Tablet Excipients to the Year 2001: A Look into the Crystal Ball

The future for tablet excipients is reviewed from a number of viewpoints: new materials, formulation development, quality, regulatory aspects, logistics, and production. The field of excipients is changing rapidly in response to economic, regulatory, and scientific pressures. As our understanding of drug delivery improves, so will the demands we place on excipients and on their quality, both chemical and functional. In order to fully optimize drug delivery systems, a better understanding of excipients and their properties and limitations is required. The materials science approach to the study of excipients will help to increase our understanding of excipients and how best to use them. But excipients are only one part of the very complex mechanism whereby new medicinal products are brought to the marketplace. It is important that the processes of formulation design and development are properly integrated to obtain optimized drug delivery systems as early as possible. Developments in related fields such as manufacturing technology, logistics, and analytical techniques will also influence the field of excipients.     

Gas-phase modification of rare-earth intermetallic compounds

Recent work concerning the interstitial modification of permanent magnet alloys based on rare-earth iron intermetallic compounds is reviewed. The crystal structure of the new materials is discussed, then the thermodynamic and statistical aspects of the low-temperature interstitial modification process are considered. Finally, reaction kinetics and thermal stability of the new compounds are discussed and future prospects assessed.     

Computer analysis,design and simulation of horizontal ground heat exchangers

This paper presents a new computerized procedure for dealing with the design of horizontal ground heat exchangers (HGHE). The computer program is based on the transient model of coupled nonlinear partial differential equations governing heat and mass flow in soils. The model is two-dimensional and delineates the operation of ground heat storage with the HGHE and such phenomena as freezing/thawing and drying/rewetting of soil moisture. Comprehensive climatological data, such as ambient temperature, solar radiation, wind velocity, rainfall, snowfall, snow characterstics, and water vapour pressure is used to simulate conditions at the ground surface over any required length of time. The package can be applied to any geographical location by changing climatic and soil data input. The designer has the possibility of selecting any of 12 types of soils from sand to clay, 12 commercial heat pumps, nine different configurations of the HGHE, 16 plastic pipes for ground coils, and 13 ground coil fluids. The program, however, does not calculate the length of the HGHE but it evaluates the thermodynamic performance of a ground heat pump system and provides comprehensive data on thermal and hydraulic conditions in ground heat storage. The length of the ground heat exchanger is obtained from a line source theory model or from site dimensions and pipe spacing. Computed results for ground heat exchanger operation correlate fairly well with experimental data. Simulation of temperature and moisture content in the ground for natural conditions (no heat extraction/deposition) showed a fair agreement with field data. The entire computer program is user-friendly, interactive, menu-driven, and written in FORTRAN 77.     

Adiabatic couplers: design rules and optimization

Explicit analytic design rules are derived for both 3 dB and full adiabatic couplers. The design rules are in excellent agreement with numerical calculations using the beam propagation method (BPM). It is shown that the length scaling for 3 dB couplers compared to full couplers makes the former more difficult to design. The design for each case is optimized to obtain the upper limit of performance and a comparison is carried out between two different design geometries for both 3 dB and full adiabatic couplers     

Multi-emitter Si/GexSi1-x heterojunctionbipolar transistor with no base contact and enhanced logic functionality

We demonstrate multi-emitter Si/Ge_xSi_1-x n-p-n heterojunction bipolar transistors (HBT's) which require no base contact for transistor operation. The base current is supplied by the additional emitter contact under reverse bias due to the heavy doping of the emitter-base junction. Large-area HBT test structures exhibit good transistor characteristics, with current gain β≈400 regardless of whether the base current is supplied by a test base electrode or one of the emitter contacts. These devices have enhanced logic functionality because of emitter contact symmetry. Since device fabrication does not require base electrode formation, the number of processing steps can be reduced without significant penalty to HBT performance     

A new erasing method for a single-voltage long-endurance flashmemory

A new method to erase a standard (double-poly, stacked-gate NOR-type) flash cell is proposed. The method, still using the tunneling mechanism to extract electrons from the floating gate, is based on the concept of keeping the electric field constant during the whole erasing operation. The new method has two main advantages with respect to the conventional one: (1) it does not depend on the supply voltage variation and (2) it allows a better reliability in terms of endurance-induced stress. Results have shown that flash device performances are greatly improved in terms of stability and endurance reliability up to one million cycles     

Small-signal modeling and control of the quasi-square-wave boostconverter

Sampled-data techniques are used to examine the dynamic characteristics and closed-loop performance of the quasi-square-wave boost converter. Direct duty-ratio control and current-mode control are considered. With direct duty-ratio control, the system poles remain well damped under all load conditions, and there is no zero in the control-to-output transfer function. Good closed-loop performance is therefore achieved. Under current-mode control, the requirement for a stabilizing ramp is seen to depend on load conditions, and the achievable voltage control-loop bandwidth is smaller than that using direct duty-ratio control; however, there is a significant reduction in the magnitude of the DC source to output-voltage frequency response     

Simplified modeling of transients in gain-clamped erbium-dopedfiber amplifiers

A simple technique for modeling transients in erbium-doped fiber amplifiers (EDFAs) has been applied to a gain-clamped amplifier. Integration of the variables along the length of the amplifier allows the formulation of the problem as a single simple, ordinary, time-dependent differential equation. We demonstrate examples for a typical conventional EDFA and one in which internal out-of-band oscillation is used to clamp the gain