I-slot characteristics

I-shaped slots will fit entirely on the rectangular waveguide narrow wall without wrapping onto the broad wall. This slot type is suitable for single plane scan-phased arrays where element spacing, in the scan plane, is equal to or less than one-half wavelength. The method of moments solution for the I-slot is presented. Comparison of computed results with measured data illustrates the validity of this solution. To facilitate future designs, the waveguide scattering parameters and the radiation characteristics of I-slots are included     

Low-profile helical array antenna fed from a radial waveguide

A low-profile array antenna composed of two-turn 4° pitch angle helices is designed for a frequency band of 11.7 GHz to 12.0 GHz. The feed wire of each helix is inserted into a radial waveguide through a small hole and excited by a traveling wave flowing in the transverse electromagnetic mode between the two parallel plates of the waveguide. The measured aperture efficiency shows a maximum value of 77% for a beam radiated in the normal direction and 69% for a 30° beam tilt     

Room temperature pulsed operation of 1.5 μm GaInAsP/InPvertical-cavity surface-emitting laser

Room-temperature pulsed operation of a GaInAsP/InP vertical-cavity surface-emitting laser diode (VCSELD) with an emission wavelength near 1.55 μm is reported. A double heterostructure with a 34-pair GaInAsP (λ_g=1.4 μm)/InP distributed Bragg reflector (DBR) was grown by metalorganic chemical vapor deposition (MOCVD). The measured reflectivity of the semiconductor DBR is over 97% and threshold current is 260 mA for a 40-μmφ device with a 0.88-μm-thick active layer. Threshold current density is as low as 21 kA/cm² at room temperature     

Ultrahigh-speed driverless MQW intensity modulator, and 20 Gbit/s, 100 km transmission experiments

An InGaArInAlAs MQW modulator with the low voltage of 1.5 V for 10 dB extinction ratio and 16 GHz bandwidth has been developed. This ultrahigh-speed modulator enables the modulator driver to be eliminated from the transmitter. 100 km transmission experiments have been carried out using either a 1 V peak to peak output monolithic-IC-driven modulator at 15 Gbit/s or a 2 V peak to peak output multiplexer-driven modulator at 20 Gbit/s. This is the first report on multigigabit operation of MQW modulators to the authors' knowledge.<>     

Multiwavelength InGaAs/InGaAsP strained-layer MQW-laser array usingshadow-masked growth

A simple technique for fabricating multiwavelength laser arrays is presented. The lateral variations in bandgap (or emission wavelength) between the different lasers are obtained by the use of shadow-masked growth. The shadow masked growth results in variations in thickness (and to a lesser extent, in composition) over the substrate. In combination with a multiquantum well (MQW) active region, this gives the required bandgap variations. By varying the window width in the shadow mask between 10 μm and >500 μm it was possible to obtain a wavelength span of 130 nm centered around 1.55 μm. The strained-layer-ridge MQW Fabry-Perot lasers showed a constant threshold current (around 70 mA for an 11-μm×500-μm stripe)     

Optical properties of metallic quantum wells

The authors model the optical properties of metallic quantum wells with thicknesses in the range of a few nanometers. A simple picture that includes only single electron transitions predicts strong absorption lines at frequencies associated with allowed interband transitions. This strong absorption feature can be in the near infrared for metal films several monolayers thick. The model is extended to include collective electron interactions by solving simultaneously Schroedinger's and Poisson's equations. It is found that the single electron picture does not change appreciably for frequencies above the bulk plasma frequency of the metal. For frequencies at or below the plasma frequency, however, the absorption is reduced in strength and becomes nearly featureless     

Mesa-isolated GaAs Schottky-barrier photodiodes

The design, fabrication and characterisation of GaAs Schottky-barrier photodiodes with evaporated, free-standing-metal airbridges is reported. The photodiodes were fabricated using all dry-etching techniques. Anisotropic chemically assisted ion beam etching was used to etch vertical sidewall mesas, and isotropic reactive ion etching was used to etch a lateral tunnel. A free-standing-metal airbridge created by the lateral tunnel etch results in isolation of the active area at the same time providing free-standing-metal interconnection to the contact pad.<>     

ZnSe/ZnMgSSe blue laser diode

The continuous wave operation of an ZnSe/ZnMgSSe laser diode was achieved for the first time at 77 K. Blue stimulated emission was observed at a wavelength of 447 nm and the threshold current density was 225 A/cm/sup 2/.<>     

Synchronous current control scheme with reference voltage estimation for voltage-fed PWM inverter

A new current control scheme with the reference voltage estimation for a voltage-fed pulsewidth modulated (PWM) inverter is presented. This scheme is simple and can provide smaller current error than predictive control with the same switching frequency when the load parameters are mismatched.<>     

Semi-Markov performance model of an extended token bus protocol†

In this paper we present the semi-Markov performance model of a bus protocol (IMAP—Improved token bus Multi-Access Protocol) suitable for embedded networks. IMAP is an improvement over the token bus scheme and is proposed in Sood et al. (1986). The semi-Markov model is developed by considering normal and interrupt modes of operation of IMAP. Performance of IMAP has been compared to token-bus scheme.