基于PCI总线的高速多路数据传输卡设计

介绍了一套基于外部设备互连(PCI)总线的高速多路数据传输卡的设计,采用基于PCI内核与PCI用户逻辑相结合的新型设计方案,在顶层通过仿真来验证PCI接口以及用户逻辑设计正确与否.降低了设计的复杂程度,提高了电路的集成度和系统的性能,并根据PCI卡对外部设备驱动能力较弱的特点,在传输卡中加入了长线驱动功能,采用低电压差分信号(LVDS)技术,既降低了系统功耗,又实现长距离的计算机双向通信.     

A 0.25-/spl mu/m CMOS quad-band GSM RF transceiver using an efficient LO frequency plan

This paper describes a single-chip CMOS quad-band (850/900/1800/1900 MHz) RF transceiver for GSM/GPRS applications. It is the most important design issue to maximize resource sharing and reuse in designing the multiband transceivers. In particular, reducing the number of voltage-controlled oscillators (VCOs) required for local oscillator (LO) frequency generation is very important because the VCO and phase-locked loop (PLL) circuits occupy a relatively large area. We propose a quad-band GSM transceiver architecture that employs a direct conversion receiver and an offset PLL transmitter, which requires only one VCO/PLL to generate LO signals by using an efficient LO frequency plan. In the receive path, four separate LNAs are used for each band, and two down-conversion mixers are used, one for the low bands (850/900 MHz) and the other for the high bands (1800/1900 MHz). A receiver baseband circuit is shared for all four bands because all of their channel spaces are the same. In the transmit path, most of the building blocks of the offset PLL, including a TX VCO and IF filters, are integrated. The quad-band GSM transceiver that was implemented in 0.25-/spl mu/m CMOS technology has a size of 3.3/spl times/3.2 mm/sup 2/, including its pad area. From the experimental results, we found that the receiver provides a maximum noise figure of 2.9 dB and a minimum IIP3 of -13.2dBm for the EGSM 900 band. The transmitter shows an rms phase error of 1.4/spl deg/ and meets the GSM spectral mask specification. The prototype chip consumes 56 and 58 mA at 2.8 V in the RX and TX modes, respectively.     

Peripheral nerve injury as a complication from orthopedic operation

We report a case of pulmonary carcinosarcoma. Surgery is required for this rare mixed type, biphasic tumor. It is generally considered to be a malignant formation issuing from a single cell line but with a two-way differentiation into epithelial and conjunctive components. There is a differentiation continuum between spindle-cell carcinomas (also called monophasic sarcomatoid carcinoma) and carcinosarcoma (or biphasic sarcomatoid carcinoma) leading to debate concerning the immunohistochemical and ultrastructural features.     

Effects of ACh on the electric activity of rostral ventrolateral medullary neurons of rat in vitro

Extracellular single-unit discharges were obtained from 165 spontaneously active neurons within the region of the rostral ventrolateral medulla (RVLM) by glass microelectrode from 89 brain slices of the Sprague-Dawley rats. The units could be divided into three types: regular (61.8%), irregular (24.2%) and silent (14%). Acetylcholine (ACh, 0.1, 0.3 mumol/L) showed four kinds of effects on spontaneous discharges of RVLM neurons: excitatory, inhibitory, biphasic and non-responsive, counting respectively 41.8%, 20%, 3% and 35.2% of the neurons tested. The excitatory effect of ACh was dose-dependent. The effects, either excitatory or inhibitory, of ACh (n = 49) were mostly blocked by atropine (0.3 mumol/L, n = 42). The excitatory effect of ACh (n = 14) could be blocked mainly by selective antagonist of M1 receptor, pirenzepine (PZ, 30 nmol/L, n = 9), but not by selective antagonist of M2 receptor, methoctramine (MT) and AFDX-116. The inhibitory effect of ACh (n = 10) could be blocked mostly by M2 receptor antagonist MT (30 nmol/L, n = 7); and this inhibitory effect (n = 9) could be blocked mostly by another M2 receptor antagonist AFDX-116 (30 nmol/L, n = 6), but not by M1 receptor antagonist PZ.     

Fast optical switching in Sm/sup 3+/-doped fibers

We report an experimental investigation of the fast optical switching in a Sm/sup 3+/-doped fiber. We discovered that this fiber can effect a fast switching speed less than 5 ns. However, the required switching power is 472 W with pulsewidth 10 ns.     

快速烧结法制备连续碳化硅纤维

通过熔融纺丝，不熔化处理制得连续聚碳硅烷（ＰＣＳ）不熔化纤维，采用快速烧结方法制备出性能较好的连续ＳｉＣ纤维。探讨了气封条件的选择，以及烧结速度对ＳｉＣ纤维的组成，结构及性能的影响。结果表明，快速烧结条件下，可以实现向纤维上施加张力以及纤维的无机化转变，烧结速度加快会降低纤维的Ｃ／Ｓｉ（原子比），同时有利于提高纤维的抗拉强度和热稳定性。     

Performance analysis of an improved MMSE multiuser receiver formismatched delay channels

Motivated by the fact that time delays in a practical direct-sequence code-division multiple-access (DS-CDMA) system can never be perfectly estimated, an improved minimum-mean squared-error (MMSE)-based receiver is proposed and analyzed. Via the simple assumption of a probability distribution for the delay estimation errors, the proposed receiver can achieve a performance superior to that of the conventional MMSE (CMMSE) receiver. The performances of this improved receiver and the CMMSE receiver are compared in terms of the mean squared error (MSE), probability of error, and asymptotic multiuser efficiency (AME). As the original definition of AME does not consider mismatched channels, the behavior of three single-user receivers bearing imperfect delay estimation is also investigated. These single-user receivers are employed to define a more appropriate AME. Finally, an efficient update mechanism to accommodate dynamic channel statistics, and thus practical implementation, is proposed     

High speed p-type SiGe modulation-doped field-effect transistors

We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (f_T) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (g_m) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K