Low‐Power 512‐Bit EEPROM Designed for UHF RFID Tag Chip

In this paper, the design of a low‐power 512‐bit synchronous EEPROM for a passive UHF RFID tag chip is presented. We apply low‐power schemes, such as dual power supply voltage (VDD=1.5 V and VDDP=2.5 V), clocked inverter sensing, voltage‐up converter, I/O interface, and Dickson charge pump using Schottky diode. An EEPROM is fabricated with the 0.25 μm EEPROM process. Power dissipation is 32.78 μW in the read cycle and 78.05 μW in the write cycle. The layout size is 449.3 μm × 480.67 μm.     

Inverted Staggered Poly-Si Thin-Film Transistor With Planarized SOG Gate Insulator

In this letter, we have studied the inverted staggered thin-film transistor (TFT) using a spin-on-glass (SOG) gate insulator and a low-temperature polycrystalline silicon (poly-Si) by Ni-mediated crystallization of amorphous silicon. The p-channel poly-Si TFT exhibited a field-effect mobility of 48.2 cm²/V ldr s, a threshold voltage of -4.2 V, a gate-voltage swing of 1.2 V/dec, and a minimum off-current of < 4 times 10^-13A/ mum at V_ds = -0.1 V. Therefore, the gate planarization technology by SOG can be applicable to low-cost large-area poly-Si active-matrix displays.     

Modeling subjectively perceived annoyance of H.264/AVC video as a function of perceived artifact strength

This paper is concerned with the subjective perception of video coding artifacts in H.264/AVC encoded and decoded video. Our objective is to model the perceived annoyance of such low bit rate video sequences as a function of perceived artifact strength. We introduce a new method for determining this function and apply it to the data from two psychophysical experiments. Both experiments produced numerical judgments of the subjectively perceived annoyance of artifact combinations and the perceived strength of the respective coding artifacts. Our method produces a discrete multi-dimensional representation of the relationships in the data from which the function relating annoyance to artifact strength is derived. The method is applied to the data of the first experiment and the resulting function is shown to describe the data from the second experiment as well.     

Stable single-frequency fiber ring laser for 25-GHz ITU-T grids utilizing saturable absorber filter

A stable single-frequency fiber ring laser is proposed that operates in a single mode for more than an hour by incorporating unpumped erbium-doped fiber (EDF) as a saturable absorber filter and optimizing the length of EDF used as gain medium. This laser can be continuously tuned to 25-GHz spacing that precisely matches the ITU-T grids by temperature control of etalon filter. This laser had a signal-to-source spontaneous emission ratio higher than 70 dB, and lasing frequencies of 361 channels was matched to ITU-T grids with excellent flatness. Frequency offset from the ITU-T grid was less than 0.14 GHz. The linewidth and the relative intensity noise value was less than 1.3 kHz and 130 dB/Hz (above 250 kHz), respectively.     

Self‐Assembled Room Temperature Multiferroic BiFeO3‐LiFe5O8 Nanocomposites

Multiferroic materials have driven significant research interest due to their promising technological potential. Developing new room‐temperature multiferroics and understanding their fundamental properties are important to reveal unanticipated physical phenomena and potential applications. Here, a new room temperature multiferroic nanocomposite comprised of an ordered ferrimagnetic spinel α‐LiFe₅O₈ (LFO) and a ferroelectric perovskite BiFeO₃ (BFO) is presented. It is observed that lithium (Li)‐doping in BFO favors the formation of LFO spinel as a secondary phase during the synthesis of Li_xBi_1?xFeO₃ ceramics. Multimodal functional and chemical imaging methods are used to map the relationship between doping‐induced phase separation and local ferroic properties in both the BFO‐LFO composite ceramics and self‐assembled nanocomposite thin films. The energetics of phase separation in Li doped BFO and the formation of BFO‐LFO composites are supported by first principles calculations. These findings shed light on Li's role in the formation of a functionally important room temperature multiferroic and open a new approach in the synthesis of light element doped nanocomposites for future energy, sensing, and memory applications.     

A Multi‐Functional Highly Efficient Upconversion Luminescent Film with an Array of Dielectric Microbeads Decorated with Metal Nanoparticles

Upconversion nanoparticles (UCNPs) have been integrated with photonic platforms to overcome the intrinsically low quantum efficiency limit of upconversion luminescence (UCL). However, platforms based on thin films lack transferability and flexibility, which hinders their broader and more practical application. A plasmonic structure is developed that works as a multi‐functional platform for flexible, transparent, and washable near‐infrared (NIR)‐to‐visible UCL films with ultra‐strong UCL intensity. The platform consists of dielectric microbeads decorated with plasmonic metal nanoparticles on an insulator/metal substrate. Distinct improvements in NIR confinement, visible light extraction, and boosted plasmonic effects for upconversion are observed. With weak NIR excitation, the UCL intensity is higher by three orders of magnitude relative to the reference platform. When the microbeads are organized in a square lattice array, the functionality of the platform can be expanded to wearable and washable UCL films. The platform can be transferred to transparent, flexible, and foldable films and still emit strong UCL with a wide viewing angle.     

