江铃铸造厂BMD造型线控制系统改造

2005年8月,江铃汽车股份有限公司江铃铸造厂对原有BMD气冲造型线的ABB控制系统进行了改造,使用效果非常理想。生产效率及设备可靠性显著提高、成本降低。其成功经验可为其他铸造厂气冲造型线控制系统的改造作为借鉴。     

精密分度装置中蜗轮副的啮合分析

对新型蜗轮剐齿面啮合进行理论分析，指出它的一些特性：齿面容易获得较高精度；接触线走向容易形成油膜；齿面诱导曲率小，可承受较大载荷，使用寿命长。     

Application of electromagnetic-assisted stamping (EMAS) technique in incremental sheet metal forming

The application of high velocity electromagnetic-assisted stamping (EMAS) technique in incremental sheet metal forming has been proposed. EMAS whose principle is based on Lorenz force is a hybrid forming process that uses both quasi-static conventional stamping technique and electromagnetic forming actuators built into sharp corners and other difficult-to-form contours to form metals. The recent push to use more artificial intelligent (AI) aluminum alloys in automobile and aircraft industries as a result of increasing demand for fuel efficient cars and aircrafts, large size vehicle panels, improved formability limit of materials and weight reduction have placed EMAS as one of the best high velocity forming technique.It is believed that the end result of this vision will lead to more cost effective land and aerospace vehicles.     

双相不锈钢腐蚀磨损机理初探

用稳态腐蚀磨损试验机研究了α＋γ双相不锈钢在６９％Ｈ３ＰＯ４介质中的腐蚀磨损行为，并与奥氏体和铁素体不锈钢对比．ＴＥＭ研究结果表明，双相不锈钢中的γ相由于磨损变形促成高密度位错网络的胞状结构得到强化而具有优秀的耐腐蚀磨损性能．     

注射成型粘结NdFeB磁体的研发进展

简述注射成型粘结NdFeB磁体的制备工艺，分析了磁粉、粘结剂、取向磁场和工艺参数对注射成型粘结NdFeB磁体磁性能的影响以及该磁体的性能状况，并概述了粘结NdFeB磁体的产业发展及其应用领域，最后提出注射成型粘结NdFeB磁体的开发重点。     

TENSILE FRACURE IN AN Al-Li ALLOY 8090

ＴＥＮＳＩＬＥＦＲＡＣＵＲＥＩＮＡＮＡｌ－ＬｉＡＬＬＯＹ８０９０￥Ｊｉａｎｇ，Ｄａｍｉｎｇ；Ｗａｎｇ，Ｙｉｎｏｎｇ；Ｈｏｎｇ，Ｂａｎｄｅ；Ｌｅｉ，Ｔｉｎｇｑｕａｎ（ＨａｒｂｉｎＩｎｓｔｉｔｕｔｅｏｆＴｅｃｈｎｏｌｏｇｙ，Ｈａｒｂｉｎ１５００８０）Ｓｕ...     

Al─Ti─C─B中间合金细化剂的研究

研究了新近开发的Ａｌ－Ｔｉ－Ｃ－Ｂ中间合金细化剂，检查了其显微组织及细化工业纯铝及含Ｚｒ铝合金的性能，并与Ａｌ－Ｔｉ－Ｂ中间合金细化剂进行了对比。结果表明：Ａｌ－Ｔｉ－Ｃ－Ｂ中间合金细化剂含有Ａｌ３Ｔｉ、ＴｉＢ２和ＴｉＣ三种第二相，它们形成尺寸细小弥散分布的多相粒子团，其细化工业纯铝晶粒的能力明显优于Ａｌ－Ｔｉ－Ｂ中间合金细化剂，并克服了Ａｌ－Ｔｉ－Ｂ中间合金细化剂易被Ｚｒ原子毒化的弱点。分析认为，Ａｌ－Ｔｉ－Ｃ－Ｂ中间合金优异的细化性能归功于多相粒子团表面凹陷处的物理化学作用     

国外小电流空气等离子弧切割技术的发展

本文就小电流空气等离子弧切割工艺的特性、切割质量、切割设备、存在问题和应用情况作了综合介绍。当工作气体含氧量为20％时,切割速度急剧增加,大大优于气割。     

酚酞示波极谱及其在痕量钌催化分析中的应用

在稀盐酸介质中酚酞于－０．５５Ｖ处产生一灵敏的单扫描示波极谱波。基于在稀盐酸介质中及１００℃下，痕量Ｒｕ（Ⅲ）对高碘酸盐氧化酚酞这一缓慢反应的强烈催化作用，用自来水冷却中止反应，采用单扫描示波极谱波研究Ｒｕ这一新的指示反应，建立检出限和测定范围分别为０．０５ｎｇ／ｍｌＲｕ的催化反应－示波极谱分析新方法，并用于实际试样分析，结果较好。     

MOCVD Growth of Doped GaAs/AlGaAs Quantum Heterostructures

The influences of growth techniques of AP-MOCVD GaAs/AlGaAs silicon-doped multi-quantum wells(MQWs), heterostructure bipolar transistors (HBTs), double barrier resonant tunneling diodes(DBRTDs) ontheir structures and performances were studied. Continuously grown MQWs, that is, no growth interruption atthe heterointerfaces, shown blue-shifted, narrower and stronger photoluminescence(PL) compared withinterruptedly grown ones.TEM examination of the interrupted interfaces revealed a bright line correspondingto the compositional fluctuation and impurity adsorption, and indicated noncommutative structures ofAlGaAs/GaAs and GaAs/AlGaAs interfaces. High performance HBTs and DBRTDs were obtained bycontinuously grown method while growth interruption caused performance degradation. It was concluded thatgrowth interruption may cause accumulation of residua1 impurities in the ambient as well as compositionalfluctuation while continuous growth at very low growth rates can overcome such problems.