照相材料的稳定与保存

本文讨论了影响照相材料稳定与保存的几个因素以及为保持照相材料最佳稳定性、保存性而采取的几种有效方法。     

“镍”催化酰氯和有机锡试剂交叉偶联反应的研究

镍络合物催化酰氯与有机锡试剂交叉偶联合成有机酮的反应,其反应选择性强,反应彻底,转化率高,工艺简单。在有机锡过量的情况下,对不同催化剂的催化活性和包括投料比,反应温度,反应时间,反应溶剂等反应条件进行了考察。     

管外上升R－113流体的沸腾换热试验

详细介绍了Ｒ－１１３流体管外上升流动的沸腾换热试验，包括试验台架、流量计和温度测量的修正，以及试验数据。拟合的换热关系式为ｑ＝５２８（Ｔｗ─Ｔｓ）１．３３。     

解线性及二次型规划问题增广的神经网络

本文提出了一个解线性及二次型规划问题的神经网络模型，证明了该网络是全局稳定于平衡点，而平衡点就是线性及二次型规划问题的解，该网络的优点是能够实时获得问题的精确解，且可以同时获得带等式不式约束的对偶问题解，该网络易于电路实现。     

An efficient numerical approach, for determining the dispersioncharacteristics of dual-mode elliptical-core optical fibers

Based on vectorial formulations which combine the surface integral equation method and the finite-element method, a novel numerical approach is proposed for calculating the dispersion coefficients of dual-mode elliptical-core fibers with arbitrary refractive index profiles. By differentiating the original formulations involving the propagation constant β and the guided mode fields H_x and H_y once and twice with respect to the normalized frequency V, the new formulations for {dβ/dV, dH_x/dV, dH_y/dV} and for {d²β/dV², d² H_x/dV², d²H_y/dV² } are obtained respectively. Once {β, H_x, H_y } is solved through the eigenvalue procedure which dominates the computing time, only a few matrix manipulations are required to obtain {dβ/dV, dH_x/dV, dH_y/dV} and {d²β/dV², d²H_x/dV² , d²H_y/dV²}. Some numerical examples are examined to see the influence of different refractive index distributions with dips on the dispersions of the four nondegenerate LP ₁₁ modes for elliptical-core fibers     

A new simplified threshold-voltage model for n-MOSFETs with nonuniformly doped substrate and its application to MOSFET's miniaturization

The formulation, verification, and application of a new simplified 2-D threshold voltage model for n-MOSFETs with nonuniformly doped substrate profile are provided, in which the averaged normal field at the Si/SiO/sub 2/ interface in the active channel is quoted from a simplified solution of two-dimensional Poisson equation using the Green function technique. Starting with the expression of this average normal field, a simple threshold-voltage model for short-channel n-MOSFETs with nonuniformly doped substrate profile is explicitly expressed in terms of device structures and terminal voltages by considering parabolic source-drain boundary potentials. Moreover, the effects of the junction depth on the threshold voltage are examined in detail. It is shown that the DIBL effect cannot be completely eliminated by simply increasing the substrate doping concentration. Comparisons among developed model, 2-D numerical analysis, and experimental data have been made and the accuracy of the developed analytical model has been verified. In addition, a direct extension of our model to the case of uniformly doped substrates leads to a new constraint equation for device miniaturization.<>     

MOSFET亚阈特性分析与低温按比例缩小理论的研究

器件尺寸按比例缩小是实现超大规模集成电路的有效途径，但寄生和二级效应却将器件限在一定的水平，本文在对比分析常温与低温下小尺寸器件效应的基础上，重点研究了ＭＯＳ器件亚阈特性对器件性能及按比例缩小的影响，并根据低温工作的特点，提出了ＭＯＳ器件一种低温按比例缩小规则，该原则对低温器的优化设计，从而更大程度在提高电路与系统性能具有重要的指导意义。     

A millimeter-wave omnidirectional dielectric rod metallic gratingantenna

A new millimeter-wave omnidirectional dielectric rod metallic grating antenna is investigated theoretically and experimentally, in this paper. The radiation characteristics of the antenna are carefully investigated by a rigorous formulation for the TE₀₁-mode and TM₀₁-mode excitation in the Ka-band frequency range. Based on the analysis, an omnidirectional antenna excited by the TE₀₁ mode is designed and measured. The measured results are compared with theoretical predictions and good agreement is found. Extensive numerical results are given to establish some useful guidelines for the design of the omnidirectional antenna