Spectroscopic and Photoluminescent Properties of Indium Zinc Oxide (IZO) and IZO/Ag/IZO Sandwiched Film

We report the ellipsometric and photoluminescence (PL) properties of Indium zinc oxide (IZO) films, which were grown by radio frequency sputtering under Ar and O₂ atmospheres. IZO films grown under an O₂ atmosphere (IZO (O₂)) showed enhanced PL properties when compared to the films grown under an Ar atmosphere (IZO (Ar)), particularly with respect to the band-edge emission. The enhancement of band-edge emission can be attributed to the reduction in the non-emissive defect states related to oxygen vacancies, which were repaired by sputtering under O₂ atmosphere, whereas the PL enhancement in green region is probably due to the formation of the different types of defects under the excess oxygen environment. This was also supported by the results of time-resolved PL measurements, where the band-edge emission of IZO (Ar) showed rapid decay with a 50 ps lifetime, which indicates the dominance of the relaxation pathway to underlying defect states. In contrast, the PL decay profiles of IZO (O₂) for band-edge and emissive defect states showed moderate decay with time-constants of 2.3 ns and 5.7 ns, respectively. The exciton relaxation dynamics were sensitive to the presence and its kinds of defect states, which were controlled by the growth conditions.     

Characterization,Cathodoluminescence, and Field‐Emission Properties of Morphology‐Tunable CdS Micro/Nanostructures

High‐quality, uniform one‐dimensional CdS micro/nanostructures with different morphologies—microrods, sub‐microwires and nanotips—are fabricated through an easy and effective thermal evaporation process. Their structural, cathodoluminescence and field‐emission properties are systematically investigated. Microrods and nanotips exhibit sharp near‐band‐edge emission and broad deep‐level emission, whereas sub‐microwires show only the deep‐level emission. A significant decrease in a deep‐level/near‐band‐edge intensity ratio is observed along a tapered nanotip towards a smaller diameter part. This behavior is understood by consideration of defect concentrations in the nanotips, as analyzed with high‐resolution transmission electron microscopy. Field‐emission measurements show that the nanotips possess the best field‐emission characteristics among all 1D CdS nanostructures reported to date, with a relatively low turn‐on field of 5.28 V µm^?1 and the highest field‐enhancement factor of 4 819. The field‐enhancement factor, turn‐on and threshold fields are discussed related to structure morphology and vacuum gap variations under emission.     

Fir laser emissions from population inversion transition by TEA-CO2 laser pumping

In this paper, the numerical analysis is given which is applicable for a TEA-CO₂ laser pumping in search of effective pumping method. The analysis also can estimate the optimum pressure for a given molecule and a given pulse laser. Also we report in this work many FIR laser emissions from population inversion transition which have never observed before using a TEA-CO₂ laser.     

NH3／H2O2溶液腐蚀下多孔硅光致荧光

用光致荧光谱、傅里叶变换红外光谱（ＦＴＩＲ）和扫描电子显微镜（ＳＥＭ）对用阳极氧化法制成的多孔硅层在１％ＮＨ３／Ｈ２Ｏ２溶液中的腐蚀现象进行了研究。红外分析表明，Ｓｉ－Ｏ键和Ｈ－Ｏ键的强度随ＮＨ３／Ｈ２Ｏ２溶液的腐蚀时间的增加而增加，Ｓｉ－Ｈ键强主匠随腐蚀时间增加而减少。光致荧光谱的峰值在腐蚀开始时先下降后上升，半高宽变窄，谱峰的以边明显蓝移。分析研究表明，１％ＮＨ３／Ｈ２Ｏ２溶液对多孔硅层有腐蚀     

Thermal performance of a packed bed reactor for a high‐temperature chemical heat pump

The thermal performance of a chemical heat pump that uses the reaction system of calcium oxide/lead oxide/carbon dioxide, which is developed for utilization of high‐temperature heat above 800°C, is studied experimentally. The thermal performance of a packed‐bed reactor of a calcium oxide/carbon dioxide reaction system, which stores and transforms a high‐temperature heat source in the heat pump operation, is examined under various heat pump operation conditions. The energy analysis based on the experiment shows that it is possible to utilize high‐temperature heat with this heat pump. This heat pump can store heat above 850°C and then transform it into a heat above 900°C under an approximate atmospheric pressure. An applied system that combines the heat pump and a high‐temperature process is proposed for high‐efficiency heat utilization. The scale of the heat pump in the combined system is estimated from the experimental results. Copyright © 2001 John Wiley & Sons, Ltd.     

The effect of thiophene sequence separation on air-stable organic thin-film transistor materials

The relationship between thiophene sequences and organic thin-film transistor (OTFT) characteristics was studied to determine their effect on ionization potential, molecular orientation, and air stability. Two types of molecular structures were used: continuous sequence and divided sequence thiophenes. The length of thiophene sequence did not affect FET characteristics but did affect ionic potential and air stability. Furthermore, materials with divided thiophene sequences showed no change in OTFT characteristics when exposed to air. These results suggest that separation of thiophene sequences can improve air stability, which is a problem of thiophene-based materials.     

Secure data communication protocols in bidirectional star network

The author describes a secure data communication method based on the CSMA/CD protocol in bidirectional star networks. A procedure for detecting packet collision while transmitting the jamming signal is required. The author assess two kinds of protocol, a CRV (code rule violation) protocol and a DR (delayed replying) protocol     

Photoluminescence Analysis of Iron Contamination Effect in Multicrystalline Silicon Wafers for Solar Cells

We investigated the effect of Fe contamination on the electronic properties of dislocation clusters in relation to oxygen precipitation in multicrystalline silicon (mc-Si). Photoluminescence (PL) spectroscopy and mapping were performed at room and liquid-He temperatures on mc-Si wafers before and after Fe contamination. PL spectra consisted of the band-edge emission, the 0.78-eV emission associated with oxygen precipitates, and the dislocation-related D-lines. The Fe contamination increased the electrically active dislocation clusters. Part of these clusters acted as preferential oxygen precipitation sites, and their electronic properties were not further influenced by the Fe contamination.     

Detailed Analysis of Temperature Characteristics of an InGaP/InGaAs/Ge Triple-Junction Solar Cell

Temperature characteristics of an InGaP/InGaAs/Ge triple-junction solar cell were analyzed in detail using an equivalent circuit calculation. The current–voltage (I–V) characteristics of single-junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. Fitting of I–V curves between measured and calculated data was carried out, and the diode parameters and temperature exponents of the single-junction solar cells were extracted. The parameters for each single-junction solar cell were used in the equivalent circuit model for the triple-junction solar cell, and calculations of solar cell performance were carried out. Measured and calculated results of the I–V characteristics at various temperatures agreed well.