碳纳米管的大面积合成及磁性(英文)

通过溶胶凝胶法和氢气还原法制备出Co纳米颗粒并以此作为催化剂材料,通过催化裂解苯的方法,实现了较低温度(460℃)下在Co纳米颗粒表面上合成碳纳米管。采用X射线衍射、激光喇曼光谱、场发射扫描电镜、透射电子显微镜和振动样品磁强计对所合成的碳纳米材料进行了表征。通过优化实验参数,可制备出最大产率和纯度分别为约50和98.02%(质量分数)的碳纳米管。由于铁磁性Co纳米颗粒的进入,使得整个复合物表现出比较好的磁性能。和以往以苯作为碳源合成碳纳米材料相比,此合成方案简单、成本低,且对环境无任何危害,非常适用于磁性碳纳米复合物的批量合成。     

适合铝丝键合后热老化要求的金导体浆料

研究了一种适合铝丝键合后热老化要求的金导体浆料，性能达到使用要求。在金浆中添加了少量合金元素，并选用混合型粘结剂。对金导体铝丝焊后热老化失效机理以及添加合金元素的作用，进行了讨论     

光刻用有机金浆研究

光刻有机金浆是以金的树脂酸盐为主，配以有关的贵、贱金属的树脂酸盐等制成。这种浆料分散性好，纯度高，烧制成的金膜薄而致密，覆盖率高，光刻出的图形边沿整齐，分辨率高，附着力好，可以制作出较精密的线路，对于厚薄膜难于满足的一些性能得到了实现和提高。对我国电子工业发展将会起到一定的积极作用。     

一种先进的短波实时选频和跳频通信控制器的设计和实现

本文首先论述了短波实时选频和跳频通信的工作机理；然后讨论了控制器的两个主要功能模块，并对其跳频通信技术和控制器硬件结构，软件实现方法作了较详尽的介绍；最后给出了实时选频和跳频通信系统的实际线路实验情况。     

利用神经网络的LM算法确定碳酸盐岩声波孔隙度

确定碳酸盐岩声波孔隙度是测井解释中的一个难题，传统方法是利用平均时差公式经过适当校正或使用声波、中子、密度等两种以上的测井资料求取，在具体使用中误差较大且很不方便。为此，基于Levenberg—Marquardt算法，提出一种确定碳酸盐岩声波孔隙度的神经网络方法，主要步骤包括：样本信息的预处理、网络结构的设计、采用LM算法的网络学习训练、碳酸盐岩声波孔隙度的确定。仿真实验和比较分析表明，该方法快速稳定，其结果与真实值吻合程度高。     

催化重整系列脱氯剂的研究与应用

介绍了催化重整工艺中HCl的来源与危害，讨论了脱氯剂在预加氢及重整氢和再生气脱氯中的应用及其特点。简要介绍了T型脱氯剂的概况，着重介绍了T型中三种新型脱氯剂的特点与应用。对在研究和应用过程中的脱氯剂构成、使用条件控制、催化剂中毒、氯容问题、硫影响问题、结块问题等诸多问题进行了探讨。     

Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance

We fabricated a nonvolatile Flash memory device using Ge nanocrystals (NCs) floating-gate (FG)-embedded in HfAlO high-/spl kappa/ tunneling/control oxides. Process compatibility and memory operation of the device were investigated. Results show that Ge-NC have good thermal stability in the HfAlO matrix as indicated by the negative Gibbs free energy changes for both reactions of GeO/sub 2/+Hf/spl rarr/HfO/sub 2/+Ge and 3GeO/sub 2/+4Al/spl rarr/2Al/sub 2/O/sub 3/+3Ge. This stability implies that the fabricated structure can be compatible with the standard CMOS process with the ability to sustain source-drain activation anneal temperatures. Compared with Si-NC embedded in HfO/sub 2/, Ge-NC embedded in HfAlO can provide more electron traps, thereby enlarging the memory window. It is also shown that this structure can achieve a low programming voltage of 6-7 V for fast programming, a long charge retention time of ten years maintaining a 0.7-V memory window, and good endurance characteristics of up to 10/sup 6/ rewrite cycles. This paper shows that the Ge-NC embedded in HfAlO is a promising candidate for further scaling of FG Flash memory devices.     

Tunable dual-wavelength-switching fiber grating laser

We report a tunable dual-wavelength-switching fiber grating laser by exploiting the large homogeneous gain broadening in erbium (Er)-doped fiber to suppress simultaneous lasing. Wavelength switching was accomplished through a novel design which has two overlapping cavities sharing a single-gain medium. The loss corresponding to one of the lasing wavelengths can be modulated via an optical chopper. Output power of about 6 mW and extinction ratio up to 50 dB were observed. The lasing wavelengths were tunable and switching was demonstrated for wavelength separations ranging from 0.35 to 23.5 nm