膜技术综述(连载5)

第三节　常见氧化物膜目前研究最多的氧化物膜可谓二氧化硅和二氧化钛膜 ,这两种薄膜也是接受呈色离子、制备彩色镀膜常用的基体膜 ,所以 ,有必要将它们单独列出 ,加以讨论。1　二氧化钛膜在所有高折射率材料中 ,由钛的化合物制备的氧化物膜具有特殊的实际意义。因此 ,对二氧化     

Metastable phase relation and phase equilibria in the Cr2O3-Fe2O3 system

In order to ascertain the metastable phase relation in the Cr₂O₃-Fe₂O₃ system, the existing phases were investigated by X-ray analysis using samples obtained by heating the coprecipitated powders for 1 h at 600–1000°C. There was a metastable two-phase region of Cr₂O₃-rich (CC) and Fe₂O₃-rich (FC) phases below about 940°C. Equilibrium state of 1:1 composition at 600–900°C was considered to be a single phase of the corundum solid solution. The metastable two-phase CC + FC region was suggested to appear probably due to the compositional inhomogeneity in the coprecipitated powders.     

Dispersion-relation-preserving FDTD algorithms for large-scale three-dimensional problems

We introduce dispersion-relation-preserving (DRP) algorithms to minimize the numerical dispersion error in large-scale three-dimensional (3D) finite-difference time-domain (FDTD) simulations. The dispersion error is first expanded in spherical harmonics in terms of the propagation angle and the leading order terms of the series are made equal to zero. Frequency-dependent FDTD coefficients are then obtained and subsequently expanded in a polynomial (Taylor) series in the frequency variable. An inverse Fourier transformation is used to allow for the incorporation of the new coefficients into the FDTD updates. Butterworth or Chebyshev filters are subsequently employed to fine-tune the FDTD coefficients for a given narrowband or broadband range of frequencies of interest. Numerical results are used to compare the proposed 3D DRP-FDTD schemes against traditional high-order FDTD schemes.     

不同注F剂量与CMOS运放电路辐照损伤的相关性

在不同注F剂量条件下,对P沟和N沟两种不同差分对输入CMOS运放电路的电离辐照响应进行了研究.分析比较了注F和未注F运放电路电离辐照响应之间的差异.结果表明,在栅场介质注入适量的F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长,从而提高CMOS运放电路的抗辐照特性.     

Gamma-irradiation-induced Ag/SiO2 composite films and their optical absorption properties

Small Ag particles or clusters dispersed mesoporous SiO₂ composite films were prepared by a new method: First the matrix SiO₂ films were prepared by sol-gel process combined with the dip-coating technique, then they were soaked in AgNO₃ solutions followed by irradiation of γ-ray at room temperature and in ambient pressure. The structures of these films were examined by X-ray diffraction (XRD), high-resolution transmission electron microscope (HRTEM), and optical absorption spectroscopy. It has been shown that the Ag particles grown within the porous SiO₂ films are very small, and they are isolated and dispersed from each other with very narrow size distributions. With increasing the soaking concentration and an additional annealing, an opposite peakshift effect of the surface plasmon resonance (SPR) was observed in the optical absorption measurements.