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51.
We have studied the effect of thermal treatment in vacuum on the optical transmission of 6H-SiC samples with a porous layer on the Si face in the visible and near infrared spectral range. An analysis of changes in the absorption coefficient shows that the process of graphitization begins at a temperature below 70°C. 相似文献
52.
A discussion about the quantum mechanical effects on noise properties of ballistic (phase-coherent) nanoscale devices is presented. It is shown that quantum noise can be understood in terms of quantum trajectories. This interpretation provides a simple and intuitive explanation of the origin of quantum noise that can be very salutary for nanoelectronic engineers. In particular, an injection model is presented that, coupled with a standard Monte Carlo algorithm, provides an accurate modeling of quantum noise. As a test, the standard results of noise in tunneling junction devices are reproduced within this approach. 相似文献
53.
High-efficiency LEDs of 1.6–2.4 µm spectral range for medical diagnostics and environment monitoring
N. D. Stoyanov B. E. Zhurtanov A. P. Astakhova A. N. Imenkov Yu. P. Yakovlev 《Semiconductors》2003,37(8):971-984
High efficient LED structures covering the spectral range of 1.6–2.4 μm have been developed on the basis of GaSb and its solid
solutions. The electroluminescent characteristics and their temperature and current dependences have been studied. The radiative
and nonradiative recombination mechanisms and their effect on the quantum efficiency have been investigated. A quantum efficiency
of 40–60% has been obtained in the quasi-steady mode at room temperature. A short-pulse optical power of 170 mW was reached.
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 8, 2003, pp. 996–1009.
Original Russian Text Copyright ? 2003 by Stoyanov, Zhurtanov, Astakhova, Imenkov, Yakovlev. 相似文献
54.
55.
Several kinds of waveguide components such as curved waveguide bends, arbitrary angle waveguide bends and T-junctions have been analyzed with boundary element method in this paper. A new discretization method for the boundary element method to solve the waveguide discontinuities has been given. The numerical results obtained agree well with the experimental results and numerical results in other literature. Especially, the scattering characteristics of Forded E-, H-plane T-junctions in 3mm band have been analyzed using boundary element method and the calculation results are presented. 相似文献
56.
H. L. Du S. R. Rose Z. D. Xiang P. K. Datta X. Y. Li 《Materialwissenschaft und Werkstofftechnik》2003,34(4):421-426
The oxidation/sulphidation behaviour of a Ti‐46.7Al‐1.9W‐0.5Si alloy with a TiAl3 diffusion coating was studied in an environment of H2/H2S/H2O at 850oC. The kinetic results demonstrate that the TiAl3 coating significantly increased the high temperature corrosion resistance of Ti‐46.7Al‐1.9W‐0.5Si. The SEM, EDX, XRD and TEM analysis reveals that the formation of an Al2O3 scale on the surface of the TiAl3‐coated sample was responsible for the enhancement of the corroison resistance. The Ti‐46.7Al‐1.9W‐0.5Si alloy was also modified by Nb ion implantation. The Nb ion implanted and as received sampels were subjected to cyclic oxidation in an open air at 800oC. The Nb ion implantation not only increased the oxidation resistance but also substantially improved the adhesion of scale to the substrate. 相似文献
57.
Online Raman spectra, obtained at different points along the spin line during pilot‐scale nonisothermal melt spinning of high density polyethylene (HDPE) fibers, are presented for the first time. The fraction of the crystalline phase corresponding to each spectrum was determined from the normalized integrated intensity of the 1418 cm?1 Raman band. It is well established that this band represents the orthorhombic crystalline phase in polyethylene. The estimates of percent crystallinity obtained from decomposition of the Raman spectrum were compared with the percent crystallinity from differential scanning calorimetry (DSC) measurements. It is concluded that online Raman spectroscopy can be successfully used to monitor the development of crystallinity in HDPE fibers as a function of distance from the spinneret. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 88: 545–549, 2003 相似文献
58.
In order to complement subjective evaluation of the quality of segmentation masks, this paper introduces a procedure for automatically assessing this quality. Algorithmically computed figures of merit are proposed. Assuming the existence of a perfect reference mask (ground truth), generated manually or with a reliable procedure over a test set, these figures of merit take into account visually desirable properties of a segmentation mask in order to provide the user with metrics that best quantify the spatial and temporal accuracy of the segmentation masks. For the sake of easy interpretation, results are presented on a peaked signal-to-noise ratio-like logarithmic scale. 相似文献
59.
A. I. D’Souza M. G. Stapelbroek P. N. Dolan P. S. Wijewarnasuriya R. E. DeWames D. S. Smith J. C. Ehlert 《Journal of Electronic Materials》2003,32(7):633-638
The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit
sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms
of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of
1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The
1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors
at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density
in the mid-10−15A/Hz1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth
in(f = 1 Hz, Vd = −60 mV, and Δf = 1 Hz) to dark current Id(Vd = −60 mV) was αSW-d = in/Id ∼ 1 × 10−3. The SWIR detectors measured at 0 mV under illuminated conditions had median αSW-P = in/Iph ∼ 7 × 10−6. For mid-wave infrared (MWIR) detectors, αMW-d = in/Id ∼ 2 × 10−4, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under
illuminated conditions at 98 K and −60 mV bias resulted in αMW-P = in/Iph = 4.16 ± 1.69 × 10−6. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias,
with a noise-current-to-photocurrent ratio, αMW-P, in the mid 10−6 range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, αLW-d = in/Id ∼ 6 × 10−6, for the best performers. The majority of the LWIR detectors exhibited αLW-d on the order of 2 × 10−5. The photo-induced 1/f noise had αLW-P = in/Iph ∼ 5 × 10−6. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if
this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps
are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as
a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular
bias. The 1/f noise was not a direct function of the applied bias. 相似文献
60.
Shi-Jin Ding Hang Hu Lim H.F. Kim S.J. Yu X.F. Chunxiang Zhu Li M.F. Byung Jin Cho Chan D.S.H. Rustagi S.C. Yu M.B. Chin A. Dim-Lee Kwong 《Electron Device Letters, IEEE》2003,24(12):730-732
For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications. 相似文献