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81.
Bismuth titanate (BiT) based composites containing silver particles are fabricated by a solution chemical process. Incorporation of silver particles does not result in unwanted reaction phase. SEM micrographs reveal fine silver particles distribute at BiT grain boundaries and into larger BiT plate-like grains. With the addition of silver, the dielectric constant increases up to ∼10 times higher than that of pure BiT ceramic, which can be attributed to the effective electric fields developed around the dispersed metal particles and the percolation effect. Additionally, the dielectric losses are significantly reduced by incorporating silver particles, and the values of BiT/Ag composites are lower than 0.5%. The dielectric properties of BiT/Ag composites are nearly frequency independent in the measured frequency range (1 kHz to 1 MHz).  相似文献   
82.
This paper proposes a new modeling approach for circuit‐field‐coupled time‐stepping electromagnetic analysis of a saturated interior permanent magnet synchronous motor (IPMSM). To predict the drive performance quickly, the proposed approach consists of a dynamic simulator based on a new analytical model of the d‐ and q‐axis magnetization characteristics (λ‐idiq‐θ). The model can take into account not only cross‐saturation but also the harmonics of the inductance distributions and EMF waveforms. The validity of the model is verified from suitable simulation results for the instantaneous current and torque waveforms of the IPMSM. The proposed analysis leads to a dramatic reduction in the computation time compared to circuit‐field‐coupled time‐stepping FEA, while maintaining analytical accuracy. The effectiveness of the proposed method is experimentally verified using a 10‐kW, 15,000‐rpm concentrated‐winding IPM motor. © 2010 Wiley Periodicals, Inc. Electr Eng Jpn, 174(1): 49–58, 2011; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/eej.21024  相似文献   
83.
Analytical models of the pin diode in a small‐current operation are not known yet. This article presents a simple analytical model of the pin diode operation with its confirmation by a numerical simulation. At the onset, carrier recombinations are not included for the sake of simplicity. The exact JF?VF characteristic could have been induced only by accounting for the Boltzmann distribution of each carrier across the junctions and the diffusion current of each minority carrier in a p‐anode or n‐cathode. Based on this new model, the modifications of hole–electron densities product (nenh) across junctions, a rough estimation of the large operational current, its carrier distributions, and the effect of carrier recombination on the carrier distribution are plainly estimated and are also compared with the simulation results. © 2009 Wiley Periodicals, Inc. Electr Eng Jpn, 167(4): 47–56, 2009; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20844  相似文献   
84.
Polytetrafluoroethylene (PTFE) is a very attractive material for various fields because of its chemical resistance, insulation properties, and hydrophobic properties. However, it is difficult to fabricate PTFE microstructures with conventional techniques such as semiconductor processes or micromachining. We have succeeded in the fabrication of high‐aspect‐ratio microfluidics parts from PTFE by direct in‐vacuum photo‐etching utilizing synchrotron radiation (SR) at energy levels from 2 to 12 keV. This paper presents an analysis of the mechanisms of the PTFE microfabrication process and describes newly discovered processing characteristics of PTFE. © 2011 Wiley Periodicals, Inc. Electr Eng Jpn, 178(4): 49–54, 2012; Published online in Wiley Online Library ( wileyonlinelibrary.com ). DOI 10.1002/eej.21152  相似文献   
85.
In this paper, CMOS‐based low‐noise amplifiers with JFET‐CMOS technology for high‐resolution sensor interface circuits are presented. A differential difference amplifier (DDA) configuration is employed to realize differential signal amplification with very high input impedance, which is required for the front‐end circuit in many sensor applications. Low‐noise JFET devices are used as input pair of the input differential stages or source‐grounded output load devices, which are dominant in the total noise floor of DDA circuits. A fully differential amplifier circuit with pure CMOS DDA and three types of JFET‐CMOS DDAs were fabricated and their noise performances were compared. The results show that the total noise floor of the JFET‐CMOS amplifier was much lower compared to that of the pure CMOS configuration. The noise‐reduction effect of JFET replacement depends on the circuit configuration. The noise reduction effect by JFET device was maximum of about − 18 dB at 2.5 Hz. JFET‐CMOS technology is very effective in improving the signal‐to‐noise ratio (SNR) of a sensor interface circuit with CMOS‐based sensing systems. © 2008 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.  相似文献   
86.
