1.58-μm band gain-flattened erbium-doped fiber amplifiers forWDM transmission systems

This paper describes the amplification characteristics of gain-flattened Er³⁺-doped fiber amplifiers (EDFAs) by using 0.98-μm and 1.48-μm band pumping for a 1.58-μm band WDM signal. Silica-based Er³⁺-doped fiber (S-EDF) and fluoride-based Er ³⁺-doped fiber (F-EDF) have gain-flattened wavelength ranges from 1570 to 1600 nm and from 1565 to 1600 nm, respectively, and exhibit uniform gain characteristics with gain excursions of 0.7 and 1.0 dB, and the figure of merit of the gain flatness (gain excursion/average signal gain) of 3 and 4.3%, respectively, for an eight-channel signal in the 1.58-μm band. We show that 1.48-μm band pumping has a better quantum conversion efficiency and gain coefficient, and that 0.98-μm band pumping is effective for improving the noise characteristics. We also show that the EDFAs consisting of two cascaded amplification units pumped in the 0.98-μm and 1.48-μm bands are effective in constructing low-noise and high-gain 1.58-μm band amplifiers     

A 90-nm low-power 32-kB embedded SRAM with gate leakage suppression circuit for mobile applications

In sub-100-nm generation, gate-tunneling leakage current increases and dominates the total standby leakage current of LSIs based on decreasing gate-oxide thickness. Showing that the gate leakage current is effectively reduced by lowering the gate voltage, we propose a local dc level control (LDLC) for SRAM cell arrays and an automatic gate leakage suppression driver (AGLSD) for peripheral circuits. We designed and fabricated a 32-kB 1-port SRAM using 90-nm CMOS technology. The six-transistor SRAM cell size is 1.25 /spl mu/m/sup 2/. Evaluation shows that the standby current of 32-kB SRAM is 1.2 /spl mu/A at 1.2 V and room temperature. It is reduced to 7.5% of conventional SRAM.     

Noise limit in heterodyne Interferometer demodulator for FBG-based sensors

This paper reports the results of a recent investigation on the noise-limited performance in heterodyne interferometric demodulation systems for fiber Bragg grating strain sensors. Theoretical and simulation results are presented and compared with experimental results.     

Integrated circuit ceramic ball grid array package antenna

The recent advances in such highly integrated RF transceivers as radio system-on-chip and radio system-in-package have called for the parallel development of compact and efficient antennas. This paper addresses the development of a new type of dielectric chip antenna known as integrated circuit package antenna (ICPA) for highly integrated RF transceivers. A compact ICPA of this type has, for the first time, been designed and fabricated in a ceramic ball grid array (CBGA) package format. The novel ICPA, except economical advantage of mass production and automatic assembly, has potential benefit to the system-level board miniaturization and the system-level manufacturing facilitation. The simulated and measured antenna performance of the ICPA is presented. The effects of the different physical parts of the ICPA on the antenna performance are investigated. Results show that the ICPA achieved impedance bandwidth of 4.1% and radiation efficiency of 72%, and gain of 4.8 dBi at 5.715 GHz.     

Impact of barrier deposition process on electrical and reliability performance of Cu/CVD low k SiOCH metallization

Integration of Cu with low k dielectrics provided solution to reduce both resistance-capacitance time delay and parasitic capacitance of BEOL interconnections for 130 nm and beyond technology node. The motivation of this work is to study and improve electrical and reliability performance of two-level Cu/CVD low k SiOCH metallization from the results of diffusion barrier deposition schemes. Barrier deposition schemes are (a) high-density-plasma 250 Å Ta; (b) surface treatment of forming gas followed by high-density-plasma 250 Å Ta and (c) bi-layer of 100 Å Ta(N)/150 Å Ta. In this work, we demonstrated the superior and competency of high-density-plasma Ta deposition for Cu/CVD low k metallization and achieved excellent electrical and reliability results. Wafers fabricated with high-density-plasma Ta barrier scheme resulted in the best electrical yields, >90% for testing vehicles of dense via chains (via size=200 nm) and interspersed comb structures (width/space=200 nm/200 nm). Dielectric breakdown strength of the interspersed comb structures obtained at electric field of 0.3 MV/cm was ∼4 MV/cm.     

