10kV配电室操作控制电源电压下降的解决措施

本提出了10kV配电室操作电压下降的现场解决方案。     

降低发电装置CO2排放的对策初探

分析了老式与新式发电装置每度电产生CO_2的量,并提出了相应的对策。     

无线技术的新领域--WUSB

无线USB(WUSB)技术是一个全新的无线传输标准.实现USB(通用串行总线)无线化以后,既可以保持有线USB的高速传输等优点,又可以去掉电缆的羁绊,给各种设备带来更大的便捷和移动性.文中首先介绍了WUSB技术的由来--UWB技术规范的标准化难以确定,然后对WUSB技术的规范标准进行了阐述,最后概述了WUSB技术的发展现状及目前和今后的技术研发重点,并对WUSB的发展前景进行了展望.     

In situ formation of multi scale reinforcing phases to improve performance of Al2O3-SiC C castables

In order to improve the physical properties and slag corrosion resistance of refractory materials for hot metal pretreatment, different contents of composite metal powders (CMP) were introduced into Al2O3-SiC-C refractory castables. The effect of CMP on the microstructure, physical properties and slag corrosion resistance of Al2O3-SiC-C refractory castables were studied. The results show that the multi scale reinforcing phases including flake crystals, rod shaped fibers, filamentous fibers and whiskers are in situ formed in the samples with addition of CMP, which result to the improvement of the cold modulus of rupture and cold crushing strength. When the addition of CMP is 6 wt.%, the high temperature modulus of rupture increases by 231%, the thermal shock resistance increases by 77% after thermal shock by water cooling 5 times and the percentage of the slag resistant area reduces by 37.2%.     

一种抗NLOS的TDOA定位算法

本文提出了一种抗非视线传播(Non-Line-of-Sight)干扰的TDOA定位算法。该算法采用退火与遗传算法相结合的方式，在满足给定条件的空间内搜索源点坐标值。数值仿真表明，该算法具备抗NLOS干扰的能力，与传统TDOA算法相比，该算法无需知道各基站的非视线传播干扰分布，是一种实用有效的定位算法。     

InAs quantum dot photonic crystal lasers and their temperature dependence

We report on the demonstration of optically pumped photonic crystal lasers with InAs quantum dot active regions operating at room temperature near 1310 nm. Absorbed threshold pump powers as low as 25 /spl mu/W are observed. We also extract a characteristic temperature of 17 K, which is attributed to limitations caused by surface recombination.     

Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall

In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.     

组件式GIS在密钥管理系统中的应用

本文讲述了利用组件式GIS技术,在密钥管理系统中进行GIS集成二次开发,实现设备地图技术,为密钥管理系统业务中的保密设备管理提供图形化、可视化支持,并给出了基于组件式GIS的密钥管理系统模型。     

Equivalent circuit model of on-wafer CMOS interconnects for RFICs

This paper investigates the properties of the on-wafer interconnects built in a 0.18-/spl mu/m CMOS technology for RF applications. A scalable equivalent circuit model is developed. The model parameters are extracted directly from the on-wafer measurements and formulated into empirical expressions. The expressions are in functions of the length and the width of the interconnects. The proposed model can be easily implemented into commercial RF circuit simulators. It provides a novel solution to include the frequency-variant characteristics into a circuit simulation. The silicon-verified accuracy is proved to be up to 25 GHz with an average error less than 2%. Additionally, equivalent circuit model for longer wires can be obtained by cascading smaller subsections together. The scalability of the propose model is demonstrated.     

An experimental study of an optical burst switching network based on wavelength-selective optical switches

In this article we report the system structure and test results of an experimental optical burst switching network with three edge router's and one core node. Wavelength-selective switches developed for this system and their characteristics are depicted. The implementation and performance of our new scheme for the just-in-time protocol are described. We also report experimental results of FTP and VOD services on this system. Some parameters, including traffic rate, average burst data length, and assembly time, are studied.