Advanced semiconductor lasers

Recent research activities in the field of advanced semiconductor lasers are reviewed with emphasis on highly stable single-wavelength lasers and surface-emitting (SE) lasers for wideband lightwave communication systems and optical parallel information processing. The operational characteristics of DSM (dynamic single-mode) lasers are summarized and requirements for high-performance operation as light sources for high-speed transmission or coherent communications are described. A type of DSM laser called the distributed-reflector (DR) laser is described as an advanced DSM laser which enables high efficiency, high power, and narrow linewidth operations. Specific features and the potential of SE lasers are summarized. Research activities and remaining problems to be solved for a breakthrough in optical parallel information processing are presented. The potential of multidimensional quantum-well structures, such as QW lasers and quantum-box lasers, is discussed in terms of superior characteristics in both stationary and dynamic operations. The present fabrication technologies for realizing high-performance lasers based on multidimensional QW structures are also presented     

Design and characteristics of InGaAs/InP composite-channel HFET's

A design for composite-channel structures consisting of an InGaAs channel and an InP subchannel for use as heterostructure field-effect transistors is presented for the first time. This novel channel structure takes advantage of both the high drift velocity and low impact ionization of InP at high electric fields as well as the high electron mobility of InGaAs at low electric fields. It is shown that the doping density of the InP subchannel is the key parameter to realize the advantages of the composite channel. A very high transconductance of 1.29 S/mm and a current gain cutoff frequency of 68.7 GHz are achieved with 0.6 and 0.7 /spl mu/m gates, respectively. The average velocity of electrons in the composite channel is 2.9/spl times/10/sup 7/ cm/s. The devices have no kink phenomena in their I-V characteristics possibly due to low impact ionization in the InP subchannel.<>     

Earth‐Abundant and Durable Nanoporous Catalyst for Exhaust‐Gas Conversion

Precious metals (Pt and Pd) and rare earth elements (Ce in the form of CeO₂) are typical materials for heterogeneous exhaust‐gas catalysts in automotive systems. However, their limited resources and high market‐driven prices are principal issues in realizing the path toward a more sustainable society. In this regard, herein, a nanoporous NiCuMnO catalyst, which is both abundant and durable, is synthesized by one‐step free dealloying. The catalyst thus developed exhibits catalytic activity and durability for NO reduction and CO oxidation. Microstructure characterization indicates a distinct structural feature: catalytically active Cu/CuO regions are tangled with a stable nanoporous NiMnO network after activation. The results obtained by in situ transmission electron microscopy during NO reduction clearly capture the unique reaction‐induced self‐transformation of the nanostructure. This finding can possibly pave the way for the design of new catalysts for the conversion of exhaust gas based on the element strategy.     

Reduction of noise figure in semiconductor laser amplifiers with Ga1-xInxAs/GaInAsP/InP strained quantum wellstructures

The noise characteristics of semiconductor laser amplifiers (SLAs) in the Ga_1-xIn_xAs/GaInAsP/InP strained quantum well (QW) system are theoretically calculated and analyzed using density-matrix theory and taking into account the effects of band mixing on both the valence subbands and the transition dipole moments. The numerical results show that a reduced noise figure can be obtained in both tensile and compressively strained QW structures due to the increase in differential gain and the decrease in transparent carrier density. From a comparison among compressively strained (x=0.70), unstrained (x=0.53), and tensile strained (x=0.40) QW SLAs at a fixed carrier density and optical confinement factor, it is found that the noise figure of the tensile strained QW reaches its lowest value of 3.4 dB at average input optical power of -20 dB     

Theoretical linewidth enhancement factor α ofGa1-xInxAs/GaInAsP/InP strained-quantum-wellstructures

