软件无线电及其实现技术

软件无线电是一种新兴技术，通过软件使多种业务、多种标准、多个频段与灵活的无线电系统的组合成为可重新配置和可重新编程的。介绍了软件无线电的概念及系统结构，并进一步讨论了现阶段软件无线电所面临的技术问题以及相应的实现方案。     

基于遗传优化的阈值选取方法

图像分割的关键性技术是阈值选取。在图像阈值选取中,最小误差法受目标大小和噪声影响小,对小目标仍具有好的分割效果,但运算量较大。本文利用遗传算法优化最小误差法获得最佳阈值。算法简单、快速、稳定性强,而且减少直接引用最小误差法的运算量,提高其性能。实验结果表明可减少50％左右的运算量。     

基于应用的实时网络管理

本文针对指挥信息系统实时网络管理需求，通过对现有网管系统组成、网络管理技术和功能的分析，提出指挥信息系统基于应用的实时网络管理设想。     

Cognitive amplify‐and‐forward relay networks with beamforming under primary user power constraint over Nakagami‐m fading channels

In this paper, we analyze the performance of cognitive amplify‐and‐forward (AF) relay networks with beamforming under the peak interference power constraint of the primary user (PU). We focus on the scenario that beamforming is applied at the multi‐antenna secondary transmitter and receiver. Also, the secondary relay network operates in channel state information‐assisted AF mode, and the signals undergo independent Nakagami‐m fading. In particular, closed‐form expressions for the outage probability and symbol error rate (SER) of the considered network over Nakagami‐m fading are presented. More importantly, asymptotic closed‐form expressions for the outage probability and SER are derived. These tractable closed‐form expressions for the network performance readily enable us to evaluate and examine the impact of network parameters on the system performance. Specifically, the impact of the number of antennas, the fading severity parameters, the channel mean powers, and the peak interference power is addressed. The asymptotic analysis manifests that the peak interference power constraint imposed on the secondary relay network has no effect on the diversity gain. However, the coding gain is affected by the fading parameters of the links from the primary receiver to the secondary relay network. Copyright © 2012 John Wiley & Sons, Ltd.     

3D Localization for Launch Vehicle Using Virtual TOA and AOA of Ground Stations

Wireless Personal Communications - Generally, a ground telemetry station for a launch vehicle (LV) includes a tracking function only; therefore, position measurements for LV depend on received...     

A novel charge-pumping method for extracting the lateraldistributions of interface-trap and effective oxide-trapped chargedensities in MOSFET devices

A novel charge-pumping method using dc source/drain biases and specified gate waveforms is proposed to extract the lateral distributions of interface-trap and effective oxide-trapped charge densities. The surface potential redistribution due to the oxide-trapped charges is treated by an iteration process in order to accurately determine their lateral distributions. The proposed novel method is feasible for accurately extracting the distributions of interface-trap and effective oxide-trapped charge densities generated by the hot-carrier stress and can be further used to predict the device lifetime     

Influence of quantum capture and tunneling mechanisms on the dark current of bound-to-continuum quantum-well infrared photodetectors

We present a theoretical model for the dark current of bound-to-continuum quantum-well infrared photodetectors (QWIPs), by considering the field-induced mixing effect, tunneling rate and phonon scattering rate between bound and continuum states. Using this model, we can see clearly how these mechanisms significantly influence the Fermi levels of bound and continuum electrons, and thus, the dark current. Nonlinear temperature dependence of the dark current at low temperature is predicted and discussed in detail. The simulated dark currents exhibit good agreement with the experimental results, without use of parameter fitting techniques.     

High‐Conductivity Poly(3,4‐ethylenedioxythiophene):Poly(styrene sulfonate) Film and Its Application in Polymer Optoelectronic Devices

The conductivity of a poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film can be enhanced by more than two orders of magnitude by adding a compound with two or more polar groups, such as ethylene glycol, meso‐erythritol (1,2,3,4‐tetrahydroxybutane), or 2‐nitroenthanol, to an aqueous solution of PEDOT:PSS. The mechanism for this conductivity enhancement is studied, and a new mechanism proposed. Raman spectroscopy indicates an effect of the liquid additive on the chemical structure of the PEDOT chains, which suggests a conformational change of PEDOT chains in the film. Both coil and linear conformations or an expanded‐coil conformation of the PEDOT chains may be present in the untreated PEDOT:PSS film, and the linear or expanded‐coil conformations may become dominant in the treated PEDOT:PSS film. This conformational change results in the enhancement of charge‐carrier mobility in the film and leads to an enhanced conductivity. The high‐conductivity PEDOT:PSS film is ideal as an electrode for polymer optoelectronic devices. Polymer light‐emitting diodes and photovoltaic cells fabricated using such high‐conductivity PEDOT:PSS films as the anode exhibit a high performance, close to that obtained using indium tin oxide as the anode.     

Dual-wavelength chaos generation and synchronization in erbium-doped fiber lasers

Dual-wavelength chaos is generated in one erbium-doped fiber laser. Tunable optical filters (TOF) are used to select the wavelengths. The generation of chaos is achieved by either modulating the pump laser diode near the relaxation oscillation frequency of the fiber laser or by introducing the modulation through an electrooptic modulator built into each wavelength branch. The receiver is fabricated with identical parameters as the transmitter except for an open loop structure. By tuning the TOF in the receiver, synchronization of chaos is observed in either of the two wavelengths. Thus, it can pave the way for wavelength-division-multiplexing chaos communications.     

AlGaN-GaN double-channel HEMTs

We present the design, fabrication, and characterization of AlGaN-GaN double-channel HEMTs. Two carrier channels are formed in an AlGaN-GaN-AlGaN-GaN multilayer structure grown on a sapphire substrate. Polarization field in the lower AlGaN layer fosters formation of a second carrier channel at the lower AlGaN-GaN interface, without creating any parasitic conduction path in the AlGaN barrier layer. Unambiguous double-channel behaviors are observed at both dc and RF. Bias dependent RF small-signal characterization and parameter extraction were performed. Gain compression at a high current level was attributed to electron velocity degradation induced by interface scattering. Dynamic IV measurement was carried out to analyze large-signal behaviors of the double-channel high-electron mobility transistors. It was found that current collapse mainly occurs in the channel closer to device surface, while the lower channel suffers minimal current collapse, suggesting that trapping/detrapping of surface states is mainly responsible for current collapse. This argument is supported by RF large-signal measurement results.