Optimum Design for RF-to-Optical Up-Converter in Coherent Optical OFDM Systems

In this letter, we conduct analysis on the optimum design for RF-to-optical up-converter in coherent optical OFDM systems using an optical I/Q modulator. We first derive closed-form expressions for the nonlinearity in the optical I/Q modulator, represented by two-tone intermodulation products as a function of the bias point and modulation index. Additionally, we perform a numerical simulation to identify Q-penalty and the excess modulation insertion loss under various transmitter conditions. We find that in contrast to the direct-detected system, the optimal modulator bias point for the coherent system is pi, where the Q-penalty and excess loss are minimized     

La doping effects on intergrowth Bi2WO6–Bi3TiNbO9 ferroelectrics

La doping effects on intergrowth Bi₂WO₆–Bi₃TiNbO₉ ferroelectric ceramics were studied by X-ray diffraction, electron probe microanalysis and dielectric spectroscopy. It was found that the La³⁺ distribution, ferroelectric phase transition and dielectric relaxation behavior are apparently affected by La doping. With increasing La³⁺ content, the site of dopant ion varies, the grain growth of Bi₅TiNbWO₁₅ is restrained, the Curie temperature is reduced and broadened. Furthermore, two dielectric relaxation loss peaks were observed both in temperature and frequency spectra. The calculated relaxation parameters revealed the oxygen vacancy related to the relaxation process.     

氧化铝厂渣浆泵机械密封的失效形式及改进措施

本文介绍了渣浆泵机械密封的失效形式,并根据长期现场工作经验,分析了机械密封泄漏的主要原因,据此提出了改进措施,通过对动静环密封面倒角,改变密封面尺寸及载荷系数后有效地解决了由于径向跳动过大而引起的密封面刮碰擦裂的失效问题。     

借鉴英国经验完善中国土地产权流转

本文在简要介绍中、英两国土地产权制度和土地产权流转的基础上，分析了我国土地产权流转过程中出现的问题，如征地过程中的赔偿过低且不完善、国有土地拆迁补偿不公以及补偿的分配方式不公平等问题。由于英国在土地制度方面与中国的相似性，文章借鉴英国土地补偿中的补偿金与改善金相结合原则、土地使用权的租赁行为以及开发收益回馈社会的方法，为完善和健全我国的土地产权流转机制提出措施和建议。     

企业开展质量成本研究工作的思考

质量成本是指企业为保证产品质量而支出的一切费用，以及产品质量未达到规定的标准而造成的一切损失的总和。开展质量成本研究工作是企业深化质量管理和成本管理的一条有效途径。     

岩盐钻井水溶双井连通开采工艺的研究与推广

文章就全国井矿盐采区多年的开采工艺技术，进行了系统的研究与总结，并提出了岩盐钻井水溶开采双井连通的各种开采工艺及其关键技术，具有很强的适用性和推广价值。     

Hydriding and Dehydriding Characteristics of Mechanically Alloyed LaMg_(17) Ni Composite Material

Magnesiumandmagnesiumalloyshavebeenin vestigatedashydrogenstoragematerialsforseveralde cadesbecausefarmorehydrogenbyweightcanbestoredinthemthaninmostoftheothercurrentlyknownhydrogenstoragealloys .Moreover ,thehighnaturalabundanceofMg ,itslightmassandenviron mentalcompatibilitypotentiallymakemagnesiumoneofthemostprospectivecandidatesforfuturehydrogenstoragematerials .Unfortunately ,thepracticalappli cationofMganditsalloyshasbeenlimitedonlytocertainstoragedevicebecauseoftheirpoorhydriding dehydr…     

Formation of mushroom-like ZnO microcrystals through a solution calcination process

Mushroom-like ZnO microcrystals have been prepared via a solution calcination route, using Zn(NO₃)₂ as Zn source in the absence of any surfactants, templates or catalysts. This is the first example to prepare mushroom-like crystals as semiconductors, which are expected to show particular physical properties. The ZnO products were investigated by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectrum measurements. A suitable concentration of Zn(NO₃)₂ solution was important for the growth of the mushroom-like products. The reported synthetic procedure is straightforward and inexpensive, and thus can be readily adopted to produce large quantities of mushroom-like ZnO microcrystals.     

Formation and Characterization of 1.5-Monolayer Self-Assembled InAs/GaAs Quantum Dots Using Postgrowth Annealing

In this paper, we report that low-density InAs/GaAs quantum dots (QDs) can be formed by postgrowth annealing the samples with 1.5-monolayer (ML) InAs coverage, which is thinner than the critical layer thickness for the Stranski-Krastanov growth. The annealing procedure was performed immediately after the deposition of the InAs layer. The effects of annealing time and annealing temperature on the dot density, dot size, and optical characteristics of the QDs were investigated. The optimum annealing conditions to obtain low-density QDs are longer than 60 s and higher than 500degC . Meanwhile, no luminescence can be observed for the wetting-layer, which may suggest that the postgrowth annealing will make the wetting layer thinner and thus reduce the effects of wetting layer on carrier relaxation and recombination. On the other hand, we observe that a decrease of the PL intensity at the annealing conditions of 60 s and 515degC , which is possibly due to the increasing surface dislocations resulted from the In adatom desorption at higher annealing temperature.     

High Gd Concentration GaGdN Grown at Low Temperatures

GaGdN layers were grown at temperatures below 300°C by radio-frequency plasma-assisted molecular beam epitaxy on sapphire substrates. GaGdN samples with high Gd concentration as high as 12.5% were obtained by lowering the growth temperature. X-ray diffraction results showed no obvious secondary phase, which means that the phase separation can be suppressed by the growth at low temperatures. All samples, including those grown at room temperature, showed ferromagnetic characteristics. Photoluminescence emission was observed, though spectra exhibit broad and sharp luminescence bands related to many kinds of defects. It is suggested that electrons coming from defects, especially, nitrogen vacancy, stabilize ferromagnetism, and that the carrier-induced ferromagnetism occurs in the low-temperature-growth GaGdN.