Decision-directed maximum-likelihood estimation of OFDM framesynchronisation offset

The authors propose a method to estimate the synchronisation offset for orthogonal frequency division multiplexing (OFDM) frame alignment without resort to pilot tones. A decision-directed maximum-likelihood estimation of frame synchronisation offset is derived, and the performance of the proposed scheme is confirmed by computer simulation for QAM systems     

Modeling the I-V characteristics of fully depleted submicrometerSOI MOSFET's

In this paper, an analytic current-voltage model for submicrometer fully-depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented. This model takes into account the source/drain series resistances which can be especially high in thin film SOI devices. The effect of drain induced conductivity enhancement is also included, which is important for submicrometer channels. The model is verified by comparison to measured SOI I-V characteristics. Good agreement is obtained for SOI film thicknesses ranging from 40 to 220 nm and effective channel lengths down to 0.25 μm     

A quadruple well, quadruple polysilicon BiCMOS process for fast 16Mb SRAM's

An advanced, high-performance, quadruple well, quadruple polysilicon BiCMOS technology has been developed for fast 16 Mb SRAM's. A split word-line bitcell architecture, using four levels of polysilicon and two self-aligned contacts, achieves a cell area of 8.61 μm² with conventional I-line lithography and 7.32 μm² with I-line plus phase-shift or with deep UV lithography. The process features PELOX isolation to provide a 1.0 μm active pitch, MOSFET transistors designed for a 0.80 μm gate poly pitch, a double polysilicon bipolar transistor with aggressively scaled parasitics, and a thin-film polysilicon transistor to enhance bitcell stability. A quadruple-well structure improves soft error rate (SER) and allows simultaneous optimization of MOSFET and bipolar performance     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

Effects of α‐form or β‐form nuclei on polymorphic crystalline morphology of poly(butylene adipate)

The effects of α‐form and β‐form nuclei on polymorphic morphology of poly(butylene adipate) (PBA) upon recrystallization from the molten state up to various T_max values were examined by differential scanning calorimetry (DSC), wide‐angle X‐ray diffraction (WAXD) and polarized light microscopy (PLM). In this study, PBA with complex melting and polymorphism behaviour was used as a model for examining different types and extents of residual nuclei. As the PBA initially containing the sole α‐crystal was brought to a molten state of various T_max, the extents of trace α‐form crystal nuclei varied and were dependent on T_max. Furthermore, it did not matter whether, initially, the PBA contained α‐ or β‐form crystals (or both) because only a single type of α‐nuclei could be left upon treatment to the molten liquid state at T_max. Therefore, only the α‐crystal in PBA had ‘memory capacity’ in the molten liquid state while the β‐crystal did not. This was so because the latter had been completely transformed into the solid state prior to being heated into a liquid. PBA crystallized before α‐nuclei could be packed into α‐crystal, regardless of the crystallization temperature (T_c). For recrystallization from molten PBA without any nuclei, the crystalline polymorphism was correspondingly influenced by T_c. Copyright © 2005 Society of Chemical Industry     

Socially constructing sexuality: Toward a postmodernist theory of sexual intimacy.

Takes issue with the biological focus of traditional theories of sexuality, drawing on postmodern trends such as hermeneutics and social constructionism. It is argued that traditional theories are characterized by a reductionism that precludes meaningfulness and an individualism that precludes genuine intimacy. The theories thus offer an essentially barren account of what is otherwise a richly meaningful human activity. A more fruitful account of human sexuality begins with acknowledging that sexuality is a fundamentally social and meaningful phenomenon and that it can only be understood in the social, historical, and moral context in which human beings live and act. If the linguistic aspect of sexuality were at the heart of theories, biological information could be given its proper place as context for understanding. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Error Concealment Based on Semantic Prioritization with Hardware‐Based Face Tracking

With video compression standards such as MPEG‐4, a transmission error happens in a video‐packet basis, rather than in a macroblock basis. In this context, we propose a semantic error prioritization method that determines the size of a video packet based on the importance of its contents. A video packet length is made to be short for an important area such as a facial area in order to reduce the possibility of error accumulation. To facilitate the semantic error prioritization, an efficient hardware algorithm for face tracking is proposed. The increase of hardware complexity is minimal because a motion estimation engine is efficiently re‐used for face tracking. Experimental results demonstrate that the facial area is well protected with the proposed scheme.     

New approach to enhance adhesions between carbon nanotube emitters and substrate by the combination of electrophoresis and successive electroplating

Complementary electroplating combined with electrophoresis enhanced the field emission characteristics of emitters by improving the adhesions between CNT emitters and substrate. The emitting current of the CNT emitters prepared by our combined method increased nine times higher than that of CNT emitters prepared by electrophoresis only, since electroplating improved the adhesion of CNT emitters. During the life-time measurement for 10 h, the emitting current of CNT emitters fabricated by electrophoresis only was drastically decreased to 13% of the initial current, while that prepared by the combination of electrophoresis and successive electroplating decreased to 64% of the initial current. We suggest that our method is a promising approach for the efficient fabrication of reliable CNT emitters.     

Epitaxial growth of GaN on (0001) Al<Subscript>2</Subscript>O<Subscript>3</Subscript> via solution-cast seed layer formation process using Ga(mDTC)<Subscript>3</Subscript>

This paper reports an alternative method for the growth of GaN epitaxial layer on (0001) Al₂O₃ substrate by hot-wall vapor phase epitaxy technique. Tris (N,N-dimethyldithiocarbamato)-gallium (III), Ga(mDTC)₃ was introduced as a precursor material for the seed layer formation in the growth of GaN. Optimal growth conditions with seed layers formed by the Ga(mDTC)₃ concentration of 0.047 mol/L were identified: Growth temperature was found to be 850 °C, and optimal distance between the reactant outlet and substrate was determined to be 12.5 cm. Characterization results showed that this growth method produce high-crystallinity GaN epitaxial layers at a relatively lower growth temperature compared to the existing growth techniques and simplify the growth process.     

Notch in contrast sensitivity function of optical origin: diffraction effects of acrylic filters

It was for the first time that of the fifth year of monitoring of Plantago lanceolata L., reproduced within the thirty-kilometer zone of Chernobyl NPP disaster, the authors discovered high incidence of seedlings with various morphological abnormalities. It is suggested that the damages observed are related to the cumulative effect of radiation.