直接斜率波前复原算法的控制效果分析

建立自适应光学系统功率谱抑制函数的概念，分析了采用直接斜率波前复原算法的自适应当光学系统的控制效果，理论分析与６１单元自适应光学系统上的实验结果表明，直接斜率波前复原算法将导致控制效果下降。     

Endothelium-dependent effect of perindopril and enalaprilat in rat thoracic aorta

AIM: To study the effect of the angiotensin-converting enzyme (ACE) inhibitors perindopril (Per) and enalaprilat (Ena) on the reactivity of the endothelium in normal rats. METHODS: Male rats were treated intragastrically with Per (2 mg.kg-1.d-1) or placebo (n = 18) for 6 wk. Aorta was isolated for experiment. Another set of isolated aortic rings with and without endothelium were incubated with Ena (0.1 mumol.L-1) for 30 min. Responses to acetylcholine, serotonin, phenylephrine, sodium nitroprusside (SN), and nitroglycerin (Nit) were observed. RESULTS: Endothelium-dependent relaxation to acetylcholine was augmented in aortic rings from rats treated with Per in comparison with control. The IC50 value (95% confidence limits) decreased from 3.8 (0.56-26.1) mumol.L-1 (control group) to 0.98 (0.28-3.41) mumol.L-1 (Per-treated group). The maximal relaxation was augmented from 62 +/- 9% to 78 +/- 10% (P < 0.01). However, the responses to the endothelium-independent vasodilators, SN and Nit, were similar. Serotonin- and phenylephrine-induced contractions were decreased, which were influenced by basal release of endothelium-derived relaxing factor (EDRF). EC50 values was 6.1 (2.6-14.4) nmol.L-1 vs 8.3 (3.6-18.8) nmol.L-1 in comparison with control group and Per-treated group. The maximal contraction was decreased from 2.42 +/- 0.29 g (control group) to 1.96 +/- 0.25 g (treated group) (P < 0.01). Similar results were found in incubation with Ena. CONCLUSION: Ena and Per enhanced the basic release of EDRF from vascular endothelium.     

北京谱仪Ⅱ（BESⅡ）顶点探测器数据获取系统

北京谱仪（ＢＥＳⅡ）顶点探测器数据获取系统是北京谱仪数据获取系统的一部分，该子系统电子学采用快总线标准，本文描述了该系统的硬件结构和软件系统，软件包括快总线系统的微码软件和上层控制软件，该系统的死时间为１．５ｎｓ，对ＢＥＳⅡ系统总死时间的贡献小于０．５ｍｓ。     

两个同心施转圆柱间的Taylor问题

本文推导了在修正双极坐标系下的Ｎａｖｉｅｒ－Ｓｔｏｋｅｓ方程和讨论了它的基本流的扰动解     

Dynamic fields generated by rapid crack growth

Stresses and strains near a rapidly propagating crack tip are affected by the mass density of the material. This paper starts with a brief summary of analytical results for near-tip dynamic fields as predicted by linear elastic fracture mechanics. Next, exact expressions are derived for dynamic crack-line strains, for mode-III crack propagation in a nonlinear elastic material and in an elastic perfectly-plastic material. These expressions are valid on the crack line from the moving crack tip to the moving boundary with the region of linearly elastic deformation. For steady-state crack growth, a critical strain criterion is used to compute the relation between external load and crack tip speed. The required external load increases with crack-tip speed.     

High-breakdown-voltage AlSbAs/InAs n-channel field-effecttransistors

InAs channel field-effect transistors of 1-μm gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs     

一种可用于可调谐环行Ti：Al_2O_3激光器的宽带单向器

本文介绍一种宽带单向器的原理及设计。选用ＴＧＧ作磁旋光介质，旋光石英晶片作补偿片，所设计的色散补偿型宽带单向器预计可在７００～１０００ｎｍ波长范围内实现环行激光腔中的单向行波运行；将其应用在可调谐环行Ｔｉ：Ａｌ２Ｏ３激光器中，获得了良好的实验结果。