Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

A novel guarded surface leakage test structure is used to isolate the surface and bulk leakage contributions to gate current in AlGaN/GaN HFETs. Passivation with various recipes of SiN/sub x/ always resulted in the commonly observed increase in gate leakage, which was found to be dominated by bulk leakage through the AlGaN. However, high temperature deposited SiN/sub x/ recipes gave a 1-2 orders reduction in surface leakage, whereas low temperature deposition gave an increase. Gate lag measurements were found to correlate closely with the surface leakage component, giving direct evidence that the key device problem of current slump is associated with current flow at the AlGaN surface.     

Effect of the structure of weld metal on the pitting susceptibility of welded joints of ferritic-austenitic steel

The structure of welded joints of tubes from ferritic-austenitic steel 02Kh22N5AM3 is studied by methods of metallographic, x-ray diffraction, and electron microscopic analyses. Corrosion properties of welded joints are determined in pitting tests. The results of the study are used for developing a mode of welding and heat treatment that increases substantially the corrosion resistance of the weld metal. __________ Translated from Metallovedenie i Termicheskaya Obrabotka Metallov, No. 7, pp. 32–35, July, 2006.     

Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors

In this letter, we report on the electrical characteristic and the comparison of the metal-insulator-metal (MIM) capacitors with PECVD silicon nitride (SiN) and silicon oxynitride (SiON). Both capacitors are found to exhibit low leakage and high breakdown field strength, as well as absence of dispersive behavior, good linearity, and comparable quality factor behaviors.     

Discrete Modeling and Suggested Measurement of Heat Transfer in Gas-Solids Flows

This article presents a two-dimensional transient model for gas-solids flow and heat transfer through pipes using the coupled Computational Fluid Dynamics and Discrete Element Method approach. Numerical simulations have been conducted to examine the modification of fluid thermal structure due to the presence of particles in a pneumatic transport pipeline. Modeled results have demonstrated the key role of transversal motion of rebounding particles in the pipe cross section in altering fluid temperature. Further implementation of this modeling technique in air-drying processes is discussed and possible experimental methods for the measurement of in situ particle and fluid motion and temperature profile are cited.     

Mechanical stress control in a VLSI-fabrication process: a method for obtaining the relation between stress levels and stress-induced failures

An ideal fabrication process is designed to minimize mechanical stress in semiconductor devices and to improve device reliability. Mechanical stress levels were predicted by in-house simulations supported by a thin-film database. These stress levels were correlated with stress-induced defects by TEM analysis supported by fail bit addressing on matured megabit SRAMs. Amorphous-doped silicon film with various annealing temperatures were used for the gate electrode to change the mechanical stress in devices and to get the direct relationship between predicted stress levels and stress related defects. The authors describe brief guidelines for suppressing dislocations in the small geometry shallow-trench isolation process utilizing this system. Polysilicon thickness in the W-polycide gate electrode is designed to minimize mechanical stress in the gate oxide and to suppress the gate oxide failure in probe and class tests. Moreover, critical stress generates dislocations during post source/drain ion implantation anneal obtained by a ball indentation method. This indicated that lower temperature anneal is effective in suppressing the dislocations. A two-step anneal was introduced to suppress dislocations and to enable higher ion activation.     

Low RF noise and power loss for ion-implanted Si having an improved implantation process

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.     

The hydration phase and pore structure formation in the blends of sulfoaluminate-belite cement with Portland cement

Sulfoaluminate-belite (SAB) cements are an attractive class of low-energy cements from the viewpoint of saving energy and releasing less CO₂ into the atmosphere during their production. Their hydraulic activity, however, does not match that of the ordinary Portland cement (PC) and needs improvement before they can be used on their own. However, SAB cements when blended with PC have the potential to be used effectively in traditional applications as shown by this study. Mortars made with blends of SAB cements and PC, and a cement-to-sand ratio of 1:3 by weight and a water-to-cement ratio of 0.5, indicate a superior protection against corrosion of steel to those made with blends of PC and blast-furnace slag (BFSPC). The prepared mortars were stored at 20 °C for 90 days under either a 60% relative humidity (RH)-dry air, or 100% RH-wet air conditions. With further improvement in the SAB cement quality through better understanding of their characteristics, a genuine competition between SAB/PC and BFSPC can be expected in practice.     

Effect of irradiation with low-energy Ar ions on the characteristics of the working and rear sides of single-crystal GaAs substrate

Contactless methods were used to study the characteristics of the front and rear sides of single-crystal GaAs wafers whose rear side was irradiated with low-energy Ar ions. Variations in the optical and photoelectric properties of irradiated and unirradiated sides were detected. A solitonic mechanism for the penetration of defects into the crystal bulk is suggested.