全文获取类型
收费全文 | 117663篇 |
免费 | 3268篇 |
国内免费 | 1394篇 |
专业分类
电工技术 | 2241篇 |
技术理论 | 4篇 |
综合类 | 3851篇 |
化学工业 | 17262篇 |
金属工艺 | 6269篇 |
机械仪表 | 4619篇 |
建筑科学 | 3832篇 |
矿业工程 | 1314篇 |
能源动力 | 2286篇 |
轻工业 | 5769篇 |
水利工程 | 1700篇 |
石油天然气 | 1349篇 |
武器工业 | 146篇 |
无线电 | 14502篇 |
一般工业技术 | 21174篇 |
冶金工业 | 5316篇 |
原子能技术 | 640篇 |
自动化技术 | 30051篇 |
出版年
2024年 | 105篇 |
2023年 | 451篇 |
2022年 | 865篇 |
2021年 | 1202篇 |
2020年 | 930篇 |
2019年 | 805篇 |
2018年 | 15197篇 |
2017年 | 14177篇 |
2016年 | 10727篇 |
2015年 | 1659篇 |
2014年 | 1635篇 |
2013年 | 2297篇 |
2012年 | 5074篇 |
2011年 | 11586篇 |
2010年 | 10008篇 |
2009年 | 7349篇 |
2008年 | 8595篇 |
2007年 | 9421篇 |
2006年 | 1671篇 |
2005年 | 2438篇 |
2004年 | 2216篇 |
2003年 | 2336篇 |
2002年 | 1925篇 |
2001年 | 1270篇 |
2000年 | 989篇 |
1999年 | 763篇 |
1998年 | 1026篇 |
1997年 | 716篇 |
1996年 | 618篇 |
1995年 | 482篇 |
1994年 | 399篇 |
1993年 | 340篇 |
1992年 | 258篇 |
1991年 | 243篇 |
1990年 | 225篇 |
1989年 | 199篇 |
1988年 | 179篇 |
1987年 | 153篇 |
1986年 | 129篇 |
1985年 | 127篇 |
1984年 | 110篇 |
1983年 | 75篇 |
1982年 | 70篇 |
1981年 | 59篇 |
1980年 | 81篇 |
1978年 | 60篇 |
1977年 | 58篇 |
1976年 | 76篇 |
1955年 | 71篇 |
1954年 | 69篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
51.
Sanghyun Ju Jianye Li Pimparkar N. Alam M.A. Chang R.P.H. Janes D.B. 《Nanotechnology, IEEE Transactions on》2007,6(3):390-395
Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO2 gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold 相似文献
52.
53.
54.
A ternary blend system comprising poly(cyclohexyl methacrylate) (PCHMA), poly(α‐methyl styrene) (PαMS) and poly(4‐methyl styrene) (P4MS) was investigated by thermal analysis, optical and scanning electron microscopy. Ternary phase behaviour was compared with the behaviour for the three constituent binary pairs. This study showed that the ternary blends of PCHMA/PαMS/P4MS in most compositions were miscible, with an apparent glass transition temperature (Tg) and distinct cloud‐point transitions, which were located at lower temperatures than their binary counterparts. However, in a closed‐loop range of compositions roughly near the centre of the triangular phase diagram, some ternary blends displayed phase separation with heterogeneity domains of about 1 µm. Therefore, it is properly concluded that ternary PCHMA/PαMS/P4M is partially miscible with a small closed‐loop immisciblity range, even though all the constituent binary pairs are fully miscible. Thermodynamic backgrounds leading to decreased miscibility and greater heterogeneity in a ternary polymer system in comparison with the binary counterparts are discussed. © 2003 Society of Chemical Industry 相似文献
55.
T. H. Chang K. F. Pao S. H. Chen K. R. Chu 《Journal of Infrared, Millimeter and Terahertz Waves》2003,24(9):1415-1420
Self-consistent effects on the starting current of gyrotron oscillators are examined. Field profiles in the open cavity are shown to be sensitive to the interaction dynamics. This can either significantly raise or lower the oscillation threshold, particularly for the low-Q modes. The transition from resonant-mode oscillations at the low magnetic field to backward-wave oscillations at the high magnetic field is demonstrated. 相似文献
56.
Min-Seok Park Vladislav P. Vislovskiy Jong-San Chang Yong-Gun Shul Jin S. Yoo Sang-Eon Park 《Catalysis Today》2003,87(1-4):205-212
Alumina-supported vanadium oxide, VOx/Al2O3, and binary vanadium–antimony oxides, VSbOx/Al2O3, have been tested in the ethylbenzene dehydrogenation with carbon dioxide and characterized by SBET, X-ray diffraction, X-ray photoelectron spectroscopy, hydrogen temperature-programmed reduction and CO2 pulse methods. VSbOx/Al2O3 exhibited enhanced catalytic activity and especially on-stream stability compared to VOx/Al2O3 catalyst. Incorporation of antimony into VOx/Al2O3 increased dispersion of active VOx species, enhanced redox properties of the systems and formed a new mixed vanadium–antimony oxide phase in the most catalytically efficient V0.43Sb0.57Ox/Al2O3 system. 相似文献
57.
58.
This paper reports the findings of a detailed study of Web-based systems design (WBSD) practices in Ireland based on data
collected over a 3-year period (2002–2005), the objectives of which were to (1) contribute towards a richer understanding
of the current “real-world” context of WBSD by characterising the profile of a typical project (team size, timeframe, nature
of requirements, etc.) and identifying the key challenges, constraints, and imperatives (i.e. “mediating factors”) faced by
Web-based system designers, and (2) understand how those contextual parameters and mediating factors influence the activity
of WBSD as regards the selection and enactment of whatever design practices are therefore engaged (i.e. the use of methods,
procedures, etc.). Data was gathered through a survey which yielded 165 usable responses, and later through a series of semi-structured
qualitative interviews. Using grounded theory, an explanatory conceptual framework is derived, based on an extension of the
“method-in-action” model, the application of which to WBSD has not been previously investigated in depth. It is proposed that
this framework of WBSD issues is valuable in a number of ways to educators, researchers, practitioners, and method engineers. 相似文献
59.
60.
Chang E.Y. Dean R. Proctor J. Elmer R. Pande K. 《Semiconductor Manufacturing, IEEE Transactions on》1991,4(1):66-68
A dicing process for GaAs MMIC (monolithic microwave integrated circuit) wafers using spin-on wax for wafer mounting and a hybrid process of wet chemical etching/mechanical sawing for chip dicing is described. This process minimizes ragged chip edges and reduces generation of microcracks in addition to the elimination of the plated gold burrs on the backside of the diced MMIC chips. This process gives a uniformity of -3 μm across a 2-in wafer following the completion of the whole backside process. This GaAs chip dicing technique is amenable to production because it exhibits both a very high chip yield (>90%) and nearly flawless edges 相似文献