Development of Metallic Hermetic Sealing for MEMS Packaging for Harsh Environment Applications

Hermetic sealing of microelectromechanical system sensors is indispensable to ensure their reliable operation and also to provide protection during fabrication. This work proposes two prospective candidates for hermetic sealing for rugged environment applications, i.e., Al-Ge and Pt-In. Al-Ge was chosen due to its compatibility with complementary metal–oxide–semiconductor technology. Pt-In possesses the highest remelting temperature among all the solder systems, which is desired for high-temperature applications in both the energy and aerospace industries. The various bonding parameters for Al-Ge eutectic bonding and Pt-In transient liquid-phase (TLP) bonding have been optimized, and their influence on the bond quality is reported. Optimization of bonding parameters has been carried out with the objective of ensuring void-free bonds. A new configuration for stacking Al-Ge thin films has been demonstrated to tackle the issue of loss of Ge prior to bonding, since native Ge oxides are soluble in deionized water. The impact of solid-state aging prior to Al-Ge eutectic bonding has been investigated. The method of tailoring the phases in the Pt-In joint is also discussed. The prospects and constraints of eutectic and TLP bonding from the hermeticity perspective are discussed in detail. Furthermore, changes in the microstructure under aging at 300°C up to 500 h and the resulting influence on the mechanical properties are presented. The overall finding of this work is that Al-Ge can achieve better mechanical and hermetic performance for high-temperature applications.     

Trellis‐Based Decoding of High‐Dimensional Block Turbo Codes

This paper introduces an efficient iterative decoding method for high‐dimensional block turbo codes. To improve the decoding performance, we modified the soft decision Viterbi decoding algorithm, which is a trellis‐based method. The iteration number can be significantly reduced in the soft output decoding process by applying multiple usage of extrinsic reliability information from all available axes and appropriately normalizing them. Our simulation results reveal that the proposed decoding process needs only about 30% of the iterations required to obtain the same performance with the conventional method at a bit error rate range of 10^?5 to 10^?6.     

A Rigorous 2D Approximation Technique for 3D Waveguide Structures for BPM Calculations

We propose a rigorous 2D approximation technique for the 3D waveguide structures; it can minimize the well‐known approximation errors of the commonly used effective index method. The main concept of the proposed technique is to compensate for the effective cladding index in the equivalent slab model of the original channel waveguide from the modal effective index calculated by the nonuniform 2D finite difference method. With simulations, we used the proposed technique to calculate the coupling characteristics of a directional coupler by the 2D beam propagation method, and the results were almost exactly the same as the results calculated by the 3D beam propagation method.     

Optimization of the Ni(P) Thickness for an Ultrathin Ni(P)-Based Surface Finish in Soldering Applications

The effects of the Ni(P) thickness δ _Ni(P) on the interfacial reaction between an Sn-3Ag-0.5Cu solder and an Au/Pd(P)/Ni(P)/Cu pad (thickness: 0.05/0.05/0.1–0.3/20 μm) and the resulting mechanical properties were investigated using scanning electron microscopy equipped with an electron backscatter diffraction system, a focused ion beam system, electron probe microanalysis, and high-speed ball shear (HSBS) testing. Regardless of δ _Ni(P), all of the Au/Pd(P)/Ni(P) surface finishes examined were completely exhausted in one reflow, exposing the Cu pad underneath the solder. Cu₆Sn₅ dissolved with various Ni contents, termed (Cu,Ni)₆Sn₅, was the dominant intermetallic compound (IMC) species at the solder/Cu interface. Additionally, Ni₂SnP and Ni₃P IMCs might form with the (Cu,Ni)₆Sn₅ in the thick Ni(P) case, i.e., δ _Ni(P) = 0.3 μm, and the two IMCs (Ni₂SnP and Ni₃P) were gradually eliminated from the interface after multiple reflows. A mass balance analysis indicated that the growth of the Ni-containing IMCs, rather than the dissolution of the metallization pad, played a key role in the Ni(P) exhaustion. The HSBS test results indicated that the mechanical strength of the solder joints was also δ _Ni(P) dependent. The combined results of the interfacial reaction and the mechanical evaluation provided the optimal δ _Ni(P) value for soldering applications.