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991.
Results of metal testing in impact tension–compression and indentation are analyzed. As the analysis of these data demonstrates, the strength of metals increases greatly with strain rates and at moderate indentation rates. At high indentation rates, a decrease in the specific energy (per unit volume of a displaced material) necessary for the formation of a conical cavity was observed. The account of the effects of viscosity, temperature increase upon plastic deformation and its localization can be used to explain the above phenomena.  相似文献   
992.
SiC-based field-effect gas sensors with catalytic platinum electrodes (Pt-MOSiC) have been subjected to a series of gas response measurements. Structural analysis of the Pt electrodes revealed that the gas sensitivity and the selectivity of Pt-MOSiC gas sensors depend on two major parameters: the porosity and the catalytic activity of the Pt electrodes. Pt-MOSiC gas sensors with thick, dense Pt electrodes only exhibit hydrogen sensitivity, whereas Pt-MOSiCs with thin porous gates exhibit a broad range of gas sensitivities similar to resistive metal-oxide gas sensors. A model is put forward that explains the nonhydrogen gas response of Pt-MOSiC devices and of conventional polycrystalline metal-oxide materials on a common basis.  相似文献   
993.
We observed zinc oxide structures formed in an oxygen-containing atmosphere as a result of oxidation of the surface of zinc droplets. The gas-phase oxidation leads to the formation of hollow ZnO whiskers on the metal surface, which grow due to the transport of zinc vapor through their channels. It was found that high partial pressures of zinc and atomic oxygen give rise to fractal structures, which appear in a cascade process involving the sequential formation of zinc oxide vapor, ZnO clusters, and cluster aggregates as a result of the cluster-cluster interaction. A deposit of ZnO synthesized on the cathode surface exhibits a columnar structure.  相似文献   
994.
This paper concerns the plasticity constitutive laws in small strain. In the thermodynamic approach developed here, the key concept is that of internal variables. The differential nature of plasticity law has been pointed out for a long time. If we unite the invariance condition of these laws in a state variable transformation, this involves, ultimately, that the natural mathematic frame of plasticity theory is Differential Geometry. The system state is defined as a point of a differentiable manifold. The state variable are the local coordinates of this point in a chart. The internal stresses are the components of a covariant vector of the cotangent bundle to internal state manifold and the elastic domain is a convex part of cotangent vector space. The plastic yield criteria such as von Mises condition define a Riemannian structure over the manifold. The metric element is identified with the internal dissipation element. Constitutive laws link the covariant derivatives of the thermodynamic stress with the state variable. Hardening modulus splits up in two parts, kinematic hardening and metric hardening. This last is defined by Christoffel connection coefficients. Applied to von Mises isotropic yield condition, the metric hardening is identified with isotropic hardening. The Baltov-Sawczuk model is also analysed. The use of appropriate polar coordinates simplifies significantly the computations. Generalization to a significant category of non-differentiable yield criteria, such as Tresca condition, is considered by introducting a metric tensor family. The adaptation of Drucker's postulate to the proposed model requires the introduction of parallel transport of the internal stress covector. Generally, this transport is different over distinctive paths joining two points. This fact expresses internal state manifold curvature. The Riemann-Christoffel tensor is computed for von Mises, Baltov-Sawczuk and Tresca models.  相似文献   
995.
Adaptive data partitioning (ADP) which reduces the execution time of parallel programs by reducing interprocessor communication for iterative parallel loops is discussed. It is shown that ADP can be integrated into a communication-reducing back end for existing parallelizing compilers or as part of a machine-specific partitioner for parallel programs. A multiprocessor model to analyze program execution factors that lead to interprocessor communication and a model for the iterative parallel loop to quantify communication patterns within a program are defined. A vector notation is chosen to quantify communication across a global data set. Communication parameters are computed by examining the indexes of array accesses and are adjusted to reflect the underlying system architecture by compensating for cache line sizes. These values are used to generate rectangular and hexagonal partitions that reduce interprocessor communication  相似文献   
996.
Translated from Atomnaya Énergiya, Vol. 66, No. 2, pp. 81–85, February, 1989.  相似文献   
997.
Wideband miniature G-shaped antenna for dual-band WLAN applications   总被引:1,自引:0,他引:1  
A wideband miniature G-shaped coplanar waveguide fed dual-band antenna for a wireless local area network (WLAN) is proposed. The proposed antenna has good radiation pattern and can provide two separate measured impedance bandwidths of 0.55 GHz (about 22.9% centred at 2.42 GHz) and 2.85 GHz (about 50.9% centred at 5.60 GHz), so that it easily covers the required bandwidths for WLAN operation. This design results in a small antenna size of 22 times 18.5 mm with the ground plane regarded as part of the antenna structure.  相似文献   
998.
A model of an induction motor with an asymmetric stator winding is developed; it may be represented as two phases connected in parallel or in series and displaced is space by some angle.  相似文献   
999.
Excessive power supply noise during test can cause overkill. This article discusses two models for supply noise in delay testing and their application to test compaction. The proposed noise models avoid complicated power network analysis, making them much faster than existing power noise analysis tools. can cause performance degradation and  相似文献   
1000.
An analytical current-voltage (I-V) model for planar-doped HEMTs is developed. This compact model covers the complete range of I-V characteristics, including the current saturation region and parasitic conduction in the electron-supplying layer. Analytical expressions for the small-signal parameters and current-gain cutoff frequency are derived from the I-V model. Modeling results for a 0.1-μm-gate planar-doped AlInAs-GaInAs HEMT show excellent agreement with measured characteristics. Threshold voltages and parasitic conduction in planar-doped and uniformly doped HEMTs are also compared and discussed  相似文献   
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