首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   8309篇
  免费   779篇
  国内免费   11篇
电工技术   112篇
综合类   9篇
化学工业   2228篇
金属工艺   274篇
机械仪表   495篇
建筑科学   125篇
矿业工程   3篇
能源动力   336篇
轻工业   534篇
水利工程   14篇
石油天然气   5篇
武器工业   2篇
无线电   1482篇
一般工业技术   2075篇
冶金工业   522篇
原子能技术   118篇
自动化技术   765篇
  2024年   7篇
  2023年   88篇
  2022年   122篇
  2021年   198篇
  2020年   178篇
  2019年   255篇
  2018年   263篇
  2017年   270篇
  2016年   367篇
  2015年   300篇
  2014年   419篇
  2013年   552篇
  2012年   584篇
  2011年   705篇
  2010年   483篇
  2009年   531篇
  2008年   467篇
  2007年   343篇
  2006年   290篇
  2005年   259篇
  2004年   250篇
  2003年   257篇
  2002年   220篇
  2001年   164篇
  2000年   166篇
  1999年   160篇
  1998年   206篇
  1997年   174篇
  1996年   141篇
  1995年   93篇
  1994年   65篇
  1993年   82篇
  1992年   57篇
  1991年   62篇
  1990年   46篇
  1989年   26篇
  1988年   31篇
  1987年   15篇
  1986年   14篇
  1985年   33篇
  1984年   16篇
  1983年   10篇
  1982年   7篇
  1981年   12篇
  1980年   16篇
  1979年   13篇
  1977年   11篇
  1976年   18篇
  1975年   13篇
  1974年   9篇
排序方式: 共有9099条查询结果,搜索用时 0 毫秒
771.
This work reports the first replacement (damascene) metal gate NMOSFETs with atomic layer deposition (ALD) TaN/PVD and electroplated Cu as the stacked gate electrode. Transistors with PVD TaN and PVD Ta electrode are also fabricated. Our data show that ALD TaN has the right work function for the N-MOSFETs. The Cu damascene process can reduce the gate resistivity. The ALD process has the advantage of reducing the stress and radiation damage to the gate oxide. The damascene process flow bypasses high temperature steps (>600/spl deg/C)-critical for metal gate and high-k materials.  相似文献   
772.
Dynamics of fast dislocations   总被引:1,自引:0,他引:1  
Plastic deformation of crystalline solids at ultra-high strain rates may involve dislocations moving at supersonic speeds, the feasibility of which has been demonstrated via molecular dynamics simulation. The motion of these dislocations in a crystal depends on the defects they encounter, which may slow, or even pin, them down. Recently, we have conducted a series of investigations on the dynamics of transonic dislocations during their interactions with other dislocations, small voids and small interstitial loops, using the molecular dynamics method. The results indicate that a transonic dislocation will be slowed down to subsonic speed by a subsonic dislocation in front of it, and that approaching dislocations at sufficiently high velocities may not form a stable dipole. Small defects, like voids and interstitial clusters, on the other hand, will only temporarily slow down a segment of the transonic dislocation, which absorbs the interstitial loop by forming jogs, and sweeps the void into a few smaller defects of vacancy type. Upon release from the clusters, this segment of dislocation regains speed and becomes transonic again. In view of the possible important role played by high-speed dislocations during high-speed deformation, and from the point of scientific interest, we summarize this series of investigations, and discuss their implications in the present paper.  相似文献   
773.
A two-parameter transmission technique is described for online, in situ measurement of the bulk moisture content of grains using microwaves. This noncontacting 4.9-GHz system is configured so that a well-collimated TEM beam is transmitted through a layer of grain, e.g., moving on a conveyer or flowing in a chute. The changes in attenuation and phase serve as two independent measurement parameters from which the wet and dry basis weights (grams per square centimeter) and moisture can be found using a linear model, independent of the layer thickness. If the layer thickness is also known, the wet and dry densities (grams per cubic centimeter) and complex dielectric constant can be found  相似文献   
774.
We proposed "reverse-order source/drain formation with double offset spacer" (RODOS) structure for low-power and high-speed applications. Both simulation and experimental data were used to evaluate the potential of the structure. It showed improved performance in terms of poly-depletion effect, dc characteristics, gate delay (CV/I), switching energy (CV/sup 2/) and linearity (V/sub IP3/). It satisfied all the requirements of LOP and LSTP for 90 nm technology node in ITRS 2002. Simulation predicted 794 /spl mu/A//spl mu/m in on-current, 0.1 nA//spl mu/m in off-current, 65 mV/V in DIBL, 80 mV/dec in SS, 1.29 ps in gate delay, 198 GHz in f/sub T/ and 0.151 fJ in switching energy in addition to enhanced linearity. Finally, we confirmed the high feasibility and potential of the RODOS MOSFET's for low-power and high-speed applications such as an LNA in portable communication appliances.  相似文献   
775.
This article proposes a method for the global optimization of redundancy over the whole task period in a kinematically redundant manipulator. The necessary conditions based on the calculus of variations for integral-type criteria result in a second-order differential equation. For a cyclic task, the boundary conditions for conservative joint motions are discussed. Then, we reformulate a two-point boundary value problem to an initial value adjustment problem and suggest a numerical search method based on the iterative optimization for providing a globally optimal solution using the gradient projection method. Since the initial joint velocity is parameterized with the number of redundancy, we only search parameter values in the parameterized space using the configuration error between the initial and final time. We show through numerical examples that multiple nonhomotopic extremal solutions satisfying periodic boundary conditions exist according to initial joint velocities for the same initial configuration. Finally, we discuss an algorithm for topological liftings of the paths and demonstrate the generality of the proposed method by considering the dynamics of a manipulator.  相似文献   
776.
通过采用锁相放大器,演示了一种性能明显提高的锁模光纤激光陀螺.结果表明锁相放大器的输出与转动速率之间具有理想的线性关系,并对两脉冲(在时间间隔测量过程中引起相位误差)之间的光强差不敏感.与以往报道的时间间隔测量相比,演示了长期稳定性提高了二个数量级.  相似文献   
777.
778.
Negative-differential transconductance characteristics at room temperature with a peak-to-valley ratio of about two were observed in 30-nm square-channel silicon-on-insulator nMOSFETs with degenerately doped bodies. High channel-doping concentration creates the degeneracy in the p-type body of the self-aligned SOI MOSFET and consequently, enables band-to-band tunneling between degenerate body and source-drain. I/sub DS/-V/sub DS/ curves in the negative drain bias region also show band-to-band tunneling current as in the case of forward-biased p-n tunnel junctions.  相似文献   
779.
780.
The structure and mechanical properties of polyacrylonitrile fibers containing small amounts of Zn2+ were investigated. It is possible to interpret the influence of ZnCl2 on the fibers by diffusion. Fibers spun from spinning dope containing ZnCl2 may have a denser and finer structure because ZnCl2 in the spinning dope retards the coagulation rate. The tensile strength and modulus of the fibers are much improved because of the retardation of coagulation. It is probable that the complexation between Zn2+ and CN groups does not contribute to the improvement of the mechanical properties because the amount of ZnCl2 added in a spinning dope is extremely small.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号