Enhancing Planar Inverted Perovskite Solar Cells with Innovative Dumbbell-Shaped HTMs: A Study of Hexabenzocoronene and Pyrene-BODIPY-Triarylamine Derivatives

Dumbbell-shaped systems based on PAHs-BODIPY-triarylamine hybrids TM-(01-04) are designed as novel and highly efficient hole-transporting materials for usage in planar inverted perovskite solar cells. BODIPY is employed as a bridge between the PAH units, and the effects of the conjugated π-system's covalent attachment and size are investigated. Fluorescence quenching, 3D fluorescence heat maps, and theoretical studies support energy transfer within the moieties. The systems are extremely resistant to UVC 254 nm germicidal light sources and present remarkable thermal stability at degradation temperatures exceeding 350 °C. Integrating these systems into perovskite solar cells results in outstanding power conversion efficiency (PCE), with TM-02-based devices exhibiting a PCE of 20.26%. The devices base on TM-01, TM-03, and TM-04 achieve PCE values of 16.98%, 17.58%, and 18.80%, respectively. The long-term stability of these devices is measured for 600 h, with initial efficiency retention between 94% and 86%. The TM-04-based device presents noticeable stability of 94%, better than the reference polymer PTAA with 91%. These findings highlight the exciting potential of dumbbell-shaped systems based on PAHs-BODIPY-triarylamine derivatives for next-generation photovoltaics.     

Energy yield prediction errors and uncertainties of different photovoltaic models

Mathematical, empirical, and electrical models have long been implemented and used to predict the energy yield of many photovoltaic (PV) technologies. The purpose of this paper is to compare the annual DC energy yield prediction errors of four models namely the single‐point efficiency, single‐point efficiency with temperature correction, the Photovoltaic for Utility‐Scale Applications (PVUSA), and the one‐diode model, against outdoor measurements for different grid‐connected PV systems in Cyprus over a 4‐year evaluation period. The different models showed a wide variation of prediction errors, demonstrating a strong dependence between model performance and the different technologies. In particular, it was clearly shown that the application of temperature loss correction based on the manufacturer's temperature coefficients of power at maximum power point assisted in improving the energy yield prediction significantly especially for the crystalline silicon (c‐Si) technologies. In most cases, the best agreement between the modeled results and outdoor‐measured annual DC energy yield for mono‐crystalline silicon (mono‐c‐Si) and multi‐crystalline silicon (multi‐c‐Si) technologies was obtained using the one‐diode model. The energy yield for the thin‐film technologies was more accurately predicted using the PVUSA model with the exception of the copper‐indium‐gallium‐diselenide (CIGS) technology, which was best predicted using the single‐point efficiency with temperature correction and one‐diode models, thus demonstrating similar physical properties to c‐Si technologies. The paper further quantifies the combined uncertainties associated with the predicted energy yield as a function of the input parameters for the single‐point efficiency, single‐point efficiency with temperature correction, and the PVUSA models. Copyright © 2011 John Wiley & Sons, Ltd.     

A visible-light and infrared video database for performance evaluation of video/image fusion methods

Multidimensional Systems and Signal Processing - In general, the fusion of visible-light and infrared images produces a composite representation where both data are pictured in a single image. The...     

Investigation of Alkali‐Ion (Li,Na, and K) Intercalation in KxVPO4F (x ∼ 0) Cathode

This work compares the intercalation of K, Na, and Li in K_xVPO₄F (x ～ 0). The K_xVPO₄F (x ～ 0) cathode delivers reversible capacities of ≈90–100 mAh g^?1 in K, Na, and Li cells, at an average voltage of ≈4.33 V for K, ≈3.98 V for Na, and ≈3.96 V for Li. This is so far the highest average voltage known for a K‐intercalation cathode. The lower voltage of Li insertion compared to Na is attributable to undercoordinated Li ions in the K_xVPO₄F (x ～ 0) framework. While the material shows high rate capability for all the alkali ions, Li migration in K_xVPO₄F (x ～ 0) is more difficult than with Na and K. This work suggests that a large cavity is not always good for insertion of alkali ions and cathode materials need to be suitably tailored to each intercalating ion species.     

Inverted Organic Solar Cells with Sol–Gel Processed High Work‐Function Vanadium Oxide Hole‐Extraction Layers

For large‐scale and high‐throughput production of organic solar cells (OSCs), liquid processing of the functional layers is desired. We demonstrate inverted bulk‐heterojunction organic solar cells (OSCs) with a sol–gel derived V₂O₅ hole‐extraction‐layer on top of the active organic layer. The V₂O₅ layers are prepared in ambient air using Vanadium(V)‐oxitriisopropoxide as precursor. Without any post‐annealing or plasma treatment, a high work function of the V₂O₅ layers is confirmed by both Kelvin probe analysis and ultraviolet photoelectron spectroscopy (UPS). Using UPS and inverse photoelectron spectroscopy (IPES), we show that the electronic structure of the solution processed V₂O₅ layers is similar to that of thermally evaporated V₂O₅ layers which have been exposed to ambient air. Optimization of the sol gel process leads to inverted OSCs with solution based V₂O₅ layers that show power conversion efficiencies similar to that of control devices with V₂O₅ layers prepared in high‐vacuum.     

Parlay‐based service provision in circuit‐ and packet‐switched telecommunications networks

The spectrum of potential value added services over Internet telephony is wide, but the current service provision solutions are inadequate or proprietary. The nature of Internet differs significantly from that of circuit switched network, however, VoIP architectures can capitalize service control architectures in the PSTN world. We describe such an architecture based on the intelligent network and the Parlay, employing distributed objects and mobile agents as enabling technologies. This architecture has been implemented in the PSTN and the Internet and it has provided a framework for service provisioning, augmenting the space of supported services. Copyright © 2004 John Wiley & Sons, Ltd.     

Effect of GaAs surface pretreatment on electrical properties of MBE-ZnSe/GaAs substrate interfaces

Interface properties of MBE-grown ZnSe/GaAs substrate systems formed on variously pretreated GaAs surfaces, which include standard chemically etched (5H₂SO₄:1H₂O₂: 1H₂O), (NH₄)₂S_x-, NH₄I-, and HF-pretreated surfaces, are investigated by capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements. A HF-pretreated and annealed ZnSe/p-GaAs sample showed marked reduction of interface state density, N_ss, with N_ss,_min below 4 x 10¹¹cm^-2 eV^-1 near E_c- E_FS= 1.0 eV. The value is about one order of magnitude smaller than that of the standard chemically etched interface, and comparable to (NH₄)₂S_x- pretreated interface. Nevertheless, C-V characteristics of ZnSe/nGaAs samples, which were measured for the first time, indicate that interface Fermi level, E_FS, is not completely unpinned due to the interface states located above the midgap. A consistent result was obtained by DLTS method in determining E_FS position. The influence of N_ss distribution on vertical current conduction is also analyzed. It is found that U-shaped interface states with N_ss(E) > 1 x 10¹³ cm^-2 eV^-1 above the midgap may cause an excess voltage drop larger than a few volts at the interface.