Ag Nanowire Reinforced Highly Stretchable Conductive Fibers for Wearable Electronics

Stretchable conductive fibers have received significant attention due to their possibility of being utilized in wearable and foldable electronics. Here, highly stretchable conductive fiber composed of silver nanowires (AgNWs) and silver nanoparticles (AgNPs) embedded in a styrene–butadiene–styrene (SBS) elastomeric matrix is fabricated. An AgNW‐embedded SBS fiber is fabricated by a simple wet spinning method. Then, the AgNPs are formed on both the surface and inner region of the AgNW‐embedded fiber via repeated cycles of silver precursor absorption and reduction processes. The AgNW‐embedded conductive fiber exhibits superior initial electrical conductivity (σ₀ = 2450 S cm^?1) and elongation at break (900% strain) due to the high weight percentage of the conductive fillers and the use of a highly stretchable SBS elastomer matrix. During the stretching, the embedded AgNWs act as conducting bridges between AgNPs, resulting in the preservation of electrical conductivity under high strain (the rate of conductivity degradation, σ/σ₀ = 4.4% at 100% strain). The AgNW‐embedded conductive fibers show the strain‐sensing behavior with a broad range of applied tensile strain. The AgNW reinforced highly stretchable conductive fibers can be embedded into a smart glove for detecting sign language by integrating five composite fibers in the glove, which can successfully perceive human motions.     

Unveiled Ferroelectricity in Well-Known Non-Ferroelectric Materials and Their Semiconductor Applications

Ferroelectric materials are considered ideal for emerging memory devices owing to their characteristic remanent polarization, which can be switched by applying a sufficient electric field. However, even several decades after the initial conceptualization of ferroelectric memory, its applications are limited to a niche market. The slow advancement of ferroelectric memories can be attributed to several extant issues, such as the absence of ferroelectric materials with complementary metal–oxide–semiconductor (CMOS) compatibility and scalability. Since the 2010s, ferroelectric memories have attracted increasing interest because of newly discovered ferroelectricity in well-established CMOS-compatible materials, which are previously known to be non-ferroelectric, such as fluorite-structured (Hf,Zr)O₂ and wurtzite-structured (Al,Sc)N. With advancing material fabrication technologies, for example, accurate chemical doping and atomic-level thickness control, a metastable polar phase, and switchable polarization with a reasonable electric field can be induced in (Hf,Zr)O₂ and (Al,Sc)N. Nonetheless, various issues still exist that urgently require solutions to facilitate the use of the ferroelectric (Hf,Zr)O₂ and (Al,Sc)N in emerging memory devices. Thus, ferroelectric (Hf,Zr)O₂ and (Al,Sc)N are comprehensively reviewed herein, including their fundamental science and practical applications.     

Empirical analysis of strategy selection for the technology leading and technology catch-up in the IT industry

R&D strategies of companies with low and high technological levels are discussed based on the concept of technology convergence and divergence. However, empirically detecting enterprise technology convergence in the distribution of enterprise technology (total productivity increase) over time and identifying key change factors are challenging. This study used a novel statistical indicator that captures the internal technology distribution change with a single number to clearly measure the technology distribution peak as a change in critical bandwidth for enterprise technology convergence and presented it as evidence of each technology convergence or divergence. Furthermore, this study applied the quantitative technology convergence identification method. Technology convergence appeared from the separation of total corporate productivity distribution of 69 IT companies in Korea in 2019–2020 rather than in 2015–2016. Results indicated that when the total technological level was separated from the technology leading and technology catch-up, IT companies were found to be pursuing R&D strategies for technology catch-up.     

Estimation of High-Frequency Currents From Near-Field Scan Measurements

High-frequency currents on the pins of integrated circuits (ICs) and on printed circuit board (PCB) traces are needed to predict and analyze electromagnetic interference in high-speed devices. These currents can, however, be difficult to measure when traces are buried within the PCB or chip-package, especially when several current-carrying traces are in close proximity. Techniques for estimating high-frequency currents from near-field scan data are proposed in this paper. These techniques are applied to find currents on the pins of an IC, on traces buried beneath other traces in a PCB, and on traces over a slot in the ground plane. Methods of dealing with the ill-posed nature of the current-estimation problem are discussed, as are applications to electrically large structures. A study of the sensitivity of the technique to errors in the measured fields, errors in the circuit geometry, and errors in the estimated dielectric constant of the PCB or chip package show that, for reasonable errors in these parameters, currents can be estimated to within an average of 20% (1.6 dB) or less of their correct values.     

A Linear Phase Condition for Volterra Filters

In linear finite-impulse-response filter design, it is desirable that the filter frequency response has linear phase (LP). In this brief, we investigate the LP concept for nonlinear Volterra filters. The LP condition of Volterra filters is defined in terms of its output spectrum in which the phase term introduced by the Volterra kernels is linear. It is shown that under certain symmetry conditions, the LP condition is satisfied by Volterra filters. Moreover, the LP condition for Volterra filters can be considered as an extension to the linear filter case.     

Consideration of the Actual Current-Spreading Length of GaN-Based Light-Emitting Diodes for High-Efficiency Design

Based on the proposed experimental method, the current spreading length of GaN-based light-emitting diodes (LEDs) was measured and analyzed for practical device design. In this study, Thompson's and Guo's models, which are categorized according to vertical series resistance (in particular, p-type contact resistance), were used to extract device parameters. It was shown that the measured current spreading length strongly depends on the injected current density. For LEDs fabricated with low-resistance p-type contacts, this behavior could be explained in terms of the accelerated current crowding with higher current densities occurring as a result of the reduced voltage drop across the junction, which is in good agreement with Thompson's relation. However, for LEDs fabricated with high-resistance p-contacts, unlike Guo's prediction, the measured current spreading length also showed a strong dependence on the injected current density. This was attributed to thermal heating at the p-contact, resulting in the reduction of the voltage drop across the p-contact and so junction voltage, which is also in agreement with Thompson's model. Based on the measured parameters and the design rule, efficient p-type reflectors, namely, hybrid reflectors were designed. Compared with conventional ones, LEDs fabricated with the hybrid reflectors exhibited better output power at a reasonable forward voltage, indicating that the proposed method is effective in understanding the actual current spreading and hence the practical design of high-efficiency LEDs.     

An ultraminiature CMOS pressure sensor for a multiplexedcardiovascular catheter

A multiplexed ultraminiature pressure sensor designed for use in a cardiovascular catheter is described. The sensor operates from only two loads, which are shared by two sensors per catheter. The sensing chip is 350 μm wide by 1.4 mm long by 100 μm thick. CMOS readout circuitry at the sensing site converts applied pressure to a frequency variation in the supply current, which is detected at the end of the catheter by a microprocessor-controlled interface. The nominal pressure sensitivity is 2 kHz/fF about a zero-pressure output frequency of 2.7 MHz. This on-site circuitry contains two reference capacitors which allow external compensation for nonlinearity and temperature sensitivity and has an idle-state power dissipation of less than 50 μW. With the transducer sealed at ambient pressure, the device can resolve pressure variations of about 3 mmHg, while vacuum-sealed devices do considerably better and should permit <2 mmHg resolution in practical systems     

Nonlinear two-dimensional velocity profile inversion using timedomain data

An iterative algorithm is developed to solve the nonlinear inverse scattering problem for two-dimensional lossless dielectric inhomogeneities using time-domain scattering data. The method is based on performing Born-type iterations on a volume integral equation and, hence, successively calculating higher-order approximations to the unknown object profile. Both the full-angle and the limited-angle problems are considered. Solutions are obtained for cases where the first-order Born approximation is severely violated. Wideband time-domain scattered field measurements make it possible to use sparse data sets and thus reduce experimental complexity and computation time. Several examples are given to show the ability of this method to invert arbitrarily shaped permittivity profiles using few transmitters and receivers. The high-resolution capability of the algorithm is also demonstrated     

Synchronous current control scheme with reference voltage estimation for voltage-fed PWM inverter

A new current control scheme with the reference voltage estimation for a voltage-fed pulsewidth modulated (PWM) inverter is presented. This scheme is simple and can provide smaller current error than predictive control with the same switching frequency when the load parameters are mismatched.<>     

ATM中话音源的统计模型分析

本文根据ＡＴＭ网的传输特点,从统计的角度分析话音源的特点,建立统计模型并对其统计特性进行分析。