Analysis of singularities from modulus maxima of complex wavelets

Complex-valued wavelets are normally used to measure instantaneous frequencies, while real wavelets are normally used to detect singularities. We prove that the wavelet modulus maxima with a complex-valued wavelet can detect and characterize singularities. This is an extension of the previous wavelet work of Mallat and Hwang on modulus maxima using a real wavelet. With this extension, we can simultaneously detect instantaneous frequencies and singularities from the wavelet modulus maxima of a complex-valued wavelet. Some results of singularity detection with the modulus maxima from a real wavelet and an analytic complex-valued wavelet are compared. We also demonstrate that singularity detection methods can be employed to detect the corners of a planar object.     

Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET

From the detailed analysis of the dependence of threshold voltage shift and positive fixed charge/interface state generation on the stress time/temperature of negative bias temperature instability (NBTI) for various nitrogen concentrations at the oxide/Si interface, the mechanism of nitrogen-enhanced NBTI effect has been studied experimentally. The experimental results can be understood in terms of the reaction energies of the hydrogen trapping reactions at the interface, which are obtained from first-principles calculations. The calculations show that the nitrogen's lone-pair electrons can trap dissociated hydrogen species more easily than oxygen. From the experimental and theoretical studies, one can conclude that the roles of nitrogen in the NBTI are two folds, i.e., it provides more reaction sites, and it can also enhance the NBTI reaction by reducing the reaction energy.     

龙滩碾压混凝土芯样试件特性试验研究

介绍龙滩碾压混凝土现场芯样试件特性研究成果，内容包括碾压混凝土强度、弹性模量、超声波速度、动力特性和断裂特性等资料。论证了建造200m级龙滩碾压混凝土重力坝的可行性。     

MATLAB在三相桥式全控整流电路教学中的应用

改革传统教学方法,在电力电子技术专业课课堂教学中将Matlab/Simulink仿真软件引入到课堂教学中,通过对课堂所学理论知识的建模和仿真,验证课堂所学知识的正确性,激发了学生学习兴趣。经过多年实践证明,课堂教学成效好,值得推广。     

FDP FPGA芯片的设计实现

研究了新型的FDP FPGA电路结构及其设计实现.新颖的基于3输入查找表的可编程单元结构,与传统的基于4输入查找表相比,可以提高约11%的逻辑利用率;独特的层次化的分段可编程互联结构以及高效的开关盒设计,使得不同的互联资源可以快速直接相连,大大提高了可编程布线资源效率.FDP芯片包括1600个可编程逻辑单元、160个可用IO、内嵌16k双开块RAM,采用SMIC 0.18μm CMOS工艺全定制方法设计并流片,其裸芯片面积为6.104mm×6.620mm.最终芯片软硬件测试结果表明:芯片各种可编程资源可以高效地配合其软件正确实现用户电路功能.     

Electrode Design for Lithium–Sulfur Batteries: Problems and Solutions

Pursuit of advanced batteries with high‐energy density is one of the eternal goals for electrochemists. Over the past decades, lithium–sulfur batteries (LSBs) have gained world‐wide popularity due to their high theoretical energy density and cost effectiveness. However, their road to the market is still full of thorns. Apart from the poor electronic conductivity of sulfur‐based cathodes, LSBs involve special multielectron reaction mechanisms associated with active soluble lithium polysulfides intermediates. Accordingly, the electrode design and fabrication protocols of LSBs are different from those of traditional lithium ion batteries. This review is aimed at discussing the electrode design/fabrication protocols of LSBs, especially the current problems on various sulfur‐based cathodes (such as S, Li₂S, Li₂S_x catholyte, organopolysulfides) and corresponding solutions. Different fabrication methods of sulfur‐based cathodes are introduced and their corresponding bullet points to achieve high‐quality cathodes are highlighted. In addition, the challenges and solutions of sulfur‐based cathodes including active material content, mass loading, conductive agent/binder, compaction density, electrolyte/sulfur ratio, and current collector are summarized and rational strategies are refined to address these issues. Finally, the future prospects on sulfur‐based cathodes and LSBs are proposed.     

Ga_(1-x)Al_xP混晶的长波长光学声子谱

本文报道Ga_(1-x)Al_xP混晶的室温喇曼散射测试结果。所用的样品用液相外延方法生长在〈111〉晶向的GaP衬底上。混晶组分x值在0.16—0.65之间。实验结果表明,Ga_(1-x)Al_xP混晶的长波长光学声子谱呈现双模行为,具有类GaP和类AIP两个光学支。     

基于线阵CCD的微型光谱仪的研制

为了满足环境污染检测等工业实际应用的需要,便于系统的集成、降低成本,研制了基于CCD芯片的微型光谱仪,重点介绍了仪器的光学和电子学设计。光学系统采用了非对称交叉式Czerny-Turner分光结构,使用线阵CCD为光探测元件;电子学设计部分结合单片机智能化控制的特点和复杂可编程逻辑器件时序准确、可编程的优点实现了高效、灵活的光谱数据采集。 CCD光谱仪的性能测试表明,该光谱仪光谱覆盖范围为350 nm - 780 nm,光谱分辨率达到了0.6 nm,信噪比近500。     

基于GaN FET的LED微显示单片集成技术研究进展

发光二极管(LED)微显示技术由于其潜在应用而倍受关注.与主流的基于硅基驱动器的LED微显示技术不同,采用GaN场效应晶体管(FET)驱动的LED微显示技术制作的器件具有可靠性高和制作工艺简单等优势.总结了各种GaN FET驱动LED微显示的器件结构及性能,这些器件结构包括:直接利用LED外延结构制作FET驱动微型LED发光像素的横向集成结构、HEMT驱动微型LED发光像素的横向叠层结构、纳米线GaN FET驱动LED发光像素的垂直叠层结构.对基于GaN FET驱动的LED微显示技术的进展进行了综述.对GaN FET驱动的LED微显示技术的应用前景和研究方向进行了展望.     

Hole Transport Materials Based on 6,12‐Dihydroindeno[1,2‐b]fluorine with Different Periphery Groups: A New Strategy for Dopant‐Free Perovskite Solar Cells

Although several hole‐transporting materials (HTMs) have been designed to obtain perovskite solar cells (PSCs) devices with high performance, the dopant‐free HTMs for efficient and stable PSCs remain rare. Herein, a rigid planar 6,12‐dihydroindeno[1,2‐b]fluorine (IDF) core with different numbers of bulky periphery groups to construct dopant‐free HTMs of IDF‐SFXPh, IDF‐DiDPA, and IDF‐TeDPA is modified. Thanks to the contributions of the planar IDF core and the twisted SFX periphery groups, the dopant‐free IDF‐SFXPh‐based PSCs device achieves a device performance of 17.6%, comparable to the doped 2,2′,7,7′‐tetrakis(N,N‐di‐p‐methoxyphenylamine)‐9,9′‐spirobifluorene (spiro‐OMeTAD)‐based device (17.6%), with much enhanced device stability under glovebox and ambient conditions.