A Shortcut Method for Estimating the HETP of Structured Packed Distillation Columns at Elevated Pressure

A shortcut model is developed for predicting the HETP of a structured packed distillation column operating at elevated pressure. The proposed model incorporates the geometrical parameters of the packing, physical properties of the vapor and liquid phases, and the hydrodynamics of the two‐phase flow. The proposed model is tested and validated by comparing the predicted results with the present experimental data and some published HETP data. The results show that the proposed model can predict the experimental data with a deviation smaller than 20 %.     

CFD Simulation of Liquid Film Flow on Inclined Plates

A two‐phase flow CFD model using the volume of fluid (VOF) method is presented for predicting the hydrodynamics of falling film flow on inclined plates, corresponding to the surface texture of structured packing. Using the proposed CFD model the influence of the solid surface microstructure, liquid properties and gas flow rate on the flow behavior was investigated. From the simulated results it was shown that under the condition of no gas flow the liquid flow patterns are dependent on the microstructure of the plates, and proper microstructuring of the solid surface will improve the formation of a continuous liquid film. It was also found that liquid properties, especially surface tension, play an important role in determining the thin‐film pattern. However, there are very different liquid film patterns under the action of gas flow. Thinner liquid films break easily, but thicker liquid films can remain continuous even at higher gas flow rates, which demonstrates that all factors affecting the liquid film thickness will affect the liquid film patterns under conditions of counter‐current two‐phase flow.     

Electron spectroscopies and their use for materials characterization

We present here a general overview of electron spectroscopies from a practical point of view. The most frequently used ones are described and the type of structural information they can provide on materials is explained in relation to the physical processes on which they are based. Furthermore, we explore critically and in detail various tools that have been developed to allow a systematic solving of structures by these spectroscopies.     

飞行人员骨密度与内分泌调节关系的探讨

对37名骨密度(BD)低下的飞行员(实验组)和BD正常的48名飞行员、100名地面人员(正常对照组)进行了BD和血清TT_3、TT_4、TSH IRMA、CT、PTH、E_2和T放射免疫测定。结果显示,实验组BD均值明显低于对照组(p<0.01),血清TT_3、TT_4、CT、E_2(女性)和T(男性)均值与对照组比较,大多数年龄存在着显著或非常显著差异(p<0.05或p<0.01)。同时对飞行人员BD与几种内分泌激素关系进行了探讨。     

裂解C_5馏分综合利用的对策

探讨了裂解C_5馏分就近集中分离综合利用和分散直接利用,以及建设单独分离双环戊二烯装置发展下游精细化工产品的综合利用策略。     

Minimum entropy and information measure

Kapur et al. (1995) introduced the MinMax information measure, which is based on both maximum and minimum entropy. The major obstacle for using this measure, in practice, is the difficulty in finding the minimum entropy. An analytical expression has already been developed for calculating the minimum entropy when only variance is specified. An analytical formula is obtained for calculating the minimum entropy when only mean is specified, and numerical examples are given for illustration     

Anomalous variations of OFF-State leakage current in poly-Si TFTunder static stress

Studies the anomalous variations of the OFF-state leakage current (I_OFF) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous I_OFF can be attributed to (1) I_OFF increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and (2) I_OFF decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (~(V_Gstress V_Dstress)/T _OX) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (~V_Dstress/L_CH)     

紧凑 Tokamak(球形环)聚变堆第一壁及中心导体柱上中子负荷及核热计算与分析

采用通用蒙特卡罗粒子输运程序ＭＣＮＰ／３８计算低环径比Ｔｏｋａｍａｋ（紧凑环或球形环）聚变堆第一壁及中心导体上的中子壁负荷分布和核热沉积分布，并与常规Ｔｏｋａｍａｋ堆第一壁上中子壁负荷分布和核热沉积分布进行比较、分析。结果表明，在中子壁负荷归一化为１ＭＷ／ｍ２时，与常规Ｔｏｋａｍａｋ相比，在低环径比Ｔｏｋａｍａｋ堆第一壁及中心柱表面上中子壁负荷分布峰值并不比常规Ｔｏｋａｍａｋ堆第一壁上的峰值高，而且低于低环径比Ｔｏｋａｍａｋ堆整个第一壁上的平均值，而中心柱上的核热沉积峰值稍高于常规Ｔｏｋａｍａｋ堆第一壁上的核热沉积峰值，但对较高中子壁负荷情况，中心导体柱上的核热沉积和辐照损伤仍可能是比较严重和值得特别研究的问题。     

提高E^2PROM中NMOS管源漏穿通电压的实验研究

为了提高Ｅ＾２ＰＲＯＭ中Ｎ管源漏穿通电压，用实验的方法对制造工艺进行了研究。结果表明，高能量注入是提高ＶＰＴ的有效手段，但受到ｐｎ结击穿的限制，只适用于低区短沟Ｎ管；ＤＤＤ工艺大幅度高ＶＰＴ，但ｐｎ结击穿电压低于２０Ｖ，不能应用于高压ＭＯＳ管；采用适量的防穿通注入和适当增大沟道长度为最理想的工艺途径。     

专家系统在化工中的应用进展

本文综述了近年来专家系统在化工领域的应用状况，并指出今后的发展趋势。