Modeling and analysis of vias in multilayered integrated circuits

A method for modeling and analyzing vias the multilayered integrated circuits is presented. The model is based on microwave network theory. The whole via structure is divided into cascaded subnetworks, including a vertical via passing through different layers and transitions from the microstrip line and/or striplines to the vertical via. The parameters of each subnetwork are obtained from electromagnetic field analysis. Numerical results in the frequency domain and the time domain are presented. Validation of the model has been carried out by both measurements and finite-difference-time-domain (FDTD) modeling. The results show good agreement with the measurements in the frequency range for which the components of the experimental model are within specification. The time domain simulation results also agree well with the FDTD results     

Design and analysis of multidimensional Manhattan street networks

A class of doubly connected two-dimensional Manhattan street networks (MSN) is extended to a multidimensional MSN (MMSN) by a simple edge division operation. The topology is defined by three simple link equations. An approximate expression for the diameter is obtained and a simple routing scheme for three-dimensional MMSN is introduced. The proposed MMSN is shown to possess better performance parameters than the MSN topology     

R&D activities on wireless systems in China

Various wireless systems and the research preceding their practical use in China are described. The topics discussed include research establishments, research and development projects underway, challenges inherent to digital radio, and expansion opportunities afforded by satellite communications     

Seven matched bolometers for millimeter wave observations

We have fabricated a millimeter wave observation system using an array of bolometric detectors. The performance of the system depends largely on obtaining identical performance from each bolometer. We achieved a variance in the responsivity of less than 4% except for one of the seven elements. The bolometers had an electrical NEP of 1.3×10^?16 W/√Hz under radiation background loading of 30pW. We used an AC bridge readout circuit to significantly improve the stability of the array and showed that observations can be done without a mechanical beam switch. The bolometer array is now in use on the Nobeyama 45-m telescope for 150GHz observations.     

Phase locking and bandwidth in a gyrotron oscillator

For imaging radar and for satelitte and space communication (e.g. NASA's deep space network), it is important that the bandwidth be as large as possible. Here we derive a formalism for computing the phase locking bandwidth that can be achieved in a gyrotron oscillator while varying the beam voltage. As an example, a second harmonic TE_02/03 gyrotron is considered. For this device, the effective bandwidth can be increased by a factor of about 3 compared with the fixed voltage case by allowing the beam voltage to change together with the input locking signal.     

VSAT applications in Russian satellite communications

The development of satellite communications in Russia tends to their application in low-capacity voice and data systems in which earth terminals are installed directly at users premises. Low-power small terminals employed for this purpose can be classified as VSAT-type stations. This paper considers the applications of these terminals in voice and data transfer networks in Russia, their interaction with terrestrial systems, their basic technical characteristics and regulatory issues related to their use.     

InSb,GaSb, and GaInSb grown using trisdimethylaminoantimony

GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium (TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb. In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga_1-xIn_xSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between 1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all p-type with carrier concentrations of approximately 10¹⁷ cm³. Transmission electron diffraction studies indicate that the Ga_0.5In_0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This is the first report of ordering in GalnSb alloys.     

Thermal stability of sputter-deposited ZnO thin films

This paper describes our investigation on the thermal stability of sputterdeposited, piezoelectric, ZnO thin films, using x-ray photoelectron spectroscopy (XPS), capacitance-voltage (C-V) measurements of metal-insulator-semiconductor structures, and electron microprobe. We focus on out-diffusion of Zn from ZnO thin films at a high temperature (450°C) and the composition change of zinc and oxygen after high temperature annealing (up to 700°C), since these factors are related to reliability and integrated circuits-process-compatibility of the ZnO films which are being used increasingly more in microtransducers and acoustic devices. Our experiments with electron microprobe show that ZnO thin films sputter-deposited from a ZnO target in a reactive environment (i.e., with O₂) are thermally stable (up to 700°C). Additionally, the out-diffusion of zinc atoms from the ZnO films at a high temperature (450°C) is verified to be negligible using the XPS and C-V measurement techniques. The usage of a compound ZnO target, reactive environment with O₂ and optimized deposition parameters (including gas ratio and pressure, substrate temperature, target-substrate distance and rf power, etc.) is critical to deposit thermally stable, high quality ZnO films.     

Limit of optical-frequency comb generation due to materialdispersion

The limit of optical frequency comb (OFC) generation (i.e., the limit of frequency difference measurement) due to the material dispersion in the EO crystal is experimentally studied. By using a modified monolithic OFC generator, we observed the OFC spectrum, and confirmed that the envelope of the OFC around 780 nm extended to a span as wide as 16 nm (or 7.6 THz) reaching the limit of the OFC generation. We also proposed a method of stabilizing the Fabry-Perot cavity for the monolithic OFC generator     

A 1 ns, 1 W, 2.5 V, 32 Kb NTL-CMOS SRAM macro using a memory cellwith PMOS access transistors

While an ECL-CMOS SRAM can achieve both ultra high speed and high density, it consumes a lot of power and cannot be applied to low power supply voltage applications. This paper describes an NTL (Non Threshold Logic)-CMOS SRAM macro that consists of a PMOS access transistor CMOS memory cell, an NTL decoder with an on-chip voltage generator, and an automatic bit line signal voltage swing controller. A 32 Kb SRAM macro, which achieves a 1 ns access time at 2.5 V power supply and consumes a mere 1 W, has been developed on a 0.4 μm BiCMOS technology