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51.
Terahertz (THz) imaging is expected to become powerful tools for non-destructive inspections. To ensure the practical use of THz non-destructive monitoring, versatile THz imagers with adjustable designs that can eliminate the complexities and the bulkiness of the device are urgently required. Herein, a self-aligned filtration process for a 2D, free-standing carbon nanotube film array and its application to a THz video camera patch are reported. The presented techniques enable a) to freely design the camera size, sensor array pattern, and suspended shape according to its applications, b) to cut the camera patch into desired shapes, and c) to attach them to the objects that are intended to be measured. Real-time, non-destructive monitoring of various infrastructures is demonstrated. These results indicate that it can function regardless of restrictions, such as the shapes and locations of the measurement samples, thus providing a strong possibility for use in future non-destructive sensor networks.  相似文献   
52.
MISFETs incorporating the InP/InGaAs buried channel showed a high peak mobility of 5500 cm2/V s. Spillover of the inversion carriers from the buried channel to the MIS interface on the InP barrier layer caused drastic mobility degradation as the carrier concentration was increased. The spillover was evidenced by observing a negative transconductance and a kink in split capacitance-voltage curves. Remote scattering by the trapped charges at the MIS interface also reduced the mobility when the InP barrier layer was as thin as 2 nm.  相似文献   
53.
We have experimentally demonstrated structural advantages due to rounded corners of rectangular-like cross-section of silicon nanowire (SiNW) field-effect transistors (FETs) on on-current (ION), inversion charge density normalized by a peripheral length of channel cross-section (Qinv) and effective carrier mobility (μeff). The ION was evaluated at the overdrive voltage (VOV) of 1.0 V, which is the difference between gate voltage (Vg) and the threshold voltage (Vth), and at the drain voltage of 1.0 V. The SiNW nFETs have revealed high ION of 1600 μA/μm of the channel width (wNW) of 19 nm and height (hNW) of 12 nm with the gate length (Lg) of 65 nm. We have separated the amount of on-current per wire at VOV = 1.0 V to a corner component and a flat surface component, and the contribution of the corners was nearly 60% of the total ION of the SiNW nFET with Lg of 65 nm. Higher Qinv at VOV = 1.0 V evaluated by advanced split-CV method was obtained with narrower SiNW FET, and it has been revealed the amount of inversion charge near corners occupied 50% of all the amount of inversion charge of the SiNW FET (wNW = 19 nm and hNW = 12 nm). We also obtained high μeff of the SiNW FETs compared with that of SOI planar nFETs. The μeff at the corners of SiNW FET has been calculated with the separated amount of inversion charge and drain conductance. Higher μeff around corners is obtained than the original μeff of the SiNW nFETs. The higher μeff and the large fractions of ION and Qinv around the corners indicate that the rounded corners of rectangular-like cross-sections play important roles on the enhancement of the electrical performance of the SiNW nFETs.  相似文献   
54.
How annealing influences the morphology of a highly regioregular poly(3‐hexylthiophene) (RR‐P3HT) film at the substrate interface as well as the lateral inhomogeneity in the electronic structure of the film are elucidated. Whereas previous studies have reported that high‐molecular‐weight (MW) RR‐P3HT films tend to show low crystallinity even after annealing, it is found that high‐MW RR‐P3HT does show high crystallinity after annealing at high temperature for a long time. Photoemission electron microscopy (PEEM), X‐ray photoemission spectroscopy, and ultraviolet photoemission spectroscopy results clearly resolve a considerable lateral inhomogeneity in the morphology of RR‐P3HT film, which results in a variation of the electronic structure depending on the local crystallinity. The PEEM results show how annealing facilitates crystal growth in a high‐MW RR‐P3HT film.  相似文献   
55.
A wavelength tunable optical filter is a beneficial optical component for dense wavelength-division-multiplexed systems. We report a high-performance polymeric arrayed-waveguide grating (AWG)-based tunable filter made of cross-linked silicone and operating around 1.55 μm. This filter exhibited a TE-TM polarization shift of <0.03, a crosstalk of <-35 dB, an insertion loss of <3 dB, and an 8.8-nm tuning range in the 25°C-75°C temperature region  相似文献   
56.
