Testing procedure and results of tests performed on a VVÉR-1000 fuel assembly fragment in a MIR channel for a maximum anticipated accident

The testing procedure and the results of tests performed on a 19-element fragment of a VVéR-1000 fuel assembly in the channel of a MIR reactor under conditions of the second and third stage of a maximum anticipated accident are presented. The state arising in the reactor core with an uncompensated leak arising in the first cooling loop when a pipeline with the maximum diameter bursts (large leak) is studied in the experiment. In each case study, superheated steam cools the top part of the fuel elements. The main goal of the tests is to obtain data on the distortion of fuel-element cladding under tensile stresses. __________ Translated from Atomnaya énergiya, Vol. 103, No. 5, pp. 286–291, November, 2007.     

Linearization with respect to useful signal of relay control systems containing blocks with limiters

A method of linearization with respect to the useful signal of relay systems with the control plant containing blocks with limiters is proposed. Relay systems with two-position relay element are considered. The method allows studying the tracking mode of input signals in the relay system in a simple way. This is very important for synthesizing relay systems when a great number of variants need to be analyzed.     

Structure and properties of WC-Co alloys in solid-phase sintering. II. Mechanical properties of samples

The mechanical properties of hard WC-Co alloys produced by solid-phase sintering at various temperatures are discussed. It is shown that the bending strength and hardness of these alloys may be the same as those achieved in liquid-phase sintering. The difference between solid-phase and liquid-phase sintering is only in the time it takes to achieve the dense state. Excellent mechanical properties at rather low temperatures (1150–1200 °C) can be obtained by sintering under pressure. High hardness can be achieved at 1000–1100 °C by hot isostatic pressing of nanoscale powders. The excellent mechanical properties of solid-phase-sintered hard WC-Co alloys indicate that strong interphase and intercarbide boundaries occur earlier than the liquid phase.     

高碳铬铁电炉高基质干式打结料的研究

通过对组成打结料成分特性的研究，提出以优质原料生产的MgO-CaO-Fe2O3系合成砂为骨料，用MgO〉97％，粒度〈0．088mm烧结镁砂做细粉，适当添加超微粉等工艺措施，制成适当高碳铬铁电炉炉底用的高基质打结料，通过调控基质成分，实现材料相和固相的复合烧结。     

Statistical analysis of uniform-sampling phase-locked loops based on Volterra functional expansions

With the use of Volterra functional expansions in the domain of the multidimensional z transform, discrete uniform-sampling analogues of digital phase-locked loops of the first, second, and (N + 2)th orders with a delay of N sampling periods are analyzed.     

Combustion of boron-containing condensed systems

Moscow. Translated from Fizika Goreniya i Vzryva, Vol. 28, No. 1, pp. 51–53, January–February, 1992.     

Ultrathin oxide-nitride dielectrics for rugged stacked DRAMcapacitors

Ultrathin dielectric materials that provide high capacitance values are needed for 64- and 256-Mb stacked DRAMs. It is shown that capacitance values as high as 12.3 fF/μm² can be obtained with ultrathin nitride-based layers deposited on rugged polysilicon storage electrodes. These films present the reliability and low leakage current levels required for 3.3-V applications. The nitride thickness, however, cannot be scaled much below 6 nm to avoid the oxidation-punchthrough mechanisms that appear when too-thin films are unable to withstand the reoxidation step     

High-breakdown-voltage AlSbAs/InAs n-channel field-effecttransistors

InAs channel field-effect transistors of 1-μm gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs