High-speed 8:1 multiplexer and 1:8 demultiplexer implemented withAlGaAs/GaAs HBTs

An 8:1 multiplexer (MUX) and 1:8 demultiplexer (DMUX) implemented with AlGaAs/GaAs heterojunction bipolar transistors are described. The circuits were designed for lightwave communications, and were demonstrated to operate at data rates above 6 Gb/s. These are among the fastest 8-b MUX-DMUX circuits ever reported. Each contains about 600 transistors and consumes about 1.5 W. The pair provides features such as resettable timing, data framing, and clock recovery circuitry, and a built-in decision circuit on the DMUX. Emitter-coupled logic (ECL) compatible input/output (1/O) signals are available. The circuits were implemented with bi-level current mode logic (CML) and require a -5.2-V power supply and a +1-V bias for ECL compatibility     

Quantum interference effects in semiconductors: a bibliography

The bibliography has been compiled as an introduction and study guide to this field. The papers listed describe the extensive theoretical and experimental results that have been obtained on quantum interference effects and discuss possible application areas. Works of a fundamental nature concerning phenomena that are basic to all semiconductor behavior have not been included. Articles on the properties and band structure of semiconductors, which are essential to a complete understanding of quantum interference effects, have not been included. Conference papers, though frequently very important, have not been included to conserve space. The papers are listed alphabetically according to the first author's surname. As in the compilation of any bibliography, numerous valuable and pertinent articles have probably been inadvertently omitted     

Physical design issues for very large ATM switching systems

The authors examine the physical design issues associated with terabit/second switching systems, particularly with regard to the customer access portion of the switch. They determine the physical design requirements in the areas of backplane interconnections, integrated circuit packaging, and circuit board technology and identify areas where existing- or near-future physical design technologies are inadequate to meet the requirements of this application. A new 3D interconnection architecture that solves some of the problems encountered at the backplane level is suggested. It is also suggested that multichip module technology will help meet some of the speed and density requirements at the chip packaging level. Some of the system-level consequences of the proposed model are discussed     

A shape memory polymer dialysis needle adapter for the reduction of hemodynamic stress within arteriovenous grafts

A deployable, shape memory polymer adapter is investigated for reducing the hemodynamic stress caused by dialysis needle flow impingement within an arteriovenous graft. Computational fluid dynamics simulations of dialysis sessions with and without the adapter demonstrate that the adapter provides a significant decrease in the wall shear stress. Preliminary in vitro flow visualization measurements are made within a graft model following delivery and actuation of a prototype shape memory polymer adapter. Both the simulations and the qualitative flow visualization measurements demonstrate that the adapter reduces the severity of the dialysis needle flow impingement on the vascular access graft.     

Rare Earth Additions in Continuously Cast Steel

Rare earth (lanthanide metals) addiiions to continuously cast steel are particularly advantageous because of their ability to refine as-cast structures, reduce segregation and increase hot ductility at temperatures just below that of solidification. The complete shape control of sulfides in steels containing Rare Earth Metals (REM), whether continuously cast or ingot cast, is primarily responsible for improvements in ductility related mechanical properties, weldability, fatigue resistance and resistance to hydrogen damage. Complete sulfide shape control can be obtained with REM additions at sulfur levels as high as.020%. The greatest improvements, however, are obtained with REM additions to low sulfur steels. However, to achieve full operational advantages afforded by REM, nozzle blockage problems must be circumvented. Water model studies indicate a possible solution.     

Analysis of Rapidly Twisted Hollow Waveguides

The propagation characteristics of twisted hollow waveguides are considered, and various analysis methods are proposed. It is shown that a twisted hollow waveguide can support waves that travel at a speed slower than the speed of light c. These modes are of particular interest, as slow wave structures have many potential applications in accelerators and electron traveling wave tubes. Since there is no exact closed form solution for the electromagnetic fields within a twisted waveguide or cavity, several previously proposed approximate methods are examined. It is found that the existing perturbation theory methods yield adequate results for slowly twisted structures; however, our efforts here are geared toward analyzing rapidly twisted structures using newly developed finite-difference methods. To validate the results of the theory and simulations, rapidly twisted cavity prototypes have been designed, fabricated, and measured. These measurement results are compared to simulated results, and very good agreement has been demonstrated.     

High-stability L-band radiometer measurements of saltwater

L-band radiometer brightness temperature measurements of a saltwater pond were made as a function of salinity and temperature. A precision L-band radiometer with stability better than 0.1 K per day was used for these measurements. The L-band measurements are in good agreement with three dielectric constant models over a temperature range from 8/spl deg/C to 32/spl deg/C and a salinity range from 25-40 psu. Based on this experiment, these dielectric models will provide an excellent basis for the algorithm development and design of the future National Aeronautics and Space Administration Aquarius satellite mission.     

Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy

A small indium flux was used as a surfactant during the growth of gallium nitride by rf-plasma assisted molecular beam epitaxy. The effects of the In surfactant on the optical and structural properties of undoped GaN were studied by photoluminescence (PL), X-ray diffraction, atomic force microscopy (AFM), and Rutherford backscattering spectrometry (RBS). PL studies show that the use of In surfactant is beneficial to the reduction of deep-level defects. The X-ray rocking curves demonstrate a 20% decrease in the full width at half maximum value for the films grown with In surfactant. AFM studies show that the root mean squared surface roughness for films grown with and without In surfactant are 5.86 and 6.99 nm respectively indicating significant improvement in surface morphology. The improved surface morphology is attributed to the enhanced 2-dimensional growth promoted by the application of In surfactant. RBS studies show that the χ_min values along [0 0 0 1] direction are 2.06% and 2.16% for the samples grown with and without In surfactant respectively. Off-normal ion channeling studies were performed to further investigate the effects of In surfactant on the crystallinity. It is found that the number density of stacking faults is smaller for the sample grown with In surfactant compared to the one grown without In surfactant. However, defect analysis shows that dislocations are found in the sample grown with In surfactant in contrary to the one grown without In surfactant. We speculate that there is a thickness limit of GaN grown with In surfactant and the thickness of our samples exceed this limit, leading to the presence of dislocation.     

Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

In p-GaN implanted with Mn (3×10¹⁶ cm⁻² at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely Ga_xMn_1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.     

Magnetism in SiC implanted with high doses of Fe and Mn

High concentrations (0.1–5 at.%) of Mn or Fe were introduced into the near-surface region (≤2000 Å) of 6H-SiC substrates by direct implantation at ～300°C. After annealing at temperatures up to 1000°C, the structural properties were examined by transmission electron microscopy (TEM) and selected-area diffraction pattern (SADP) analysis. The magnetic properties were examined by SQUID magnetometry. While the Mn-implanted samples were paramagnetic over the entire dose range investigated, the Fe-implanted material displayed a ferromagnetic contribution present at <175 K for the highest dose conditions. No secondary phases were detected, at least not to the sensitivity of TEM or SADP.