Multiwavelength erbium-doped fiber ring laser employing Fabry–Perot etalon inside cavity operating in room temperature

In this investigation, we propose and demonstrate a simple and cost-effective erbium-doped fiber (EDF) ring laser using a Fabry–Perot etalon inside a linear cavity and employing the accurate fiber cavity length to satisfy the least common multiple number for generating multiwavelength in C-band at room temperature. Furthermore, the center wavelength of the lasing wavelength bands can be adjusted to 1541.02, 1551.32, and 1562.03 nm, respectively. The wavelength separation in each wavelength band is 0.34 nm. Moreover, the output stability of the multiwavelength laser has also been discussed and analyzed.     

Optical Distribution and Upconversion of MB-OFDM in Ultrawide-Band-Over-Fiber Systems

Broadband radio-over-fiber networks are raising great interest for intrabuilding distribution and signal processing of ultrawide-band (UWB) signals. In this paper, a unique optical system based on an external modulator biased either in linear or nonlinear regime has been used to realize both distribution of multiband orthogonal frequency-division multiplexing (MB-OFDM) UWB signal and all-optical frequency upconversion of UWB-OFDM subband. The impact of the nonlinearity of the optical link on the MB-OFDM signal is investigated through a simulation model of the complete UWB-over-fiber system. Results have shown enhanced performance of upconverted MB-OFDM subband compared to direct transmission due to optical noise reduction. First experimental results have confirmed simulation results.     

Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

We present a junction temperature analysis of GaInN/GaN quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro-Raman spectroscopy. The temperature was measured up to a drive current of 250 mA (357 A/cm²). We find better cooling efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire substrates we find values as high as 425 K/W. Poor thermal performance in the latter is attributed to the low thermal conductivity of the sapphire. Three-dimensional finite-element simulations show good agreement with the experimental results, validating our thermal model for the design of better cooled structures.     

An Improved Thin Wire Representation for FDTD Computations

We have shown that finite-difference time-domain (FDTD) electromagnetic computations for a conductor system having a radius smaller than 0.15Deltar or larger than 0.65 Deltar (Deltar is the lateral side length of cells employed), modeled using arbitrary-radius-wire representations proposed so far with a time increment determined from the upper limit of Courant's stability condition, result in numerical instability. A primary factor causing this numerical instability is that the speed of waves propagating in the radial direction from the wire in the immediate vicinity of the wire exceeds the speed of light, and therefore, Courant's condition is not satisfied there. It is further shown that for these cases, the arbitrary-radius-wire representation can be improved by modifying the material parameters for the axial field components closest to the wire as well as those for the radial electric and circulating magnetic field components. The improved wire representation is effective in representing a wire whose radius ranges from 0.0001Deltar to 0.9Deltar.     

Design of adaptive supply voltage for sub-threshold logic based on sub-1 V bandgap reference circuit

This paper presents the design methodology to produce an adaptive supply voltage, which is used to drive digital sub-threshold logic system. Design guidelines to maintain constant speed and power via adaptive V_DD regulation are presented first. Then the paper discusses modification of sub-1 V bandgap reference (BGR) circuits using dynamic threshold MOSFET technique to provide the necessary adaptive reference voltage. Another well-known sub-1 V BGR circuit using current mode technique is also fabricated and compared. Both circuits are implemented in CMOS 0.18 μm technology. Empirical data from SPICE simulation and first order approximation techniques are used to derive analytical design models used inside BGR circuit. Measurement results of both the fabricated circuits show reference voltage output of 500 mV range; which are in good match of SPICE simulation.     

Cross-Interaction Between Au/Sn and Cu/Sn Interfacial Reactions

The cross-interaction between Sn/Cu and Sn/Au interfacial reactions in an Au/Sn/Cu sandwich structure was studied. Field-emission electron probe microanalysis (FE-EPMA) revealed that the Cu content in the three Au-Sn phases (AuSn, AuSn₂, and AuSn₄) was very low, less than 1 at.%. This means␣that Cu from the opposite Cu foil did not participate in the interfacial reaction at the Sn/Au interface. On the opposite Sn/Cu side, Au-substituted (Cu,Au)₆Sn₅ formed within the initial 1 min of reflow. With prolonged reflow, the Au content in the Au-substituted (Cu,Au)₆Sn₅ increased and it transformed into a Cu-substituted (Au,Cu)Sn phase with 25 at.% Cu after 1 min of reflow at 250°C. The x-ray diffraction (XRD) pattern confirmed the phase transformation of Au-substituted (Cu,Au)₆Sn₅ to Cu-substituted (Au,Cu)Sn phase. In addition, there was greater Au consumption in the Au/Sn/Cu sandwich joint structure than in the single Au/Sn reaction case, due to some of the Au participating in the opposite Sn/Cu interfacial reaction.     

