A 20-Gb/s silicon bipolar 1:4-demultiplexer IC

This paper presents a 20-Gb/s 1:4-demultiplexer for future fiber-optic transmission systems. It uses an 0.4-μm emitter double polysilicon 21-GHz f_T Si bipolar foundry process. This is the highest data rate of a 1:4-DEMUX reported so far in any technology. The 1:4-DEMUX features a tree-type architecture with one frequency divider and a channel switch circuit. The circuit design was carefully optimized to achieve high speed and moderate power dissipation. It consumes 1.4 W with a single -4.5-V supply     

宽带隙ZnMgO的电学特性及其透明薄膜场效应晶体管

首次提出了用六方相晶体结构的宽带隙ZnMgO作为薄膜场效应晶体管（TFT）的沟道层，用立方相ZnMgO纳米晶体薄膜作为栅绝缘层，在实验中用透明的ITO导电玻璃作为衬底，通过连续沉积六方和立方相结构的纳米ZnMgO晶体薄膜，并通过光刻、电极工艺等，研制了透明的ZnO基TFT, TFT的电流开关比达到1E4，场效应迁移率为0.6cm2/(V·s).在偏压2.5MV/cm下漏电流为1E-8A.     

Study on RZ-4PAM downstream signals with duty cycles of 33% and 50% for optical access system application

4-ary pulse amplitude modulation (4PAM) signals with 33% and 50% return-to-zero (RZ) clocks are generated for passive optical network (PON). We demonstrate that RZ-4PAM signals with duty cycles of 33% and 50% after transmission over 20-km-long single mode fiber (SMF) at 10 Gbit/s can be directly detected by using one photo detector, and the original data can also be restored by one M-ary threshold detector and one 4PAM sequence decoder. The optical spectra of 33% and 50% RZ-4PAM signals are measured, and their eye-diagrams before and after transmission are also analyzed. Simulation results show that 33% and 50% RZ-4PAM downlink signals can be received effectively, and the received power values are ?15.1 dBm and ?13.8 dBm when the bit error rate (BER) is 10-6. Moreover, 33% RZ-4PAM optical signals have better reception performance than 50% RZ-4PAM optical signals.     

干法刻蚀对InAsP/InGaAsP应变多量子阱发光特性的影响

采用气态源分子束外延(GSMBE)生长了具有不同阱宽的InAsP/InGaAsP应变多量子阱,并对干法刻蚀前、干法刻蚀及湿法腐蚀不同厚度覆盖层后的多量子阱光致发光(PL)谱进行了表征.测量发现干法刻蚀量子阱覆盖层一定厚度后量子阱光致发光强度得到了明显的增强.这与干法刻蚀后量子阱覆盖层表面粗糙度变化及量子阱内部微结构变化有关.     

Engineering the Exciton Dissociation in Quantum‐Confined 2D CsPbBr3 Nanosheet Films

Recent years have witnessed a rapid development of all‐inorganic halide perovskite in optoelectronic devices. Ultrathin 2D CsPbBr₃ nanosheets (NSs) with large lateral dimensions have demonstrated exceptional photophysical properties because of their analogous exciton electronic structure to quantum wells. Despite the incredible progress on device performance, the photophysics and carrier transportation parameters of quantum‐confined CsPbBr₃ NSs are lacking, and the fundamental understanding of the exciton dissociation mechanism is far less developed. Here, a ligands rearrangement mechanism is proposed to explain why annealed NS films have an increased charge transfer rate and a decreased exciton binding energy and lifetime, prompting tunneling as a dominant way of exciton dissociation to separate photogenerated excitons between neighboring NSs. This facile but efficient method provides a new insight to manipulate perovskite nanocrystals coupling. Moreover, ultrathin 2D CsPbBr₃ NS film is demonstrated to have a enhanced absorption cross section and high carrier mobility of 77.9 cm² V^?1 s^?1, contributing to its high responsivity of 0.53 A W^?1. The photodetector has a long‐term stability up to three months, which are responsible for reliable perovskite‐based device performance.     

1.3 V supply voltage 38 GHz static frequency divider

An ultra-low supply voltage and low power dissipation fully static frequency InP SHBT divider operating at up to 38 GHz is reported. The fully differential parallel current switched configuration of D-latch maintains the speed advantages of CML circuits while allowing full functionality at a very low supply voltage. The frequency divider operates at up to 38 GHz at a single-ended input power of 0 dBm. The power dissipation of the toggled D-flip-flop is 8 mW at a power supply voltage of 1.3 V. The authors believe this is the lowest supply voltage for static frequency dividers around this frequency in any technology. This low power configuration is suitable for any digital integrated circuit.     

Si bipolar 14 Gb/s 1:4-demultiplexer IC for system applications

A 1:4-demultiplexer IC meeting the essential requirements for lightwave communication systems has been designed based on a 21 GHz f _T 0.4 μm Si bipolar process. The circuit provides features such as bit-rotation control, clock enable control, outputs aligned in time, and phase aligner for clock signals. It operates up to 14 Gb/s (14 GHz) with a phase margin of ⩾250°. The power consumption is 2 W with a -4.5 V supply. 1:16-demultiplexer operation is demonstrated on the basis of 1:4-demultiplexer IC's at 10 Gb/s     

微秒针刺延期药的研制

介绍了一种以不同配比的斯蒂芬酸铅和斯蒂芬酸钡共晶为关键组分的混合针刺延期药并用于Φ３．０ｍｍ小型针刺延期雷管中。通过试验，得出３００￣６００μｓ，６００￣１０００μｓ两档延期时间的最佳方案。     

35-GHz static and 48-GHz dynamic frequency divider ICs using0.2-μm AlGaAs/GaAs-HEMTs

Two static and two dynamic frequency dividers based on enhancement and depletion 0.2-μm gate length AlGaAs/GaAs-high electron mobility transistor (HEMT) (f_T=60 and 55 GHz) technology were designed and fabricated. High-speed operations up to 35 GHz for the static frequency dividers and 48 GHz for the dynamic dividers, respectively, have been achieved. The single-ended input and differential outputs to ground simplify many applications. The power consumption is 250 mW for the divide-by-two dividers and 350 mW for the divide-by-four dividers using two supply voltages of 4 and -2.5 V