全文获取类型
收费全文 | 411843篇 |
免费 | 38220篇 |
国内免费 | 14552篇 |
专业分类
电工技术 | 21471篇 |
技术理论 | 24篇 |
综合类 | 21010篇 |
化学工业 | 77336篇 |
金属工艺 | 21257篇 |
机械仪表 | 23299篇 |
建筑科学 | 28629篇 |
矿业工程 | 9289篇 |
能源动力 | 10490篇 |
轻工业 | 28715篇 |
水利工程 | 7085篇 |
石油天然气 | 20888篇 |
武器工业 | 2496篇 |
无线电 | 48919篇 |
一般工业技术 | 61893篇 |
冶金工业 | 22763篇 |
原子能技术 | 7139篇 |
自动化技术 | 51912篇 |
出版年
2024年 | 1599篇 |
2023年 | 5448篇 |
2022年 | 10452篇 |
2021年 | 14392篇 |
2020年 | 11597篇 |
2019年 | 11489篇 |
2018年 | 12967篇 |
2017年 | 14614篇 |
2016年 | 14120篇 |
2015年 | 16352篇 |
2014年 | 20354篇 |
2013年 | 25524篇 |
2012年 | 24339篇 |
2011年 | 26671篇 |
2010年 | 23204篇 |
2009年 | 22664篇 |
2008年 | 21551篇 |
2007年 | 20563篇 |
2006年 | 20215篇 |
2005年 | 17440篇 |
2004年 | 12882篇 |
2003年 | 12133篇 |
2002年 | 11762篇 |
2001年 | 10528篇 |
2000年 | 9810篇 |
1999年 | 9523篇 |
1998年 | 8009篇 |
1997年 | 6611篇 |
1996年 | 5936篇 |
1995年 | 5058篇 |
1994年 | 4254篇 |
1993年 | 3465篇 |
1992年 | 2935篇 |
1991年 | 2386篇 |
1990年 | 2148篇 |
1989年 | 1906篇 |
1988年 | 1604篇 |
1987年 | 1337篇 |
1986年 | 1171篇 |
1985年 | 1049篇 |
1984年 | 922篇 |
1983年 | 848篇 |
1982年 | 826篇 |
1981年 | 813篇 |
1980年 | 771篇 |
1979年 | 838篇 |
1978年 | 846篇 |
1977年 | 805篇 |
1976年 | 835篇 |
1973年 | 762篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
101.
回热损失对磁斯特林制冷循环制冷率的影响 总被引:7,自引:0,他引:7
从铁磁质的磁化强度一般表示式出发,探讨热阻和回热损失对磁斯特林制冷循环性能的影响,导出最大制冷率及其它性能参数。得到了结果适用于以顺磁质为工质的磁斯特林制冷循环。并指出在理想回热条件下的结论也适用于磁卡诺制冷循环。 相似文献
102.
报导一种模糊逻辑控制系统的建模与优化方法。以此方法设计的模糊逻辑控制器,用于双波长稳频CO2激光器的控制得到令人满意的结果。 相似文献
103.
Modeling ion implantation of HgCdTe 总被引:2,自引:0,他引:2
H. G. Robinson D. H. Mao B. L. Williams S. Holander-Gleixner J. E. Yu C. R. Helms 《Journal of Electronic Materials》1996,25(8):1336-1340
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction
is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant
doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by
Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T
by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution
depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released,
they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results
of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing
conditions, including implant dose, annealing temperature, and doping background. 相似文献
104.
Storage performance-metrics and benchmarks 总被引:2,自引:0,他引:2
Chen P.M. Patterson D.A. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1993,81(8):1151-1165
The metrics and benchmarks used in storage performance evaluation are discussed. The technology trends taking place in storage systems, such as disk and tape evolution, disk arrays, and solid-state disks, are highlighted. The current popular I/O benchmarks are then described, reviewed, and run on three systems: a DECstation 5000/200 running the Sprite Operating System, a SPARCstation 1+ running SunOS, and an HP Series 700 (Model 730) running HP-UX. Two approaches to storage benchmarks-LADDIS and a self-scaling benchmark with predicted performance-are also described 相似文献
105.