A Semi-Theoretical Fluorescent Lamp Model for Time-Domain Transient and Steady-State Simulations

Low-pressure discharge lamps obey a set of physical laws that are different from those of high-pressure discharge lamps. In this paper, these differences are addressed. Based on a recently developed HID lamp model frame, a semi-theoretical fluorescent lamp model that can be determined by genetic algorithms and simple electrical measurements is presented. This model does not require any lamp data from lamp manufacturers. Its parameters can be determined from electrical voltage and current measurements of the lamps under AC operation at mains frequency. With the same set of parameters, the model can predict the lamp terminal characteristics accurately under low, medium and high frequency operations. Good simulation results were achieved when the lamp power was reduced to 60% of rated power and when the lamp was operated under step-up and step-down transient processes. Simulation results for different sizes of tubular and compact fluorescent lamps agree well with their experimental results. Particularly, the differences between simulation results and experimental results under rated power are less than 10%. Hence, the proposed model shows a good degree of accuracy: 1) for different types of fluorescent lamps; 2) at different operating frequencies; 3) under different dimming levels; and 4) during step-up and step-down transient processes.     

Effects of precursor aging and post-deposition treatment time on photo-assisted sol-gel derived low-dielectric constant SiO2 thin film on Si

In this paper, we have reported the results of sol-gel derived low dielectric constant SiO₂ treated with UV light as a function of precursor aging time and post-deposition UV exposure time. Filmetrics, Fourier-transform infrared, and scanning electron microscope were employed to characterize the films. Precursor aged for the longest time (4 days) has demonstrated the lowest refractive index, which can be related to reduction of dynamic dielectric constant (k_e). However, when the UV exposure time increased, the k_e value also increased. These observations have been explained in the text.     

CoWBP capping barrier layer for sub 90 nm Cu interconnects

Electroless cobalt films have been obtained by deposition using a plating bath containing two reducing agents: dimethylamineborane (DMAB) and sodium hypophosphite. This formulation allows spontaneous activation on copper followed by auto catalytic electroless plating. CoWBP and CoBP films are proposed as diffusion barriers and encapsulation layers, for copper lines and via contacts for ULSI interconnect applications. The crystalline structure, chemical composition and oxidation states of the elements were studied, as well as the electrical resistivity, topography and morphology of the films. The film composition was characterized as a function of the solution composition; the barrier properties of the films were tested and an oxidation resistance study was conducted. The films were characterized and the results show that they can be applied as capping layers for ULSI copper metallization.     

Occurrence of multiple ethyl 4-chloro-3-oxobutanoate-reducing enzymes in Candida magnoliae

Multiple ethyl 4-chloro-3-oxobutanoate (COBE)-reducing enzymes were isolated from a cell-free extract of Candida magnoliae. A NADPH-dependent COBE-reducing enzyme, distinct from the carbonyl reductase and aldehyde reductase previously reported, was purified to homogeneity using five steps, including polyethylene glycol treatment. The relative molecular mass of the enzyme was estimated to be 86,000 on high performance gel-permeation chromatography and 29,000 on sodium dodecyl sulfate polyacrylamide gel electrophoresis. The enzyme catalyzed the reduction of COBE to the corresponding (S)-alcohol with a 51% enantiomeric excess. The substrate specificity of the enzyme was different from those of the other COBE-reducing enzymes of the same strain. The partial amino acid sequences of the enzyme showed that it belongs to the short chain alcohol dehydrogenase/reductase (SDR) family. This is the first report of multiple COBE-reducing enzymes with various stereoselectivities occurring in the same strain but belonging to different (super)families.