A low magnetic field gyrotron—gyro-magnetron

A gyrotron device operating at a substantially reduced magnetic field is proposed. The operating beam voltage is moderately low and the waveguide circuit resembles the anode block of a conventional magnetron. The dispersion relationship is given. A proof of principle experiment is suggested.     

On a reliable data communication broadcast system

This paper describes the design and implementation of a 3 KHz band HF data broadcast communication system, using a quantized frequency modulation, adaptive lattice equalizer together with forward error correcting code (FEC) to obtain a high link reliability and low error rate. A frequency diversity approach is also used in the selection of the timely best carrier frequency, and a microcomputer is implemented into the system for automatic best carrier acquisition, data transmission and clock synchronization, with minimum operator's attention. Extensive field experiments were conducted and experimental results indicate that the system can achieve, for daytime operation, a link reliability of 87–98%, with a probability of error between 10^?4 to 10^?5, depending upon data rate (50, 75bps) and FECs used. For night time operation, the link reliability reduces to from 65–93% with a probability of error down in the order of 10^?3.     

Design of microstrip hyperbolic line to match a complex impedance to a standard coaxial transmission line

Based on the solution of the Riccati equation, a hyperbolically tapered microstrip transmission line for matching a complex load to a standard coaxial cable is designed. An iterative procedure is used to yield the phase constant leading to an accurate design. A numerical example is considered. The result shows that a tremendous reduction in the size of matching components can be achieved if hyperbolic instead of uniform transmission lines are used. This is highly advantageous in the miniaturization of solid state circuits.     

First principles study of structural,electronic and optical properties of AgSbS2

In this work, we study the structural, electronic and optical properties of AgSbS₂, using full-potential linearized augmented plane wave and the pseudopotential plane wave scheme in the frame of generalized gradient approximation. Features such as the lattice constant, bulk modulus and its pressure derivative are reported. Our results suggest a phase transition from AF-IIb phase to rocksalt (B1) phase under high pressure. The calculated band structure and density of states show that the material under load has an indirect energy band gap X→(LГ) for AF-IIb phase (semiconductor) and a negative band gap W→(ГX) for B1 phase (semimetal). The optical properties are analyzed and the origin of some peaks in the spectra is discussed. Besides, the dielectric function, refractive index and extinction coefficient for radiation up to 14 eV have also been reported and discussed.     

Achieving time-of-flight mobilities for amorphous organic semiconductors in a thin film transistor configuration

We observe bulk-like hole transport in amorphous organic semiconductors in a thin film transistor (TFT) configuration. Five different organic hole transporters (HTs) commonly used in organic light-emitting diodes are investigated. When these HTs are deposited on SiO₂ gate dielectric layer, the TFT mobilities are 1–2 orders of magnitude smaller than those obtained from bulk films (3–8 μm) using time-of-flight (TOF) technique. The reduction of hole mobilities can be attributed to the interactions between the organic HTs and the polar SiO bonds on the gate dielectric layer. Detailed temperature dependence studies, employing the Gaussian disorder model, indicate that the SiO₂ gate dielectric contributes between 60 and 90 meV of energetic disorder in the charge hopping manifold. Besides SiO₂ gate dielectric, similar effects can also be observed for other polar insulators including polymeric PMMA and BCB, or HMDS-modified SiO₂. However, when a common non-polar polymer, polystyrene (PS), is employed as the dielectric layer, the dipolar energetic disorder becomes negligible. Holes effectively experience bulk-like transport on the PS gate dielectric surface. TFT mobilities extracted from all five organic HTs are in excellent agreements with TOF mobilities. The present study should have broad applications in the transport characterization of amorphous organic semiconductors.