Very high-order microring resonator filters for WDM applications

High-order microring resonators having from 1 to 11 coupled cavities are demonstrated. These filters exhibit low loss, flat tops, and out-of-band rejection ratios that can exceed 80 dB. They achieve performance that is suitable for commercial applications.     

Long-term progression in chronic manganism: ten years of follow-up

We studied the long-term clinical course of five patients with chronic manganese intoxication. The mean scores of the King's College Hospital Rating Scale for Parkinson's disease increased from 15.0 +/- 4.2 in 1987 to 28.3 +/- 6.70 in 1991 and then to 38.1 +/- 12.9 in 1995. The deterioration was most prominent in gait, rigidity, speed of foot tapping, and writing. Tissue concentrations of manganese in blood, urine, scalp hair, and pubic hair returned to normal. Follow-up MRIs did not show paramagnetic high-signal intensity on T1-weighted images. The data indicate that clinical progression in patients with manganese parkinsonism continues even 10 years after cessation of exposure.     

大型离心复合球墨铸铁轧辊的生产

简述了我公司为舞阳铜厂试制４２００ｍｍ厚板轧机离心复合球墨铸铁轧辊的性能要求、内外层双重金属铸造工艺参数的选择及整个铸造生产工艺过程。     

High-transconductance n-type Si/SiGe modulation-doped field-effecttransistors

The authors report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared using ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm²/V-s and 2.5×10¹² (1.5×10¹² ) cm^-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors     

Hg_（1－x）Cd_xTe的扫描光致发光研究

用傅里叶变换红外扫描光致发光方法研究了Ｈｇ１－ｘＣｄｘＴｅ体单晶样品，该方法可直接得到ＨｇＣｄＴｅ晶片组分的二维平面分布，并可得到辐射复合在复合机制中所占比重的平面分布，以及晶体中非平衡载流子寿命的分布     

ZrO_2与40Cr钢钎焊中的缓冲层

本试验研究了ＺｒＯ２与４０Ｃｒ钢在加入缓冲层前后的钎焊连接，结果表明：插入缓冲层Ｃｕ和Ｔｉ可以提高接头强度。对每一种缓冲层，存在一最佳厚度，对应的钎焊强度最大。此最佳厚度对Ｃｕ为０．４ｍｍ左右，对Ｔｉ为１ｍｍ左右。作者认为这是由缓冲层的力学性能和热膨胀系数对残余应力释放产生的两种相反影响而造成的。钎焊时，缓冲层Ｃｕ和Ｔｉ向钎料中均有程度不同的溶解，但不影响钎料对ＺｒＯ２的浸润和反应结合。ＺｒＯ２－４０Ｃｒ钢连接的所有接头均断在陶瓷的近缝区，其断裂方式有三种。