Two additional cases of metformin‐associated encephalopathy in patients with end‐stage renal disease undergoing hemodialysis

We report on two additional cases of metformin‐associated encephalopathy in patients with end‐stage renal disease (ESRD) undergoing hemodialysis. Two patients were seen at our hospital with abnormal neurological signs and symptoms. Magnetic resonance imaging (MRI) revealed the same pattern of high signal intensity in both basal ganglia in T2‐weighted images in the two patients. The two patients had started taking metformin 5 and 6 weeks earlier at the same dose of 1000 mg per day. Metformin was immediately stopped, and regular hemodialysis was conducted. Their signs and symptoms resolved completely after these measures. The high signal intensity in both ganglia in T2‐weighted MRI also disappeared. We should suspect metformin‐induced encephalopathy and withdraw the drug when presented with diabetic patients with chronic kidney disease and neurological signs and symptoms of unknown cause.     

Deformable Organic Nanowire Field‐Effect Transistors

Deformable electronic devices that are impervious to mechanical influence when mounted on surfaces of dynamically changing soft matters have great potential for next‐generation implantable bioelectronic devices. Here, deformable field‐effect transistors (FETs) composed of single organic nanowires (NWs) as the semiconductor are presented. The NWs are composed of fused thiophene diketopyrrolopyrrole based polymer semiconductor and high‐molecular‐weight polyethylene oxide as both the molecular binder and deformability enhancer. The obtained transistors show high field‐effect mobility >8 cm² V^?1 s^?1 with poly(vinylidenefluoride‐ co ‐trifluoroethylene) polymer dielectric and can easily be deformed by applied strains (both 100% tensile and compressive strains). The electrical reliability and mechanical durability of the NWs can be significantly enhanced by forming serpentine‐like structures of the NWs. Remarkably, the fully deformable NW FETs withstand 3D volume changes (>1700% and reverting back to original state) of a rubber balloon with constant current output, on the surface of which it is attached. The deformable transistors can robustly operate without noticeable degradation on a mechanically dynamic soft matter surface, e.g., a pulsating balloon (pulse rate: 40 min^?1 (0.67 Hz) and 40% volume expansion) that mimics a beating heart, which underscores its potential for future biomedical applications.     

Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures

Vertical integration of 2D layered materials to form van der Waals heterostructures (vdWHs) offers new functional electronic and optoelectronic devices. However, the mobility in vertical carrier transport in vdWHs of vertical field‐effect transistor (VFET) is not yet investigated in spite of the importance of mobility for the successful application of VFETs in integrated circuits. Here, the mobility in VFET of vdWHs under different drain biases, gate biases, and metal work functions is first investigated and engineered. The traps in WSe₂ are the main source of scattering, which influences the vertical mobility and three distinct transport mechanisms: Ohmic transport, trap‐limited transport, and space‐charge‐limited transport. The vertical mobility in VFET can be improved by suppressing the trap states by raising the Fermi level of WSe₂. This is achieved by increasing the injected carrier density by applying a high drain voltage, or decreasing the Schottky barrier at the graphene/WSe₂ and metal/WSe₂ junctions by applying a gate bias and reducing the metal work function, respectively. Consequently, the mobility in Mn vdWH at +50 V gate voltage is about 76 times higher than the initial mobility of Au vdWH. This work enables further improvements in the VFET for successful application in integrated circuits.     

Transient SHG Imaging on Ultrafast Carrier Dynamics of MoS2 Nanosheets

Understanding the collaborative behaviors of the excitons and phonons that result from light–matter interactions is important for interpreting and optimizing the underlying fundamental physics at work in devices made from atomically thin materials. In this study, the generation of exciton‐coupled phonon vibration from molybdenum disulfide (MoS₂) nanosheets in a pre‐excitonic resonance condition is reported. A strong rise‐to‐decay profile for the transient second‐harmonic generation (TSHG) of the probe pulse is achieved by applying substantial (20%) beam polarization normal to the nanosheet plane, and tuning the wavelength of the pump beam to the absorption of the A‐exciton. The time‐dependent TSHG signals clearly exhibit acoustic phonon generation at vibration modes below 10 cm^?1 (close to the Γ point) after the photoinduced energy is transferred from exciton to phonon in a nonradiative fashion. Interestingly, by observing the TSHG signal oscillation period from MoS₂ samples of varying thicknesses, the speed of the supersonic waves generated in the out‐of‐plane direction (Mach 8.6) is generated. Additionally, TSHG microscopy reveals critical information about the phase and amplitude of the acoustic phonons from different edge chiralities (armchair and zigzag) of the MoS₂ monolayers. This suggests that the technique could be used more broadly to study ultrafast physics and chemistry in low‐dimensional materials and their hybrids with ultrahigh fidelity.