4- and 13-GHz tuned amplifiers implemented in a 0.1-μm CMOStechnology on SOI, SOS, and bulk substrates

Four- and 13-GHz tuned amplifiers have been implemented in a partially scaled 0.1-1 μm CMOS technology on bulk, silicon-on-insulator (SOI), and silicon-on-sapphire (SOS) substrates. The 4-GHz bulk, SOI, and SOS amplifiers exhibit forward gains of 14, 11, and 12.5 dB and F_min's of 4.5 (bulk) and 3.5 db (SOS). The 13-GHz SOS and SOI amplifiers exhibit gains of 15 and 5.3 dB and F_unn's of 4.9 and 7.8 dB. The 4-GHz bulk amplifier has the highest resonant frequency among reported bulk CMOS amplifiers, while the 13-GHz SOS and SOI amplifiers are the first in a CMOS technology to have tuned frequencies greater than 10 GHz. These and other measurement results suggest that it may be possible to implement 20-GHz tuned amplifiers in a fully scaled 0.1-1 μm CMOS process     

Anomalous variations of OFF-State leakage current in poly-Si TFTunder static stress

Studies the anomalous variations of the OFF-state leakage current (I_OFF) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous I_OFF can be attributed to (1) I_OFF increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and (2) I_OFF decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (~(V_Gstress V_Dstress)/T _OX) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (~V_Dstress/L_CH)     

电流变流体的研究进展

电流变流体是近年来逐渐受人们重视的一种功能材料，本文介绍其国内、外发展过程及研究现状。     

高强度船板纵裂纹的成因及预防

针对高强度船板纵裂纹轧后退废过高的现状，分析原因并优化冶炼、连铸工艺及操作，有效地降低高强度船板的退废率。     

CMOS scaling into the nanometer regime

Starting with a brief review on 0.1-μm (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations. Among the issues discussed are: lithography, power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays. The last part of the paper discusses several alternative or unconventional device structures, including silicon-on-insulator (SOI), SiGe MOSFET's, low-temperature CMOS, and double-gate MOSFET's, which may lead to the outermost limits of silicon scaling     

双层辉光离子渗镀钽

介绍了一种新型离子渗镀钽的工艺方法。较好解决了渗镀钽时供给活性钽粒子的总是比方法工艺简单，操作方便，效率高。为充分利用和节约使用昂贵的钽探索了一条实用可行的途径。     

专家系统在化工中的应用进展

本文综述了近年来专家系统在化工领域的应用状况，并指出今后的发展趋势。     

Robust adaptive control of robotic manipulators without the regressor matrix

A new adaptive controller is presented here for rigid-body robotic manipulators. It is stable and robust with respect to a class of external disturbances. The robustness of the adaptive controller is established without the ‘slow-varying’ assumption and the computationally demanding regressor matrix. The control law consists of a non-adaptive PD control part and an adaptive control part. It uses two adaptive matrices to compensate two uniformly bounded coefficient matrices derived from the original dynamics. A α σ|q?|-modified adaptive law is designed to adjust the adaptive matrices. A Lyapunov-type stability analysis indicates that the closed-loop system is uniformly ultimately bounded. The tracking error and compensation error will eventually converge into a closed region, which can be made arbitrarily small by adjusting the controller parameters. Simulation results are included to demonstrate the performance of the proposed controller.     

功率GaAs MESFET的热阻测试

阐述了功率ＧａＡｓＭＥＳＦＥＴ器件热阻测试中温敏参数ＶＧＳＦ和测试电流Ｉｍ的选取，给出了１～５Ｗ器件典型温敏参数的温度测试系数Ｍ与测试电流Ｉｍ的关系。讨论了测试延迟时间ｔｍｄ对△ＶＧＳＦ测量值的影响和三种校正方法。