In this study, the effect and side-effect of epidural injection with lappaconitine compound for post-operative analgesia was observed. One hundred and twenty patients were randomly divided into 4 groups. Lappaconitine compound (LB) consisted of 12 mg of lappaconitine and 22.5 mg of bupivacaine, was given to group A (the group of observation), and lappaconitine 12 mg, bupivacaine 22.5 mg and morphine 2 mg to group B, C and D respectively for control. All were given by epidural injection with single blind method during post-operative pain of incision operation. Result showed that the initiating of analgesia was quicker in group A and C than that in group B and D, and the efficacy was group D > A > C > B. There was significant difference between group A and B in the above two parameters, P < 0.01 and P < 0.05. The analgisia maintenence time of single injection was D > A > B > C, that of group D was significantly longer than that of group A (P < 0.01). It indicated that the epidural injection with LB was more rapid and potent than that with lappaconitine alone in post-operative analgesia, and the former had no side-effect, it was safer than morphine. 相似文献
106.
本文概述了离子注入过程中污染产生的原因和防止污染的措施,特别强调了对微粒污染和金属污染的防护以满足ULSI加工对离子注入的要求。 相似文献
107.
Code-division multiple-access (CDMA) implemented with direct-sequence spread spectrum (DS/SS) signaling is a promising multiplexing technique for cellular telecommunications services. The efficiency of a direct-sequence spread-spectrum code-division multiple-access (DS-CDMA) system depends heavily on the shape of the spectrum of the spread signal. Maximum efficiency is obtained with an ideal brick-wall bandpass spectrum. There are two approaches toward achieving such a spectrum. One is to use a simple spreader that produces a broad spectrum and then follow it with a precise, high order filter to band limit the spectrum. A second approach, which is the approach taken in this paper, is to use a spreader that produces a spectrum close to the ideal spectrum and then employ a simple filter to control the out-of-band power. The proposed spreader/despreader is based on a simple hybrid function and can be easily implemented. An analysis provides a compact expression for the signal-to-noise ratio (SNR) of a RAKE receiver. The expression includes the effects of baseband, intermediate frequency (IF) and RF filtering as well as the effects of the spectral densities of the spreading/despreading functions. The analysis shows that the proposed spreader/despreader yields superior performance over a conventional pseudo noise (PN) spreading/despreading mechanism 相似文献
108.
A.G. Berkovski G. Chiodi J.-P. Fabre A. Frenkel S.V. Golovkin Yu.I. Gubanov G.N. Kislizkai E.N. Kozarenko I.E. Kreslo A.E. Kushnirenko G. Martellotti D. Mazza A.M. Medvedkov G. Penso 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》1996,380(3):537-543
We present the performance of a high-speed gateable vacuum image pipeline, which permits individual images to be delayed and selected from continuous non-repetitive image stream. This device is composed of a vacuum tube equipped with a photocathode at one end, a phosphor screen at the other end, and a system of metal grids in between. Photoelectrons produced by the images focused on the photocathode, are guided by a uniform magnetic field, parallel to the tube axis. By changing the grid potentials, the drift time of the photoelectrons inside the tube can be varied from 0.35 to 1.5 μs. An image can then be selected by an external trigger with a time resolution in the range of 4–30 ns, depending on the delay time. The selected photoelectrons are finally accelerated onto the phosphor screen, set at 10 kV, where they reproduce the desired image. With a magnetic field of 0.1 T, a spatial resolution of 33 lp/mm was obtained. The high spatial and time resolution make this device an interesting tool for high-energy physics and astrophysics experiments, and for high-speed photography. 相似文献
109.
Zhengmao Ye Campbell J.C. Zhonghui Chen Eui-Tae Kim Madhukar A. 《Quantum Electronics, IEEE Journal of》2002,38(9):1234-1237
An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 /spl mu/m. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivity, D*, was 10/sup 10/ cm/spl middot/Hz/sup 1/2//W. 相似文献
110.
Yuhua Cheng Chih-Hung Chen Matloubian M. Deen M.J. 《Electron Devices, IEEE Transactions on》2002,49(3):400-408
High-frequency (HF) AC and noise modeling of MOSFETs for radio frequency (RF) integrated circuit (IC) design is discussed. A subcircuit RF model incorporating the HF effects of parasitics is presented. This model is compared with the measured data for both y parameter and fT characteristics. Good model accuracy is achieved against measurements for a 0.25 μm RF CMOS technology. The HF noise predictivity of the model is also examined with measured data. Furthermore, a methodology to extract the channel thermal noise of MOSFETs from HF noise measurements is presented. By using the extracted channel thermal noise, any thermal noise models can be verified directly. Several noise models including the RF model discussed in this paper have been examined, and the results show that the RF model can predict the channel thermal noise better than the other models 相似文献