Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

High-resolution electron microscopy of the twinning and intergrowth in Ca4Al6SO16 and Ca3SrAl6SO16

The microstructures of unhydrated calcium aluminosulphate Ca₄Al₆SO₁₆ and Ca₃SrAl₆SO₁₆ have been studied by high-resolution electron microscopy (HREM). The results showed that twinning and twinned slabs could be introduced taking the [1 1 2] direction as the twin axis so that it seems to be coincident with the law of twinning formed in body-centred cubic structures. A previously reported superlattice with a repeat period twice that of the fundamental structure along the 〈1 1 0〉 direction has also been found in both matrix and twin variants. The close intergrowth of Ca₃SrAl₆SO₁₆ and another phase, possibly Sr₃Al₂O₆ existing as an inclusion between these two twin variants, was determined and clearly revealed by electron diffraction and HREM images. The coherent interphase boundaries and orientation relationship between them can also be deduced.     

A Note on PIN Polynomials and PRIN Rational Functions

This brief presents a necessary and sufficient condition for testing positive, real, imaginary, and negative rational functions. A related term, the positive, imaginary, and negative polynomial, is defined and two necessary and sufficient conditions for testing it are given.     

Effect of refraction on optical microscopic measurement of internal blood-vessel diameter and its correction

In optical microscopic measurement of internal blood-vessel diameters, the effect of refraction must be taken into account to ensure accuracy of the result. This effect is discussed and an analytical correction formula derived. Phantom blood vessels with known internal and external diameters were used to test the validity of the correction formula. The errors obtained prior to correction were reduced significantly after correction.     

End-to-End QoS for Video Delivery Over Wireless Internet

Providing end-to-end quality of service (QoS) support is essential for video delivery over the next-generation wireless Internet. We address several key elements in the end-to-end QoS support, including scalable video representation, network-aware end system, and network QoS provisioning. There are generally two approaches in QoS support: the network-centric and the end-system centric solutions. The fundamental problem in a network-centric solution is how to map QoS criterion at different layers respectively, and optimize total quality across these layers. We first present the general framework of a cross-layer network-centric solution, and then describe the recent advances in network modeling, QoS mapping, and QoS adaptation. The key targets in end-system centric approach are network adaptation and media adaptation. We present a general framework of the end-system centric solution and investigate the recent developments. Specifically, for network adaptation, we review the available bandwidth estimation and efficient video transport protocol; for media adaptation , we describe the advances in error control, power control, and corresponding bit allocation. Finally, we highlight several advanced research directions.     

Effects of grain sizes, shapes, and distribution on minimum sizes of representative volume elements of cubic polycrystals

In the literature the concept of representative volume element (RVE) was introduced to correlate the effective or macroscopic properties of materials with the properties of the microscopic constituents and microscopic structures of the materials. However, to date little quantitative knowledge is available about minimum RVE sizes of various engineering materials. In our recent paper [J. Mech. Phys. Solids 50 (2002) 881], a new definition of minimum RVE size was introduced based on the concept of nominal modulus. Numerical experiments using the finite element method (FEM) were then carried out for determining the minimum RVE sizes of more than 500 cubic polycrystals in the plane stress problem, under the assumption that all grains in a polycrystal have the same square shape––called the simple polycrystal model. The major finding is that the minimum RVE sizes for effective elastic moduli have a roughly linear dependence on crystal anisotropy degrees. The present paper takes into account the effect of grain sizes, shapes, and distribution on the minimum RVE sizes for real cubic polycrystals that are formed by crystallization processes. Similar roughly linear dependence is found again, with the slope about 19% lower than that in the simple polycrystal model. This finding is interesting and useful because numerical experiments on minimum RVE sizes for a large number of crystals are quite time-consuming and the simple polycrystal model reduces significantly the FEM pre- and post-processing works. This should be particularly true in numerically testing minimum RVE sizes for three-dimensional polycrystals and for nonelastic properties in future works. With a maximum relative error 5%, all the polycrystals tested have a minimum RVE size of 16 or less times the grain size.