An analytical threshold-voltage model of trench-isolated MOSdevices with nonuniformly doped substrates

A simple closed-form expression of the threshold voltage is developed for trench-isolated MOS (TIMOS) devices with feature size down to the deep-submicrometer range. The analytical expression is the first developed to include the nonuniform doping effect of a narrow-gate-width device. The inverse narrow width effect can be predicted analytically from the proposed model. It was derived by modeling the gate sidewall capacitance to include the two-dimensional field-induced edge fringing effect and solving the Poisson equation to include the channel implant effect at different operating backgate biases. A two-dimensional simulation program was developed, and the simulated data were used for verification of the analytical model. Good agreements between the modeled and simulated data have been achieved for a wide range of gate widths and biases. The model is well suited for the design of the basic transistor cell in DRAM circuits using trench field oxide isolation structure     

A partial variational analysis of planar dielectric antennas

The reflection and radiation characteristics of a planar dielectric antenna with arbitrary geometrical configuration are analyzed numerically. A variational equation is first established based on the partial variational principle (PVP), and then solved by the finite element method coupled with the frontal solution technique. The radiation and boundary conditions are incorporated by combining the modal expansion method and the Green's function approach for exterior field representation. The reflection coefficients, the radiation patterns, and the directive and power gains of several antennas with linearized structures are studied and compared     

A model for hot-electron-induced MOSFET linear-current degradationbased on mobility reduction due to interface-state generation

A simple model for the hot-electron degradation of MOSFET linear-current drive is developed on the basis of the reduction of the inversion-layer mobility due to the generation of interface states. The model can explain the observed dependence of the device hot-electron lifetime on the effective channel length and oxide thickness by taking into account both the relative nonscalability of the localized damage region and the dependence of the linear-current degradation on the effective vertical electric field E_eff. The model is verified for deep-submicrometer non-LDD n-channel MOSFETs with L_eff=0.2-1.5 μm and T_ox=3.6-21.0 nm. From the correlation between linear-current and charge-pumping degradation, the scattering coefficient α, which relates the number of generated interface states to the corresponding amount of inversion-layer mobility reduction, can be extracted and its dependence on E_eff determined. Using this linear-current degradation model, existing hot-electron lifetime prediction models are modified to account explicitly for the effects of L_eff and T _ox     

Structural Fault Based Specification Reduction for Testing Analog Circuits

Specification reduction can reduce test time, consequently, test cost. In this paper, a methodology to reduce specifications during specification testing for analog circuit is proposed and demonstrated. It starts with first deriving relationships between specifications and parameter variations of the circuit-under-test (CUT) and then reduces specifications by considering bounds of parameter variations. A statistical approach by taking into account of circuit fabrication process fluctuation is also employed and the result shows that the specification reduction depends on the testing confidence. A continuous-time state-variable benchmark filter circuit is applied with this methodology to demonstrate the effectiveness of the approach.     

New collector undercut technique using a SiN sidewall for low basecontact resistance in InP/InGaAs SHBTs

A new collector undercut process using SiN protection sidewall has been developed for high speed InP/InGaAs single heterojunction bipolar transistors (HBTs). The HBTs fabricated using the technique have a larger base contact area, resulting in a smaller DC current gain and smaller base contact resistance than HBTs fabricated using a conventional undercut process while maintaining low C_bc. Due to the reduced base contact resistance, the maximum oscillation frequency (f_max) has been enhanced from 162 GHz to 208 GHz. This result clearly shows the effectiveness of this technique for high-speed HBT process, especially for the HBTs with a thick collector layer, and narrow base metal width     

Reliability analysis of a human operator under different levels of stress

This paper presents a reliability analysis of a human operator carrying out his jobs under different levels of stress. The failed system, which is due to self-correctable error, is restored to as-new at normal stress. Laplace transforms of state probabilities and operator reliability are derived. The mean time to human error is also given.     

On the dynamic characteristics of a balance PUMA-760 robot

To reduce complexities in robot dynamics, a mechanical counter-balancing concept based on the theory of adding balancing masses to unbalanced conventional manipulators is introduced. The effects of balancing on the dynamic characteristics of the PUMA-760 robot when the designed counter-balancing mechanism is applied to the robot are examined. Through theoretical and experimental study many distinct advantages such as simplicity in the dynamic equation and significant reduction in the total required input torques are demonstrated for various manipulator speeds and payload conditions. Based on these results, the dynamic characteristics of the balanced PUMA-760 robot are discussed in detail     

Analysis of the calendering of compressible fluids

Assuming that the compressible behavior of polymeric melt obeys the Spencer–Gilmore equation of state, the effect of melt compressibility on calendering process has been investigated. The compressible model is distinctly different from the incompressible model in three ways. (1) It has substantially lower maximum pressure, (2) the location having maximum pressure moves closer to the nip region; (3) the contact point shifts closer to the nip region.     

Deep-submicrometer MOS device fabrication using aphotoresist-ashing technique

A photoresist-ashing process has been developed which, when used in conjunction with conventional g-line optical lithography, permits the controlled definition of deep-submicrometer features. The ultrafine lines were obtained by calibrated ashing of the lithographically defined features in oxygen plasma. The technique has been successfully used to fabricate MOSFETs with effective channel length as small as 0.15 μm that show excellent characteristics. An NMOS ring oscillator with 0.2-μm devices has been fabricated with a room-temperature propagation delay of 22 ps/stage. Studies indicate that the thinning is both reproducible and uniform so that it should be usable in circuit as well as device fabrication. Since most polymer-based resist materials are etchable with an oxygen plasma, the basic technique could be extended to supplement other lithographic processes, including e-beam and X-ray processes, for fabricating both silicon and nonsilicon devices and circuits     

Fatigue behavior of niobium-hydrogen alloys

The effects of hydrogen on room temperature fatigue behavior of niobium were investi-gated under both high frequency stress control and low frequency strain control condi-tions, in air. Hydrogen markedly improved the fatigue life in high frequency tests, while low frequency tests resulted in decreased fatigue life with increasing hydrogen content. Notches in hydrogen-charged alloys reduced high cycle life significantly but had little ef-fect on low cycle tests. Fracture surfaces of annealed niobium mainly exhibited striations, with numerous cracks originating at troughs of striated bands in both stress and strain control tests. The fracture mode for alloys with hydrogen in solution was mixed, with striations interspersed with cleavage facets at high frequencies but generally cleavage steps at low frequencies. For the hydrided alloys, distinctive steps of mixed ductile-brit-tle appearance were revealed under high frequency conditions, but large cleavage facets only were observed for low frequency tests. The results are discussed in terms of the effects of hydrogen on the cyclic strain hardening rate, as well as on fatigue strength and ductility of niobium.