Hyperdynamic circulation of cirrhotic rats: role of substance P and its relationship to nitric oxide

BACKGROUND: It has been suggested that excessive formation of nitric oxide (NO) is responsible for the hyperdynamic circulation observed in portal hypertension. Substance P is a neuropeptide partly cleared by the liver and causes vasodilatation through the activation of the endothelial NO pathway. However, there are no previously published data concerning the plasma level of substance P in cirrhotic rats and its relationship to NO. METHODS: Plasma concentrations of substance P and nitrate/nitrite (an index of NO production) were determined in control rats and cirrhotic rats with or without ascites using an enzyme-linked immununosorbent assay and a colorimetric assay, respectively. In addition, systemic and portal hemodynamics were evaluated by a thermodilution technique and catheterization. RESULTS: Cirrhotic rats with and without ascites had a lower systemic vascular resistance (2.6 +/- 0.2 and 3.9 +/- 0.4 mmHg ml(-1) x min x 100 g body weight, respectively) and higher portal pressure (14.6 +/- 0.6 and 11.3 +/- 1.8 mmHg) than control rats (6.5 +/- 0.3 mmHg x ml(-1) x min x 100 g BW and 6.8 +/- 0.2 mmHg, respectively, P < 0.05), and cirrhotic rats with ascites had the lowest systemic vascular resistance. Plasma levels of nitrate/nitrite progressively increased in relation to the severity of liver dysfunction (control rats, 2.7 +/- 0.5 nmol/ml; cirrhotic rats without ascites, 5.6 +/- 1.3 nmol/ml; cirrhotic rats with ascites, 8.3 +/- 2.2 nmol/ml; P < 0.05). Cirrhotic rats with ascites displayed higher plasma values of substance P (57.7 +/- 5.9 pg/ml) than cirrhotic rats without ascites (37.9 +/- 3.1 pg/ml, P < 0.05) and control rats (30.1 +/- 1.0 pg/ml, P < 0.05). There was no significant difference in plasma substance P values between control rats and cirrhotic rats without ascites (P > 0.05). No correlation was found between plasma levels of substance P and nitrate/nitrite (r = 0.318, P > 0.05). CONCLUSIONS: Excessive formation of NO may be responsible, at least partly, for the hemodynamic derangements in cirrhosis. Although substance P may not participate in the initiation of a hyperdynamic circulation in cirrhosis, it may contribute to the maintenance of the hyperdynamic circulation observed in cirrhotic rats with ascites.     

我国钢铁工业发展中存在的问题及对策研究

针对全球经济一体化进程加快，以及中国加入WTO，我国钢铁工业应如何发展，剖析了我国钢铁工业存在的主要问题，分析了制约我国钢铁工业发展的重要影响因素，并在此基础上从宏观、微观的角度提出了我国钢铁工业发展的对策。     

非晶Sm5Fe74.3Nb1.5Si11.7B4.5C2.5Cu0.5合金经预退火后的晶化动力学的DTA研究

研究了非晶Sm5Fe74.3Nb1.5Si11.7B4.5C2.5Cu0.5合金经400℃，保温10min预退火后的晶化动力学。结果表明；该合金的晶化相为α-Fe固溶体和Sm2Fe17Cx金属间化合物，两相的晶化表观激活能分别为557KJ/mol和514KJ/mol，当晶化体积分数为60%时，α-Fe相的晶化激活能达极大值；Sm2Fe17Cx相晶化激活能则随其晶化体积分数的增加而逐渐减小。     

An FDTD/ray-tracing analysis method for wave penetration through inhomogeneous walls

A novel method of studying wave penetration through inhomogeneous walls using the hybrid technique based on combining finite-difference time-domain (FDTD) and ray tracing methods is presented . The FDTD method is used to analyze the transmission characteristics of inhomogeneous walls. Using the knowledge of the tangential electric and magnetic field distributions along the borders of the FDTD computation domain, rays are sent out to cover the rest of the environment so that prediction of signal coverage can be made more efficiently without compromising the accuracy. Numerical results of the method have been compared and shown to agree very well with those of measurement and those of full wave analysis. Examples have shown the inadequacy of the traditional ray tracing method in the presence of walls made of concrete blocks. However, the proposed method can accurately predict signal coverage by taking into account the scattered fields by the inhomogeneity inside the walls. The method does not add much to computational complexity. Reduction in computation time is even more significant when the incident waves can be approximated to be plane waves and the wall structure is periodic.     

Ti-23Al-14Nb-3V合金氩弧焊接头的显微组织及其力学性能

研究了预热对Ｔｉ－２３Ａｌ－１４Ｎｂ－３Ｖ合金焊接性，特别是对消除氩弧焊冷裂纹的作用以及对接头显微组织和力学性能的影响。结果表明，焊前预热可有效降低该合金的冷裂倾向。经预热处理后，焊缝区的结晶层状线消失，热影响区的硬度峰得到缓和，整个焊缝的显微硬度分布趋于均匀，但焊缝区的枝晶发生粗化，热影响区有所扩大。焊件接头的拉伸试验表明，预热可使焊缝区的接头强度系数增加，但无论预热与否，接头强度均低于母材强度，且不显示宏观塑性。     

Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO

Wet etch rates at 25°C for Zn_0.9Mg_0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min⁻¹ with HCl/H₂O (5×10⁻³−2×10⁻² M) and 120–300 nm · min⁻¹ with H₃PO₄/H₂O (5×10⁻³−2×10⁻² M). Both of these dilute mixtures exhibited diffusion-limited etching, with thermal activation energies of 2–3 kCal · mol⁻¹. By sharp contrast, the etch rates for ZnO also grown on sapphire by PLD were much slower in similar solutions, with rates of 1.2–50 nm · min⁻¹ in HCl/H₂O (0.01–1.2 M) and 12–54 nm · min⁻¹ in H₃PO₄/H₂O (0.02–0.15 M). The etching was reaction limited over the temperature range 25–75°C, with activation energies close to 6 kCal · mol⁻¹. The resulting selectivity of Zn_0.9Mg_0.1O over ZnO can be a high as ∼400 with HCl and ∼30 with H₃PO₄.     

Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors

In this letter, we report on the electrical characteristic and the comparison of the metal-insulator-metal (MIM) capacitors with PECVD silicon nitride (SiN) and silicon oxynitride (SiON). Both capacitors are found to exhibit low leakage and high breakdown field strength, as well as absence of dispersive behavior, good linearity, and comparable quality factor behaviors.     

塑料片材的分切和分切对策

随着社会生产力的不断提高,人们生活水平的飞跃上升,特别是我国加入WTO以来,国际贸易更加繁忙,塑料包装的用量得到了空前的扩大,并呈现出快速发展的趋势。同时由于它们的迅速发展,对它们的要求已越来越严。而塑料包装中除了塑料容器外,几乎是片和膜包装,如热成型制品要用到各种塑料片材;软包装制品和彩印复合要用到各类塑料膜。而在生产塑料     

Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers

Process technology of high-speed implant-apertured index-guide lateral-current-injection top dielectric-mirror quantum-well 850-nm vertical cavity surface-emitting lasers (VCSELs) has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, VCSEL resistance, and thermal analysis were investigated. Employing this technology, GaAs/AlGaAs-based 850-nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence of 2/sup 31/-1 were achieved. The bit-error rates were below 10/sup -13/. The threshold current is as low as 0.8 mA for 7-/spl mu/m-diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW were obtained.