In the present paper, we prepared various kinds of aluminium nitride (AlN) nanostructures utilizing chemical vapor deposition method at atmospheric pressure. Different nanostructures including flower, rod and film were obtained on bare silicon substrates by controlling the growth temperature between 650 and 800 °C. The formation mechanism of these nanostructures is related to vapor–solid process and Ehrlich–Schwoebel barrier. The crystalline phase and morphologies of the as-prepared AlN samples are investigated systematically. Their microstructures are observed by the scanning electron microscope. The X-ray diffraction results demonstrate that the AlN samples exhibit pure phase and grow preferentially along the c-axis. The Raman examination shows there is a strong stress at the interface between the AlN nanostructures and the silicon substrate. The photoluminescence properties indicate that AlN nanostructures possess a broad luminescence band, which can be divided into two subbands by Gaussian fitting, and they are ascribed to nitrogen vacancy as well as the oxygen impurity. 相似文献
Diphenyl disulfide (PhSSPh), a typical boryl monosulfide (diiPr‐Imd‐BH2SPh) and a typical boryl bis‐sulfide [diMe‐Imd‐BH(SPh)2] all serve as both initiators and precatalysts in the reduction of alkyl and aryl halides by readily available 1,3‐dimethylimidazol‐2‐ylidene⋅borane (diMe‐Imd‐BH3). The reactions are suggested to occur by a polarity reverse catalysis mechanism where in situ generated thiophenol is the active catalyst.
