Fabrication of Microcavity Light-Emitting Diodes Using Highly Reflective AlN–GaN and Ta2O 5–SiO2 Distributed Bragg Mirrors

We report the fabrication of microcavity light-emitting diodes (MCLEDs) with high reflectivity and crack-free AlN-GaN distributed Bragg reflector (DBR). The 5lambda microcavity structure consists of an n-type GaN, ten pairs InGaN-GaN multiple quantum wells and p-type GaN sandwiched between the hybrid cavity mode of an AlN-GaN and a Ta₂O₅-SiO₂ DBR. The AlN-GaN DBR has 29 periods with insertion of six AlN-GaN superlattice layers showing a crack-free surface morphology and a high peak reflectivity of 99.4% with a stopband of 21 nm. The output power of MCLED is about 11 W at an injection current of 7 mA. The electroluminescence has a polarization property with a degree of polarization of about 51%.     

Fabrication and properties of PLZT ceramics from spray-dried aqueous solution

PLZT ceramics with the composition of 9/62/38 (La/Zr/Ti) were fabricated from spraydried aqueous solution. Complete crystallization of the spray-dried powder is achieved after 1 hr calcination at 650‡ C as compared to 800‡ C, 1 hr for conventional mixedoxide method. Sintering environment plays an important role in the densification of PLZT ceramics. Densities of the atmosphere sintered samples are much higher than those of normal sintered ones. PLZT ceramics derived from spray-dried powders have properties comparable to those derived from sol-gel ones. The spray-dried method presents a less expensive and more effective approach in the synthesis of PLZT ceramics.     

Erbium-doped fiber amplifier second-order distortion in analog links and electronic compensation

The authors study the second-order distortion when an erbium-doped fiber amplifier (EDFA) is used to amplify the analog optical AM cable TV (CATV) multiple carrier signal from a directly modulated distributed feedback (DFB) semiconductor laser. Experimentally, it was seen that this second order distortion depends critically on the gain of the EDFA fiber amplifier. The authors attribute this distortion to the interaction between the frequency chirping of the DFB laser and the variable gain with wavelength of the amplifier. The authors describe an electronic predistorter that compensates the nonlinearity produced by the DFB-laser-EDFA combination. As a result, the high power advantage of the EDFA can be fully realized in spite of the potential for second-order distortion in the system.<>     

Effect of hydroxyl density on condensation behaviors of self-assembled monolayers and performance of pentacene-base organic thin-film transistors

A series of self-assembled monolayers (SAMs), comprising octadecyltrichlorosilane (ODTS), dodecyltrichlorosilane (DDTS), and hexamethyldisilazane (HMDS), were prepared to examine the effects of phase states and condensation behaviors of SAMs on the morphologies and performance of pentacene-based organic field-effect transistors (OFETs) by means of Fourier Transform Infrared (FT-IR) spectrometer, atomic force microscope (AFM), X-ray diffraction (XRD), and semiconductor parameter analyzer. Experimental results reveal that the treatment of SiO₂ substrates with O₂ plasma (denoted as O₂-SiO₂) and the preparation temperature of SAMs dramatically influence the morphologies of SAMs and the performance of corresponding pentacene-based (no purification) OFETs. When the SAMs were prepared at 30 °C, the OFET based on ODTS-treated O₂-SiO₂ substrate had the highest hole mobility, reaching as large as 1.15 cm² V^?1 s^?1, and an on/off current ratio in excess of 10⁵; these values are both much larger than those of a device based on ODTS-modified SiO₂ substrates without O₂ plasma treatment and O₂-SiO₂ substrates modified by ODTS SAMs prepared at other temperatures. OFETs based on O₂-SiO₂ substrates that were modified by DDTS and HMDS SAMs prepared at 4 °C performed best.     

Voice low tone to high tone ratio: a potential quantitative index for vowel [a:] and its nasalization

Hypernasality is associated with various diseases and interferes with speech intelligibility. A recently developed quantitative index called voice low tone to high tone ratio (VLHR) was used to estimate nasalization. The voice spectrum is divided into low-frequency power (LFP) and high-frequency power (HFP) by a specific cutoff frequency (600 Hz). VLHR is defined as the division of LFP into HFP and is expressed in decibels. Voice signals of the sustained vowel [a :] and its nasalization in eight subjects with hypernasality were collected for analysis of nasalance and VLHR. The correlation of VLHR with nasalance scores was significant (r = 0.76, p < 0.01), and so was the correlation between VLHR and perceptual hypernasality scores (r = 0.80, p < 0.01). Simultaneous recordings of nasal airflow temperature with a thermistor and voice signals in another 8 healthy subjects showed a significant correlation between temperature rate of nasal airflow and VLHR (r = 0.76, p < 0.01), as well. We conclude that VLHR may become a potential quantitative index of hypernasal speech and can be applied in either basic or clinical studies.     

