无线车载网络MAC协议算法之性能探究

随着无线通信技术的不断发展,车载环境下无线接入(Wireless Access in Vehicular Environments, WAVE)技术越来越受到人们的关注。现今车载环境下的无线网络接入技术采用了多种协议,主要协议有IEEE 802.11p WAVE协议和IEEE 1609.4 WAVE协议。本文从两协议的协议结构、功能以及固有算法等方面进行比较分析,并提出了对IEEE 802.11p协议的算法改进研究,提高了协议的平均时延、丢包率以及吞吐量的性能。并且通过Matlab仿真表明其有效性。     

First-principles investigation of the optical properties of CuIn(SxSe1–x)2

We optimized the lattice structure of sulfur-doped CuInSe₂ using first principles. The lattice constants for CuIn(S_xSe_1–x)₂ vary linearly with x according to a(x)=–0.02828x+0.58786 nm and c(x)=–0.05692x+1.1834 nm, which agree well with experimental data. The optical properties of CuIn(S_xSe_1–x)₂ were then systematically investigated using first-principles calculations with the HSE06 functional. We present data for the complex dielectric function, refractive index, extinction coefficient, reflectivity index, absorption coefficient, and optical bandgap for CuIn(S_xSe_1–x)₂. The optical bandgap E_g obtained from the absorption coefficient is 1.07 eV for CuInSe₂ and 1.384 eV for CuInS₂. These values are very close to experimental results, indicating that first-principles calculations can yield accurate bandgap values. The optical bandgap of CuIn(S_xSe_1–x)₂ increases linearly with the sulfur concentration according to E_g=0.3139x+1.0825 eV.     

三指发射极InGaP/GaAS HBT的研制

异质结双极型晶体管(HBT)是MMIC领域中最具有竞争力的三端器件之一.本文提出了一种三指发射极HBT的设计.通过与同一版上两指发射极HBT比较,证实了该设计的工艺宽容度高、可靠性和一致性好、成品率高,并且仍然具有两指发射极HBT良好的击穿、直流和高频特性.     

含硅量及等温时间对奥贝球墨铸铁机械性能的影响

探讨了含硅量及等温时间对奥贝球铁冰冷处理前后机械性能及低温冲击韧性的影响。试验表明,随着含硅量的增加,不但冷处理前常温机械性能提高,而且冰冷处理后的机械性能及低温冲击韧性也提高。而含硅3.39％和3.68％的机械性能已趋一致,等温时间为120分钟的试样,冰冷处理前后的机械性能和低温冲击韧性均最高。     

钨系水处理剂及其缓蚀机理的研究

研究了钨系水处理剂复合配方对碳钢在含Cl~-及SO_4~(2-)水中的缓蚀作用,筛选出最佳复配方案。根据电化学测试和XPS分析结果探讨了钨系水处理剂的缓蚀机理。     

逆变式脉冲TIG焊机的研究

本文详述了逆变式脉冲TIG焊机的性能和基本工作原理,分析了系统的稳态误差,对焊接工艺性能及其特有的静外特性作了介绍,并提出了提高整机抗干扰能力和降低中频噪音的方法、措施。该焊机由于采用了中频逆变技术,使其效率和功率因数都有较大幅度的提高,不但减小了体积,减轻了重量,而且具有比传统TIG焊机更精密的控制、调节性能等。     

ZnO纳米棒的图形化生长及其场发射特性

介绍了用氢离子注入技术和阳极腐蚀方法在硼掺杂p-(100)型硅晶片上制备图形化的纳米硅(SiNC)薄膜工艺,并在这种图形化衬底上成功生长了图形化的ZnO纳米棒.场发射测试表明制备的ZnO纳米棒具有良好的场发射性能,即具有较低的开启电场和阈值电场,较高的发射点密度.     

Miniaturized Fiber-Optic Fabry-Perot Interferometer for Highly Sensitive Refractive Index Measurement

This paper presents a novel miniaturized fiber-optic Fabry-Peort interferometer （FPI） for highly sensitive refractive index measurement. This device was tested for the refractive indices of various liquids including acetone and ethanol at room temperature. The sensitivity for measurement of refractive index change of ethanol is 1138 nm/RIU at the wavelength of 1550 nm. In addition, the sensor fabrication is simple including only cleaving, splicing, and etching. The signal is stable with high visibility. Therefore, it provides a valuable tool in biological and chemical applications.     

ZnO TFT Devices Built on Glass Substrates

ZnO thin-film transistors (TFTs) were built on glass substrates. The device with a top gate configuration operates in the depletion mode. The ZnO channel was grown by metalorganic chemical vapor deposition (MOCVD) on glass at low temperature. SiO₂ was used as the gate dielectric. The TFT has an on/off ratio of ∼4.0 × 10⁴ and a channel field-effect mobility of ∼4.0 cm²/V s. The average transmittance of the ZnO film in the visible wavelength is ∼80%. To compare the characteristics of the TFTs prepared by using a poly-ZnO and epitaxial-ZnO channel, an epi-ZnO TFT with the same configuration and dimensions was made on an r-Al₂O₃ substrate. The epi-ZnO TFT shows higher field-effect mobility of ∼35 cm²/V s and on/off ratio of ∼10⁸.     

High‐Performance Organic Transistor Memory Elements with Steep Flanks of Hysteresis

High‐performance organic transistor memory elements with donor‐polymer blends as buffer layers are presented. These organic memory transistors have steep flanks of hysteresis with an ON/OFF memory ratio of up to 2 × 10⁴, and a retention time in excess of 24 h. Inexpensive materials such as poly(methyl methacrylate), ferrocene and copper phthalocyanine are used for the device fabrication, providing a convenient approach of producing organic memory transistors at low cost and high efficiency.