High current conduction with high mobility by non-radiative charge recombination interfaces in organic semiconductor devices

We report a unique non-radiative p-n-p junction structure to provide high current conduction with high mobility in organic semiconductor devices. The current conduction was improved by increasing p-n junctions made with intrinsic p-type hole transport layer and n-type electron transport layer. The excellent hole mobility of 5.3 × 10^?1 cm²/V s in this p-n-p device configuration is measured by the space charge limited current method with an electric field of 0.3 MV/cm. Enhanced current conduction of 248% at 4.0 V was observed in fluorescent blue organic light-emitting diodes with introduction of non-radiative p-n-p-n-p junction interfaces. Thereupon, the power efficiency at 1000 cd/m² was improved by 22% and the driving voltage also was reduced by 17%, compared to that of no interface device. Such high current conduction with high mobility is attributed to the carrier recombination at p-n-p interfaces through coulombic interaction. This non-radiative p-n-p junction structure suggested in this report can be very useful for many practical organic semiconductor device applications.     

Threshold voltage reduction model for buried channel PMOSFETs using quasi-2-D Poisson equation

A quasi-two-dimensional (2-D) threshold voltage reduction model for buried channel pMOSFETs is derived. In order to account for the coexistence of isoand anisotype junctions in a buried channel structure, we have incorporated charge sharing effect in the quasi-2-D Poisson model. The proposed model correctly predicts the effects of drain bias (V/sub DS/), counter doping layer thickness (x/sub CD/), counter doping concentration (N/sub CD/), substrate doping concentration (N/sub sub/) and source/drain junction depth (x/sub j/), and the new model performs satisfactorily in the sub-0.1 /spl mu/m regime. By using the proposed model on the threshold voltage reduction and subthreshold swing, we have obtained the process windows of the counter doping thickness and the substrate concentration. These process windows are very useful for predicting the scaling limit of the buried channel pMOSFET with known process conditions or systematic design of the buried channel pMOSFET.     

Facile Fabrication and Superparamagnetism of Silica‐Shielded Magnetite Nanoparticles on Carbon Nitride Nanotubes

Using conventional methods to synthesize magnetic nanoparticles (NPs) with uniform size is a challenging task. Moreover, the degradation of magnetic NPs is an obstacle to practical applications. The fabrication of silica‐shielded magnetite NPs on carbon nitride nanotubes (CNNTs) provides a possible route to overcome these problems. While the nitrogen atoms of CNNTs provide selective nucleation sites for NPs of a particular size, the silica layer protects the NPs from oxidation. The morphology and crystal structure of NP–CNNT hybrid material is investigated by transmission electron microscopy (TEM) and X‐ray diffraction. In addition, the atomic nature of the N atoms in the NP–CNNT system is studied by near‐edge X‐ray absorption fine structure spectroscopy (nitrogen K‐edge) and calculations of the partial density of states based on first principles. The structure of the silica‐shielded NP–CNNT system is analyzed by TEM and energy dispersive X‐ray spectroscopy mapping, and their magnetism is measured by vibrating sample and superconducting quantum interference device magnetometers. The silica shielding helps maintain the superparamagnetism of the NPs; without the silica layer, the magnetic properties of NP–CNNT materials significantly degrade over time.     

Restorable Type Conversion of Carbon Nanotube Transistor Using Pyrolytically Controlled Antioxidizing Photosynthesis Coenzyme

Here, a pyrolytically controlled antioxidizing photosynthesis coenzyme, β‐Nicotinamide adenine dinucleotide, reduced dipotassium salt (NADH) for a stable n‐type dopant for carbon nanotube (CNT) transistors is proposed. A strong electron transfer from NADH, mainly nicotinamide, to CNTs takes place during pyrolysis so that not only the type conversion from p‐type to n‐type is realized with 100% of reproducibility but also the on/off ratio of the transistor is significantly improved by increasing on‐current and/or decreasing off‐current. The device was stable up to a few months with negligible current changes under ambient conditions. The n‐type characteristics were completely recovered to an initial doping level after reheat treatment of the device.     

Estimation of anomaly location and size using electrical impedance tomography

We developed a new algorithm that estimates locations and sizes of anomalies in electrically conducting medium based on electrical impedance tomography (EIT) technique. When only the boundary current and voltage measurements are available, it is not practically feasible to reconstruct accurate high-resolution cross-sectional conductivity or resistivity images of a subject. In this paper, we focus our attention on the estimation of locations and sizes of anomalies with different conductivity values compared with the background tissues. We showed the performance of the algorithm from experimental results using a 32-channel EIT system and saline phantom. With about 1.73% measurement error in boundary current-voltage data, we found that the minimal size (area) of the detectable anomaly is about 0.72% of the size (area) of the phantom. Potential applications include the monitoring of impedance related physiological events and bubble detection in two-phase flow. Since this new algorithm requires neither any forward solver nor time-consuming minimization process, it is fast enough for various real-time applications in medicine and nondestructive testing.     

A gm-boosted common-gate CMOS low-noise amplifier with high P1dB

A 2.4-GHz transconductance (g_m)—boosted common gate (CG) low-noise amplifier (LNA) with a high 1-dB compression point (P1dB) is proposed. To overcome the constraint of conventional CG LNA for input-mismatching, RF filters consisting of band-stop and high-pass filter are used as a load and inter-stage matching components, respectively. Therefore, the g _m can be freely increased for a high gain and low noise figure (NF) without decreasing input impedance. Moreover, the linearity is also enhanced because band-stop filter load can reduce 2nd harmonics. The fully integrated LNA implemented by 0.18-µm RF CMOS technology delivers an input P1dB of ?1 dBm, a power gain of 14.8 dB and a NF of 3.7 dB. The LNA consumes 8.2 mA at a supply voltage of 1.8 V.     

Effect of Oxygen Binding Energy on the Stability of Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistors

From a practical viewpoint, the topic of electrical stability in oxide thin‐film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium‐gallium‐zinc‐oxide (IGZO)‐TFTs have revealed that an IGZO‐TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X‐ray photoelectron spectroscopy analysis.     

Engineering of charge transport materials for universal low optimum doping concentration in phosphorescent organic light-emitting diodes

A universal low optimum doping concentration of below 5% was demonstrated in phosphorescent organic light-emitting diodes (PHOLEDs) by managing the energy levels of charge transport materials. The device performances of PHOLEDs could be optimized at a low doping concentration of 3% irrespective of the host material in the emitting layer. The suppression of charge trapping and hopping by the dopant through charge transport layer engineering optimized the device performance at low doping concentration. In addition, it was revealed that PHOLEDs with low optimum doping concentration show better quantum efficiency, low efficiency roll-off and low doping concentration dependency of the device performance.