Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd_0.96Zn_0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.     

Excitation mechanisms of multiple Er3+ sites in Er-implanted GaN

Site-selective photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies carried out at 6K on the ∼1540 nm ⁴I_13/2→⁴I_15/2 emissions of Er³⁺ in Er-implanted GaN have revealed the existence of four different Er³⁺ sites and associated PL spectra in this semiconductor. Three of these four sites are excited by below-gap, impurity- or defect-related absorption bands, with subsequent nonradiative energy transfer to the Er³⁺ 4f electrons; a fourth site is excited by direct Er³⁺ 4f shell absorption. PLE spectra obtained by selectively detecting Er³⁺ PL from each of the three sites pumped by broad below-gap absorption bands are compared with the PLE spectra of broad PL bands attributed to implantation damage-induced defects in the Er-implanted GaN. This comparison enables us to distinguish broad-band, below-gap optical excitation processes for Er³⁺ emission that are attributable to (1) absorption due to implantation damage-induced defects; (2) absorption due to defects or impurities characteristic of the as-grown GaN film; and (3) an Er-specific absorption band just below the band gap which may involve the formation of an Er-related isoelectronic trap. The two sites excited by impurity-or defect-related absorption bands are also strongly pumped by above-gap excitation, while the sites pumped by the Er-related trap and direct 4f shell absorption are not. This observation indicates that excitation of Er³⁺ luminescence in crystalline semiconductor hosts by either optical or electrical injection of electron-hole pairs is dominated by trap-mediated carrier capture and energy transfer processes. These trap-mediated processes may also control the thermal quenching of Er³⁺ emission in semiconductors.     

Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates

We have investigated the thermal degradation of gate oxide in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon and consequently to the gate oxide occurs upon thermal cycling processes, which results in the dielectric breakdown of the gate oxide. We also found that the Ti-diffusion is suppressed by the employment of the thin (about 5 nm) titanium nitride (TiN) diffusion barrier layer, which consequently improved the reliability characterisitics of gate oxide significantly.     

Multichannel Algorithms for Simultaneous Equalization and Interference Suppression

This paper proposes techniques for simultaneous cancellation of intersymbol and interchannel or multi-access interference (ISI and ICI) that shows up in several multi-input, multi-output (MIMO) communication channels. Correlation and kurtosis based optimization criteria are derived for multi-channel decision feedback equalizers (MC-DFE) and compared with the popular Godard algorithm (CMA) and the minimum mean-square error in a decision directed mode (MMSE-DD). The proposed adaptive algorithms are easily extended to a scenario with more than two users with the computational complexity increasing linearly with the number of inputs. Simulation results show that the algorithms converge to the global minimum in a blind environment with channels that introduce moderate distortion.     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

Still image coding based on vector quantization and fractalapproximation

In this paper, we propose a coding algorithm for still images using vector quantization (VQ) and fractal approximation, in which low-frequency components of an input image are approximated by VQ, and its residual is coded by fractal mapping. The conventional fractal coding algorithms indirectly used the gray patterns of an original image with contraction mapping, whereas the proposed fractal coding method employs an approximated and then decimated image as a domain pool and uses its gray patterns. Thus, the proposed algorithm utilizes fractal approximation without the constraint of contraction mapping. For approximation of an original image, we employ the discrete cosine transform (DCT) rather than conventional polynomial-based transforms. In addition, for variable blocksize segmentation, we use the fractal dimension of a block that represents the roughness of the gray surface of a region. Computer simulations with several test images show that the proposed method shows better performance than the conventional fractal coding methods for encoding still pictures.     

A new finite-state vector quantizer with optimized state space andderailment-free operation

A new finite-state vector quantization (FSVQ) algorithm is developed based on state space optimization and the derailment prevention requirement. The proposed derailment-free FSVQ (DF-FSVQ) achieves good performance through (i) state space reduction, which allows a practical implementation of high-order FSVQ, and (ii) derailment free state transitions. Experimental results show that our approach outperforms other known FSVQ schemes in terms of performance, system complexity, and processing speed, especially at low bit rate image coding.     

Dynamic laser control using feedback from a gain grating

We demonstrate that self-induced gain gratings can provide nonlinear optical feedback that results in single frequency selection and passive self Q-switching of a conventional linear laser cavity. An experimental Nd:YAG laser system is described that yields a temporally-smooth 20 ns pulse at 1.064 μm. In addition, we show that the feedback has phase-conjugate properties that permit “flower-like” mode formation even though the azimuthal symmetry of the cavity is broken     

Spatial retardation of carrier heating in scaled 0.1-μmn-MOSFET's using Monte Carlo simulations

A comprehensive Monte Carlo simulator is employed to investigate nonlocal carrier transport in 0.1 μm n-MOSFET's under low-voltage stress. Specifically, the role of electron-electron (e-e) interactions on hot electron injection is explored for two emerging device designs biased at a drain voltage V_d considerably less than the Si/SiO₂ injection barrier height φ_b. Simulation of both devices reveal that 1) although qV_d<φ_b, carriers can obtain energies greater than φ_b, and 2) the peak for electron injection is displaced approximately 20 nm beyond the peak in the parallel channel electric field. These phenomena constitute a spatial retardation of carrier heating that is strongly influenced by e-e interactions near the drain edge. (Virtually no injection is observed in our simulations when e-e scattering is not considered.) Simulations also show that an aggressive design based on larger dopant atoms, steeper doping gradients, and a self-aligned junction counter-doping process produces a higher peak in the channel electric field, a hotter carrier energy distribution, and a greater total electron injection rate into the oxide when compared to a more conventionally-doped design. The impact of spatially retarded carrier heating on hot-electron-induced device degradation is further examined by coupling an interface state distribution obtained from Monte Carlo simulations with a drift-diffusion simulator. Because of retarded carrier heating, the interface states are mainly generated further over the drain region where interface charge produces minimal degradation. Thus, surprisingly, both 0.1 μm n-MOSFET designs exhibit comparable drain current degradation rates     

Electromagnetic wave absorber with wide-band frequencycharacteristics using exponentially tapered ferrite

As a countermeasure of EMI or EMC, various types of electromagnetic wave absorbers are used. A wide-band design method of an electromagnetic wave absorber with using exponentially tapered ferrite, which has very wide-band frequency characteristics, is proposed and discussed. The wide-band electromagnetic wave absorber can be designed under some approximations by the theoretical model using the equivalent material constants (equivalent complex permittivity and permeability) method for the regions varying spatially in the shape of ferrite. Based on the model, wide-band electromagnetic wave absorbers with taper, which have not only excellent reflectivity frequency characteristics but also a bandwidth of 30 MHz to 2150 MHz or 2430 MHz under the tolerance limits of -20 dB reflectivity, were designed