A new poly(p‐phenylenevinylene) (PPV) composite material has been developed by the incorporation of insoluble PPV polymer chains in the pores of monodisperse mesoporous silica spheres through an ion‐exchange and in situ polymerization method. The polymer distribution within the resultant colloidal particles is characterized by electron microscopy, energy dispersive X‐ray microanalysis, powder X‐ray diffraction, and nitrogen adsorption. It was found that the polymer was selectively incorporated into the mesopores of the silica host and was well distributed throughout the body of the particles. This confinement of the polymer influences the optical properties of the composite; these were examined by UV–vis and fluorescence spectroscopy and time‐correlated single‐photon counting. The results show a material that exhibits an extremely high fluorescence quantum yield (approaching 85%), and an improved resistance to oxidative photobleaching compared to PPV. These enhanced optical properties are further complemented by the overall processability of the colloidal material. In marked contrast to the insolubility of PPV, the material can be processed as a stable colloidal dispersion, and the individual composite spheres can be self‐assembled into opaline films using the vertical deposition method. The bandgap of the opal can be engineered to overlap with the emission band of the polymer, which has significant ramifications for lasing.  相似文献   
57.
The transmission performance of optical single-carrier (SC) transmission using frequency-domain equalisation (FDE) to counter polarisation mode dispersion (PMD) is evaluated. 25 Gbit/s coherent optical SC transmission using FDE (CO-SC-FDE) is demonstrated in the presence of a significant amount of differential group delay (DGD). The results show that CO-SC-FDE compensates for the influence of the 125 ps DGD; the OSNR penalty is 0.81 dB.  相似文献   
58.
Optical amplification characteristics for Er-doped silica core single-mode fiber amplifiers with different Er concentrations pumped by 1.48-μm-wavelength laser diodes are studied. Optical gain drastically depends on Er concentration, even when the Er concentration is less than 1000 p.p.m. In the case of the 40-mW incident pump power, the maximum net gain for the fiber containing 77 p.p.m. Er is higher than that for the fiber containing 970 p.p.m. Er by 11.4 dB  相似文献   
59.
A real-time system large-scale-integrated circuit (LSI) for digital video cassette recorder (DVCR) encoding/decoding and MPEG-2 decoding is implemented on a dual-issue RISC processor (DRISC) with dedicated hardware optimized for video-block processing. The DRISC achieves 972-MOPS software performance and can execute fixed-length data processing at the block level as well as processing at the macro-block level and above for the DVCR/MPEG-2. The dedicated hardware for variable-length coding/decoding can encode and decode codes for both the DVCR and the MPEG-2 by changing translation tables. The dedicated hardware for video-block loading can process video-block data transfers with half-pel operations. The LSI size is 7.7×7.2 mm2 in a 0.25-μm CMOS process  相似文献   
60.
Silk is a protein fiber used to weave fabrics and as a biomaterial in medical applications. Recently, genetically modified silks have been produced from transgenic silkworms. In the present study, transgenic silkworms for the mass production of three colors of fluorescent silks, (green, red, and orange) are generated using a vector originating from the fibroin H chain gene and a classical breeding method. The suitability of the recombinant silks for making fabrics is investigated by harvesting large amounts of the cocoons, obtained from rearing over 20 thousand silkworms. The application of low temperature and a weakly alkaline solution for cooking and reeling enables the production of silk fiber without loss of color. The maximum strain tolerated and Young's modulus of the fluorescent silks are similar to those of ordinary silk, although the maximum stress value of the recombinant silk is slightly lower than that of the control. Fabrics with fluorescent color are demonstrated using the recombinant silk, with the color persisting for over two years. The results indicate that large amounts of genetically modified silk can be made by transgenic silkworms, and the silk is applicable as functional silk fiber for making fabrics and for use in medical applications.  相似文献   
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