The linewidth enhancement factor, α, in the Ga_1-xIn_xAs/GaInAsP/InP strained-quantum-well system was calculated and analyzed using density-matrix theory taking into account the effects of band-mixing on both the valence subbands and the transition dipole moments. As a result of numerical calculation, it was found that a reduced linewidth enhancement factor of 1.1 at the gain peak wavelength can be obtained in the tensile strained-quantum-well structure for TM-mode operation. This is due to the higher differential gain and a negligible free carrier plasma effect in the TM-mode compared to that of the TE-mode operating in the compressively strained-quantum-well structure. This calculation agrees with previously reported experimental results     

Characterization of electrical properties and photosensitivity of SnS thin films prepared by the electrochemical deposition method

Using the electrochemical deposition (ECD) method, we prepared tin sulfide thin films, which are suitable for the absorption layer in solar cells because of its bandgap energy (1 eV). We first optimized pulse-form biasing for ECD by characterizing deposited samples with scanning electron microscope, Auger electron spectroscopy and X-ray diffraction measurements. Then, we investigated the electrical properties of deposited SnS thin films and the properties of contacts with several different metals. Furthermore, we observed the photoconductivity of the films by means of photoelectrochemical measurements. From these results, we confirmed that the SnS thin films show p-type conduction.     

Measurements of K-Band Antenna Patterns

Methods and results of on-board antenna pattern measurements of Medium-scale Broadcasting Satellite for Experimental Purpose (BSE) are described in this paper. The measurements were carried out by means of satellite attitude offsets about the pitch and roll axes. Measured antenna patterns at both up-and down-link frequencies (14 and 12GHz) agree with the pre-launch data in the eastwards of the patterns, while they have more gentle gain slopes in the westwards. Further, antenna pattern deformation is observed along with the change in the antenna temperature. The whole appearance of the deformation seems to be complicated, however, in the center regions of the patterns which almost covers Honshu island, the dominant behavior of the deformation looks like antenna beam shift of 0.1°to 0.2°in the east-west direction.     

A PRACTICAL METHOD FOR RECTIFYING INTERFACIAL TENSION DATA TO PREDICT THE SHAPE OF INTERFACES IN AN IMMISCIBLE LIQUID/LIQUID/GAS SYSTEM

The shape of interfaces formed by the contact of two liquid phases, immiscible with each other, and a gaseous phase can be predicted on the condition that the tension to work at each interface is known with a sufficient accuracy. In general, interfacial tension data available are not so accurate, however, as to be useful as they are in predicting the shape of interfaces, particularly when the spreading coefficient of either liquid (liquid 1) on the other (liquid 2) has a negative value of a small magnitude. Presented in this note is a simple method to rectify the interfacial tension data, with the aid of a measurement of the radius of a lens of liquid 1 of a known volume placed on the horizontal surface of liquid 2, and thereby make them usable for predicting interfacial geometries. The method is tested by applying it to benzene/water and n-pentane/water systems.     

Low-threshold-current CW operation of 1.5 ?m GaInAsP/InP bundle-integrated-guide distributed-Bragg-reflector (BIG-DBR) lasers

Low-threshold-current and high-power operation of 1.5 ?m GaInAsP/InP bundle-integrated-guide (BIG) DBR lasers were obtained. A single-mode operation temperature range of more than 70 deg was demonstrated around room temperature by shortening the active region to 100 ?m. The modulation characteristic was measured up to 2 GHz with a modulation depth of 100%. A maximum value of dynamic wavelength shift was 2 ? at 1.2 times threshold current.     

Direct computation of expected numbers of failures and repairs via integral equation approach

This paper develops a method for computing the expected number of failures and the expected number of repairs of a component in a prescribed time interval. Our method computes directly the above mentioned quantities without passing through a conventional step of calculating the unconditional failure and repair intensities over the corresponding time interval. Our method is constructed via integral equation formulation with its operator equation representation. It is shown that the expected number of failures and the expected number of repairs can be computed with the same precision of accuracy as that of the unconditional failure and repair intensities, which cannot be possible by a conventional approach.