Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

Micromechanical characterisation of fibre/matrix interfaces

Theoretical analyses for the single fibre pull-out and push-out models under monotonic loading are given which are based on a shear-lag analysis in a fracture mechanics approach considering non-constant friction at the debonded interface as a result of fibre Poisson contraction (or expansion). The solutions allow the determination of typical fibre/matrix interfacial properties such as the interfacial fracture toughness, G_ic, the coefficient of friction, μ, and the residual clamping stress, q₀. Under cyclic loading the interfacial properties are expected to degrade as a result of repetitive abrasion, and a power law function is assumed between μ and the number of elapsed cycles, N. However, G_ic is assumed to be unaffected and a fracture mechanics based debond criterion is derived for the relationship between the external applied stress, the debond length and the reduced friction coefficient for both fibre pull-out and fibre push-out. In addition, the relative displacements between the free fibre end and the matrix top are obtained for cyclic fatigue when the fibre is loaded and unloaded. A relationship obtained for the protrusion (or intrusion) length in fibre pull-out (or push-out) experiments allows the severity of the interface frictional degradation to be evaluated and characterised. Similarities and differences in the frictional degradation behaviour between fibre pull-out and push-out are also identified.     

Microstructure-related fracture toughness and fatigue crack growth behaviour in toughened, anhydride-cured epoxy resins

Fracture toughness and fatigue crack propagation (FCP) of plain and modified anhydride-cured epoxy resin (EP) were studied at ambient temperature. Liquid carboxyl-terminated acrylonitrile-butadiene (CTBN) and silicon (SI) rubber dispersions were used as tougheners for the EP. The morphology of the modified EP was characterized by dynamic mechanical analysis (DMA) and by scanning electron microscopy (SEM). The fracture toughness, K_c, of the compositions decreased with increasing deformation rate. K_c of the EP was slightly improved by CTBN addition and practically unaffected by incorporation of the SI dispersion when tests were performed at low cross-head speed, v. Both modifiers improved K_c at high v, and also the resistance to FCP, by shifting the curves to higher stress intensity factor ranges, ΔK, by comparison with the plain EP. It was established that both fracture and fatigue performance rely on the compliance, J_R, at the rubbery plateau, and thus on the apparent molecular mass between crosslinks, M_c. The failure mechanisms were less dependent upon the loading mode (fracture, fatigue), but differed basically for the various modifiers. Rubber-induced cavitation and shear yielding of the EP were dominant for CTBN, whereas crack bifurcation and branching controlled the cracking in SI-modified EP. The simultaneous use of both modifiers resulted in a synergistic effect for both the fracture toughness at high deformation rate and the FCP behavior.     

混合结构楼房爆破拆除倒塌范围的确定

通过对混合结构楼房爆破倾倒过程特点的分析,提出了楼房在倾倒过程中的运动计算模型,并应用体积平衡原理,得到这类楼房爆破爆堆参数计算公式,用该公式计算的结果与实例中爆堆实测数据相比较,相对误差不超过11%.     

Non-contact methods of measuring moisture concentration in external layers of building partitions II—Monitoring of the water vapour condensation on porous surfaces

This paper present the results of the investigation into a potential application of laser radiation for the detection of phase transition processes occurring on the surface layers of porous materials. An attempt was made to discuss in the approximation equations, the relationships between coefficients of the reflected light, the temperature and humidity of the surrounding environment. Laser light reflected from the porous surface carries information about the roughness of the structure. The presence of water microdrop on the surface of the porous material, as a result of condensation and thus a phase transition, leads to the phase displacement of individual rays, which is represented by different images. Therefore, a comprehensive analysis of the reflected light parameters allows a dynamic study of the phase transition phenomena without mechanical intervention.     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique

This paper describes the fabrication of NMOS-transistors with a geometric gate length of down to 50 nm using conventional optical lithography and a modified sidewall-etchback process. Based on measurements the transistors are characterised and their device parameters are compared to simulations. Finally the procedures for further optimisation of the process will be explained.     

Effect of crack-growth mechanism on the prediction of fracture load of adhesive joints

This paper presents observations regarding the cracking behavior of tensile-loaded structural adhesive joints. Experiments showed that fracture occurred by the development and propagation of a damage zone, rather than a single, sharp crack, and that the presence of the adhesive spew fillet did not affect the fracture load of the adhesive joints studied. For joints bonded with the mineral-filled epoxy Cybond 4523GB (American Cyanamid), there was approximately 5 mm of subcritical crack propagation prior to final fracture. Fracture-load predictions based on the initial uncracked geometry made in previous papers were unaffected by this small change in geometry. For joints bonded with the rubber-toughened epoxy Permabond ESP 310, approximately 50 mm of subcritical crack propagation was observed. It was again found that predictions made in previous papers on the basis of the initial geometry gave a good estimate of the final fracture load even though this subcritical crack propagation significantly altered the geometry, and thus the applied energy release rates. The effect of shear deformations of the adherends was also investigated, and it was found that shear deformations could be neglected in engineering calculations for joints subject to remote tensile loading.     

Fuzzy consecutive-k-out-of-n:F system reliability

In this paper, we propose a new method to analyze fuzzy consecutive-k-out-of-n:F system reliability using fuzzy GERT. The triangular fuzzy numbers are used to fuzzify probabilities of the consecutive-k-out-of-n:F system and the interval arithmetic, α-cuts and an index of optimism λ are applied to compute fuzzy consecutive-k-out-of-n:F system reliability on fuzzy the GERT network. Futhermore, we can obtain all computation results by “MATHEMATICA” package.