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TD-CDM-OFDM: Evolution of TD-SCDMA toward 4G 总被引:3,自引:0,他引:3
TD-SCDMA, which is the "homemade" 3G standard in China, has received considerable attention and is believed to play a critical role in the development of China's mobile communication. Meanwhile, advanced MIMO and OFDM techniques shed light on the feasibility of high-performance 4G broadband systems. We discuss an evolutionary path of TD-SCDMA toward 4G systems in this article, which combines the existing advanced traits in TD-SCDMA with new features for broadband wireless communication systems. 相似文献
103.
Metal halide perovskites have gained a lot of attention par-ticularly in recent years due to their excellent optoelectronic properties and simple scalable processability[1-3].One major application of halide perovskites is solar cells,however,des-pite the power conversion efficiencies(PCEs)have already reached around 25%[4,5],the long-term stability issue of such devices still impedes their commercialization.Ionic liquids,which contain a large asymmetric organic cation and an organ-ic or inorganic anion,have recently been applied to per-ovskite solar cells(PSCs),not only increasing the efficiency but also remarkably improving the long-term stability[6,7]. 相似文献
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105.
Shi Mingji Wang Zhanguo Liu Shiyong Peng Wenbo Xiao Haibo Zhang Changsha Zeng Xiangbo 《半导体学报》2009,30(6):063001-063001-4
Boron-doped hydrogenated silicon films with different gaseous doping ratios (B2H6/SiH4) were deposited in a plasma-enhanced chemical vapor deposition (PECVD) system. The microstructure of the films was investigated by atomic force microscopy (AFM) and Raman scattering spectroscopy. The electrical properties of the films were characterized by their room temperature electrical conductivity (σ) and the activation energy (Ea). The results show that with an increasing gaseous doping ratio, the silicon films transfer from a microcrystalline to an amorphous phase, and corresponding changes in the electrical properties were observed. The thin boron-doped silicon layers were fabricated as recombination layers in tunnel junctions. The measurements of the Ⅰ-Ⅴ characteristics and the transparency spectra of the junctions indicate that the best gaseous doping ratio of the recombination layer is 0.04, and the film deposited under that condition is amorphous silicon with a small amount of crystallites embedded in it. The junction with such a recombination layer has a small resistance, a nearly ohmic contact, and a negligible optical absorption. 相似文献
106.
文章认为计费系统是云计算平台不可缺少的重要组成部分。在分析中国外著名企业的云计费模式的基础上,文章针对基础设施即服务(IaaS)云计算平台,提出了一种基于租赁实体的计费模型与基于事件触发机制的计费模型相结合的计费模型,利用租赁实体的计费模型对空闲的主机进行调度,通过事件触发机制对计费信息进行统计。该计费模型使云计费方式更加灵活。 相似文献
107.
Kan Zheng Hang Long Ling Wang Wenbo Wang Young-Il Kim 《Vehicular Technology, IEEE Transactions on》2009,58(4):1816-1822
Multiple-input-multiple-output (MIMO) technology can efficiently increase the system capacity in rich scattering environments without increasing the bandwidth or transmission power. The precoder for MIMO transmission is a processing technique that exploits the channel state information (CSI) by operating on the signal before transmission to effectively improve link performance. A hybrid automatic repeat request (HARQ) scheme can be incorporated with the linear precoder to ensure highly reliable communication. To fully utilize the type-I HARQ diversity gain, particularly in slow-fading channels, we propose the optimal design principle of linear precoders whose column vectors are correspondingly orthogonal to each other. In addition, the practical solution based on codebook is given in this paper. Finally, simulation results demonstrate the effectiveness of the proposed precoders in reducing the detection of bit error rate (BER) and in improving normalized throughput. 相似文献
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109.
Yanping Song Nian Li Shuai Han Shudong Zhang Liqing Chen Zhao Li Xinling Yu Cui Liu Min Xi Ge Wu Wenbo Wang Zhenyang Wang 《Advanced functional materials》2023,33(43):2305191
Creating 3D-engineered macroscopic architectures while inheriting the superior properties of individual building blocks remains one of the fundamental challenges in nanotechnology. Stable covalent interconnection between micro/nanoblocks is a desired but underexplored strategy to meet the challenges, rather than current dependently-used weak physical forces or organic cross-linking, which disrupts the continuity of chemical composition and electrical properties. Herein, a novel layer-by-layer covalent growth protocol is developed to construct all-graphene macrostructures (AGM) with micro-to-macro inheritable electrical properties by laser-assisted covalent linkage of polyethersulfone-derived 3D porous graphene microblocks without introducing any catalysts, templates, and additives. Creatively, along with graphene generation and inter-layer bonding, a quality optimization process is integrated into one-step laser irradiation, which is unique and efficient for synthesizing high-crystalline graphene. With the covalently nondestructive bridge and free of non-graphene foreign phase impurities, AGM shows unprecedented electrical conductivity, especially a more than 100-fold improvement in cross-layer conductivity compared with non-covalent assembly. Furthermore, the covalent growth mechanism of AGM is clarified by molecular dynamics simulations. Finally, the application efficacy of AGM with enhanced isotropic conductivity is verified by using it as a supercapacitor electrode. This methodology enables the as-obtained AGM to possess the potential for high-performance-pursuing, multi-disciplinary, or large-scale applications. 相似文献
110.