咪唑在氮气中的热稳定性及其应用

研究了预焊剂咪唑在氮气中的热稳定必一类在时延变参数并在ＰＣＢ的焊接工艺中首次使用Ｎ２作为热处理的氮氛。结果表明：改革后的工艺操作简便，咪唑预焊抗氧化性能及可焊性能优良，符合ＰＣＢ可焊性要求，值得大力推广。     

Carrier dynamics in high-speed (f/sub -3 dB/>40 GHz) 0.98-/spl mu/m multiquantum-well tunneling injection lasers determined from electrical impedance measurements

Carrier capture times in InGaAs-AlAs-GaAs 0.98-/spl mu/m multiquantum-well tunneling injection lasers with f/sub -3 dB//spl sim/43-48 GHz have been determined from analysis of high frequency electrical impedance measurements. The capture times range from 14 ps, at biases around threshold, to about 1 ps, at 50-mA bias. The small capture times agree well with tunneling times obtained directly from pump-probe measurements. The impedance measurements also suggest that the carrier lifetime in the well is much less than the escape time from the well, consistent with the cold carrier distribution associated with a tunneling injection mechanism.     

Dependence of the linewidth enhancement factor on the number of compressively strained quantum well in lasers

We have systematically studied the well number dependence of the linewidth enhancement factor in strained quantum-well (QW) lasers and have demonstrated experimentally that the linewidth enhancement factor can be reduced from /spl sim/9.4 to /spl sim/2.0 by increasing the number of compressively strained QW's from 2 to 8. This behavior is primarily due to an increase in the differential gain with the number of QW's.     

Chirping of an MMI-PHASAR demultiplexer for application in multiwavelength lasers

We report the first chirped multimode interference-based phased-array (MMI-PHASAR) for application in multi-wavelength lasers (MWLs). To avoid wavelength ambiguity in MWLs, undesired orders are suppressed by chirping the array of arms in the demultiplexer. Simulations show that a suppression of adjacent orders of more than 2 dB can be achieved. A 1/spl times/5 MMI-PHASAR has been realized in which the effect of the chirping is clearly visible according to the simulations.     

高功率二极管泵浦固体激光技术和应用前景的分析

文章对高功率二极管泵浦固体激光器的若干关键技术，包括激光二极管和增益介质，泵浦，耦合和冷却技术，以及光学谐振腔等作了详细的分析。     

Application of multi-domain decomposition method to solve EMCproblem on an aeroplane

The authors describe a multi-domain decomposition method using an FVTD technique for the resolution of an electromagnetic problem on vehicles composed of several volumes. In particular, they evaluate the current on a cable inside the volume of an aeroplane. The results obtained show an important gain in time compared to a complete FVTD method     

H.26L性能分析与算法优化

在相同的码率控制策略的最优参数配置下，对H．26L，MPGE－4 ASP校验模型系统进行计算机仿真，实验表明，对于CIF和QCIF格式的图像，在压缩效率上H．26L要高于MPGE－4 ASP。相同峰值信噪比条件下，H．26L目标码率约为MPEG－4 ASP的1／3－1／5，然而H．26L的运算复杂也远高于MPEG－4 ASP。本文采用整像素和亚像素运动估值的快速算法，使运算复杂度的约降低到原来的1／3。     

提高激光三角法测量精度的新方法

激光三角法是一种几何测量的重要方法,目前已广泛用于测量位移和三维面形,但这测量系统的测量精度不高,一个主要的问题就是光源光强不稳定;本文提出用光学双稳装置来稳定激光光泊的光强,并用于测量金属板材,实验结果：将光学双稳装置用于激光三角法使系统的测量精度大大提高。     

Technology trends toward a system-in-a-module in power electronics

Currently, assemblies of power semiconductor switches and their associated drive circuitry are available in modules. From a few 100 watts downward, one finds silicon monolithic technology as the integration vehicle, while upward into the multi-kilowatt range, mixed mode module construction is used. This incorporates monolithic, hybrid, surface mount and wirebond technology. However, a close examination of the applications in motor drives and power supplies indicates that there has been no dramatic volume reduction of the subsystem. The power semiconductor modules have shrunk the power switching part of the converter, but the bulk of the subsystem volume still comprises the associated control, sensing, electromagnetic power passives and interconnect structures. The paper addresses the improvement of power processing technology through advanced integration of power electronics. The goal of a subsystem in a module necessitates this advanced integration. The central philosophy of this technology development research is to advance the state of the art by providing the concept of integrated power electronics modules (IPEMs). The technology underpinning such an IPEM approach is discussed. The fundamental functions in electronic power processing, the materials, processes and integration approaches and future concepts are explained.     

InGaP/GaAs0.94Sb0.06/GaAs doubleheterojunction bipolar transistor

A novel InGaP/GaAs_0.94Sb_0.06/GaAs double heterojunction bipolar transistor is presented. It features the use of fully strained pseudomorphic GaAs_0.94Sb_0.06 as the base layer and an InGaP layer as the emitter, which both eliminate misfit dislocations and current blocking, and increase the valence band discontinuity at the InGaP/GaAsSb interface. The device demonstrates a high current gain and a low turn-on voltage