Dual Mechatronic MPPT Controllers With PN and OPSO Control Algorithms for the Rotatable Solar Panel in PHEV System

This paper aims at increasing the efficiency of the plug-in hybrid electric vehicle (PHEV) by using rotatable solar panel. Conventionally, the PHEV with solar panel has a critical problem of putting on the roof of a PHEV. Since the limited space on the roof of the vehicle is not large enough, rotatable structure is considered to track the sunlight by mechanical petri-net (PN)-based maximum power point tracking (MPPT) control. A stepping motor is used to control the rotating angle of the rotating solar panel. In addition, the electric MPPT with orthogonal particle swarm optimization (OPSO) method is also included. With the dual mechatronic MPPT with PN $+$OPSO control algorithms, the maximum power in a limited roof space of the vehicle is possible. The solar panel has not to be very large. This will increase the efficiency of the PHEV. It is convinced that the proposed dual mechatronic PN$+$ OPSO MPPT controllers are helpful to the PHEV system.      

Augmented Cell Performance of NO-Based Storage Dielectric by N$_2$ O-Treated Nitride Film for Trench DRAM

Owing to the delayed introduction of high-kappa storage dielectric for trench DRAM, a new technology to extend the existing NO storage dielectric becomes a prerequisite. For trench DRAM, the nitride film of NO-based storage dielectric has been proved to possess higher quality by proper treatment, which enables further reduction in nitride thickness and extension of scaling limit for the existing storage dielectric. A 164% leakage current improvement without sacrificing the cell capacitance can be achieved through this process, while keeping the outstanding reliability performance of less than 438 ppm failure rate after a ten-year operation. Most importantly, this new process can be fully integrated into incumbent furnace process, which means that no additional tool investment is required, and it is crucial for trench DRAM manufacturers to maintain their competitive advantage before the high-k material prevails at 65 nm technology node.     

Kitkaite NiTeSe,an Ambient-Stable Layered Dirac Semimetal with Low-Energy Type-II Fermions with Application Capabilities in Spintronics and Optoelectronics

The emergence of Dirac semimetals has stimulated growing attention, owing to the considerable technological potential arising from their peculiar exotic quantum transport related to their nontrivial topological states. Especially, materials showing type-II Dirac fermions afford novel device functionalities enabled by anisotropic optical and magnetotransport properties. Nevertheless, real technological implementation has remained elusive so far. Definitely, in most Dirac semimetals, the Dirac point lies deep below the Fermi level, limiting technological exploitation. Here, it is shown that kitkaite (NiTeSe) represents an ideal platform for type-II Dirac fermiology based on spin-resolved angle-resolved photoemission spectroscopy and density functional theory. Precisely, the existence of type-II bulk Dirac fermions is discovered in NiTeSe around the Fermi level and the presence of topological surface states with strong (≈50%) spin polarization. By means of surface-science experiments in near-ambient pressure conditions, chemical inertness towards ambient gases (oxygen and water) is also demonstrated. Correspondingly, NiTeSe-based devices without encapsulation afford long-term efficiency, as demonstrated by the direct implementation of a NiTeSe-based microwave receiver with a room-temperature photocurrent of 2.8 µA at 28 GHz and more than two orders of magnitude linear dynamic range. The findings are essential to bringing to fruition type-II Dirac fermions in photonics, spintronics, and optoelectronics.     

Polymer‐Stabilized Chromonic Liquid‐Crystalline Polarizer

Robust coatable polarizer is fabricated by the self‐assembly of lyotropic chromonic liquid crystals and subsequent photo‐polymerizing processes. Their molecular packing structures and optical behaviors are investigated by the combined techniques of microscopy, scattering and spectroscopy. To stabilize the oriented Sunset Yellow FCF (H‐SY) films and to minimize the possible defects generated during and after the coating, acrylic acid (AA) is added to the H‐SY/H₂O solution and photo‐polymerized. Utilizing cross‐polarized optical microscopy, phase behaviors of the H‐SY/H₂O/AA solution are monitored by varying the compositions and temperatures of the solution. Based on the experimental results of two‐dimensional wide angle X‐ray diffraction and selected area electron diffraction, the H‐SY crystalline unit cell is determined to be a monoclinic structure with the dimensions of a = 1.70 nm, b = 1.78 nm, c = 0.68 nm, α = β = 90.0° and γ = 84.5°. The molecular arrangements in the oriented H‐SY films were further confirmed by polarized Fourier‐transform infrared spectroscopy. The polymer‐stabilized H‐SY films show good mechanical and chemical stabilities with a high polarizability. Additionally, patterned polarizers are fabricated by applying a photo‐mask during the photo‐polymerization of AA, which may open new doors for practical applications in electro‐optic devices.     

A flip-chip packaged 80-nm In0.7Ga0.3As MHEMT for millimeter-wave low-noise applications

In this paper, we present a flip-chip 80-nm In_0.7Ga_0.3As MHEMT device on an alumina (Al₂O₃) substrate with very little decay on device RF performance up to 60 GHz. After package, the device exhibited high I_DS = 435 mA/mm at V_DS = 1.5 V, high g_m = 930 mS/mm at V_DS = 1.3 V, the measured gain was 7.5 dB and the minimum noise figure (NF_min) was 2.5 dB at 60 GHz. As compared to the bare chip, the packaged device exhibited very small degradation in performance. The result shows that with proper design of the matching circuits and packaging materials, the flip-chip technology can be used for discrete low noise FET package up to millimeter-wave range.