To reduce the loss due to ripple current in a multiphase current‐reversible chopper, we investigated electromagnetic coupling of an air‐core reactor. We derived the relationship between the amplitude of the ripple current, the duty factor, and the electromagnetic coupling coefficient, and used the results to estimate the effects of electromagnetic coupling in the design of a train energy storage system. We built reactors with electromagnetic coupling coefficients of 0.93 and 0.60. These reactors employed a new winding structure that provides an optimal electromagnetic coupling coefficient. The mass of the former type of reactor was increased by 4.4% over the conventional design, and that of the latter type of reactor was decreased by 17%. Finally, we tested the new reactors. When the chopper employs the former type of reactor and operates with equal‐phase switching and cumulative coupling, the loss due to ripple current is decreased by 11%. When the chopper employs the latter type of reactor and operates with shift‐phase switching and differential coupling, the loss is decreased to 31%. The test showed that the calculated relationships agreed with the measured values.  相似文献   
87.
Three types of polycarbosilane-derived SiC fibers (Nicalon, Hi-Nicalon, and Hi-Nicalon S) with different SiO2 film thicknesses ( b ) were subjected to exposure tests at 1773 K in an argon-oxygen gas mixture with an oxygen partial pressure of 1 Pa. The suppression effect of a SiO2 coating on active oxidation was examined through TG, XRD analysis, SEM observation, and tensile tests. All the as-received fibers were oxidized in the active-oxidation regime. The mass gain and the SiO2 film development showed a suppression of active oxidation at b values of ≧0.070 μm for Nicalon, ≧0.013 μm for Hi-Nicalon, and ≧0.010 μm for Hi-Nicalon S fibers. Considerable strength was retained in the SiO2-coated fibers. For Hi-Nicalon fibers, the retained strength was 71%–90% of the strength in the as-received state (2.14–2.69 GPa).  相似文献   
88.
Accumulating evidence has demonstrated that the pathogenesis of epilepsy is linked to neuroinflammation and cerebrovascular dysfunction. Peripheral immune cell invasion into the brain, along with these responses, is implicitly involved in epilepsy. This review explored the current literature on the association between the peripheral and central nervous systems in the pathogenesis of epilepsy, and highlights novel research directions for therapeutic interventions targeting these reactions. Previous experimental and human studies have demonstrated the activation of the innate and adaptive immune responses in the brain. The time required for monocytes (responsible for innate immunity) and T cells (involved in acquired immunity) to invade the central nervous system after a seizure varies. Moreover, the time between the leakage associated with blood–brain barrier (BBB) failure and the infiltration of these cells varies. This suggests that cell infiltration is not merely a secondary disruptive event associated with BBB failure, but also a non-disruptive event facilitated by various mediators produced by the neurovascular unit consisting of neurons, perivascular astrocytes, microglia, pericytes, and endothelial cells. Moreover, genetic manipulation has enabled the differentiation between peripheral monocytes and resident microglia, which was previously considered difficult. Thus, the evidence suggests that peripheral monocytes may contribute to the pathogenesis of seizures.  相似文献   
89.
Chemokines secreted from stromal cells have important roles for interactions with carcinoma cells and regulating tumor progression. C-C motif chemokine ligand (CCL) 5 is expressed in various types of stromal cells and associated with tumor progression, interacting with C-C chemokine receptor (CCR) 1, 3 and 5 expressed in tumor cells. However, the expression on CCL5 and its receptors have so far not been well-examined in human breast carcinoma tissues. We therefore immunolocalized CCL5, as well as CCR1, 3 and 5, in 111 human breast carcinoma tissues and correlated them with clinicopathological characteristics. Stromal CCL5 immunoreactivity was significantly correlated with the aggressive phenotype of breast carcinomas. Importantly, this tendency was observed especially in the CCR3-positive group. Furthermore, the risk of recurrence was significantly higher in the patients with breast carcinomas positive for CCL5 and CCR3 but negative for CCR1 and CCR5, as compared with other patients. In summary, the CCL5-CCR3 axis might contribute to a worse prognosis in breast cancer patients, and these findings will contribute to a better understanding of the significance of the CCL5/CCRs axis in breast carcinoma microenvironment.  相似文献   
90.
Catalytic behavior of silica-supported transition metals for NO reduction with propene in the presence of oxygen was investigated. While both silica and cobalt oxides did not show any activity for the selective NO reduction, impregnated CoO/SiO2 prepared from cobalt acetate showed good activity although the preparation conditions had significant effect on the activity. It was suggested that highly dispersed surface Co2+ ions on silica are responsible for the catalytic activity.  相似文献   
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