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1.
Electromigration reliability of interconnect under bidirectional current stress has been studied in a wide frequency range (mHz to 200 MHz). Experimental results show that the AC lifetime rises with the stress current frequency. The current density exponent and the activation energy of AC lifetime are found to be twice that of DC lifetime. Pure AC current stress failure at extremely high current density is believed to result from thermal migration of metal at hot/cold transition points 相似文献
2.
In this paper, we investigate the problem of determining the optimal bandwidth allocation for a Dynamic Bandwidth Allocation Scheme (DBAS). The objective is to minimize the total amount of bandwidth required to satisfy the Quality of Service (QoS) requirements of all traffic streams. It is shown that when the performance functions satisfy a certain number of conditions, there exists a unique optimal bandwidth allocation such that, for each traffic stream, either its QoS is just satisfied or its QoS is over-satisfied and it is allocated zero bandwidth. Such an allocation is said to be efficient. It is also shown that there exists a unique efficient allocation in the entire feasible region. An iterative algorithm is developed to compute the efficient allocation employing its special properties. Numerical examples are presented to demonstrate how the algorithm works. Future extensions of this work are also discussed.Partially supported by NSERC of Canada through grants OGP14020 and STRIN-200. 相似文献
3.
4.
Fanggao Chang Tao Li Yongxia Ge Zhenping Chen Zhongshi Liu Xiping Jing 《Journal of Materials Science》2007,42(17):7109-7115
DC resistivity, dielectric constant, dielectric loss and positron annihilation spectra of (Ba1−x
Ho
x
)TiO3 ceramics have been measured as a function of holmium concentration x. It has been found that the DC resistivity of (Ba1−x
Ho
x
)TiO3 is strongly dependent on the Ho content: it decreases three orders of magnitude and reaches a minimum at x = 0.4%. Doping with 0.6% holmium increases the permittivity of BaTiO3 by approximately three times (from ∼1,300 to ∼4,000), with only a slight increase in the corresponding dielectric loss. The
local electron density and defect concentration estimated using positron annihilation technique conforms well to the features
found in the dielectric and resistivity measurements. The results have been discussed in terms of a mixed compensation model. 相似文献
5.
Haiquan Guo Shiquan Tao 《IEEE sensors journal》2007,7(3):323-328
Palladium-doped silica nanocomposites were synthesized via a sol-gel technique combined with a template of Triton X-100 micelle. The freshly prepared sol sample of Pd-doped silica nanocomposites was investigated by TEM. Determined from the TEM image, the sizes of the Pd nanoparticles are narrowly distributed, which are around 30 nm in diameter. The prepared sol solution of the sample was injected into a Tygon Microbore Autoanalysis tubing. After 14 days gelatinization, a transparent porous optical fiber was obtained. The response of the fiber to hydrogen gas was tested by using a fiber-optic spectrometric method. The palladium-doped silica nanocomposite fiber is sensitive upon exposure to hydrogen gas and the response is reversible. This palladium-doped silica nanocomposite fiber can be applied as a new kind of hydrogen gas sensor 相似文献
6.
7.
石油系油浆与煤系闪蒸油的焦化性能——I.热解条件的影响 总被引:3,自引:2,他引:1
通过偏光显微镜观察了石油系油浆(LH)与煤系闪蒸油(SN)焦化后所得焦块的光学结构。结果表明,在较宽条件下两种原料单独焦化均得不到取向度高的流线型结构。将两种原料以一定比例混合后先热解丙焦化所得焦块的光学结构明显好于二者混合后直接焦化所得焦块的光学结构,其中LH和SN以3:2的重量比混合后在440℃、1MPa下热解3.5h然后再在530℃、1MPa下焦化8h所得焦块为具有较高取向度的流线型结构,适合于作为针状焦的起始原料。 相似文献
8.
为使北京谱仪端盖族射计数器更好地工作在自猝灭流光SQS模式下,提高其能量分辨以及线性等指标,用Ar,CO2,Lsobutane三元工作气体对探测器的工作性能进行了仔细研究,找出了一适合于主雇地数器的工作气体,此外,还研究了异丁的纯度对探测器性能的影响。 相似文献
9.
辐射制备缓释抗癌药阿糖胞苷的研究 总被引:1,自引:0,他引:1
报告了甲基丙烯酸酯类在室温下进行辐射聚合制备缓释抗癌药阿糖胞苷(Ara-C)的研究结果。结果表明,不仅亲水性单体,而且疏水性单体(包括MMA、EMA和BMA等)都可用于辐射固化。加入到亲水性基质中的疏水性单体可以延缓药物的离体释放,其顺序是MMA<EMA<BMA,央MMA-HEMA共聚物中,Ara-C释放率随着基质中的MMA含量增加而降低。药物的离体释放还受许多困素的控制,结果显示:药物释放量随着 相似文献
10.
Y. M. Tao J. Nin G. Y. Delisle 《Journal of Infrared, Millimeter and Terahertz Waves》1995,16(10):1769-1772
GaAs Gunn diodes were fabricated for pulse source application at 8 mm wave band and operated with pulsewidths of 0.05 to 2.0 microseconds and duty cycles of 0.001 to 0.01. Peak pulse output power levels of 0.8–1.2W are achieved and the maximum available power is 1.6W with the highest efficiency of 6.5 percent. A simple and compact pulsed power combiner is also given in this paper. 相似文献